fiAAMOSPEC NPN SILICON POWER TRANSISTORS The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES *Off-Line Power Supplies *Converter Circuits *Pulse Width Modulated Regulators Specification Feature- High Voltage Capability Fast Switching Speeds Low Saturation Voltage MAXIMUM RATINGS NPN 2N6676 2N6677 2N6678 15 AMPERE NPN SILICON POWER TRANSISTORS 300-400 VOLTS 175 WATTS Characteristic Symbol | 2N6676 | 2N6677 | 2N6678 | Unit Collector-Emitter Voitage Voev 450 550 650 Vv Collector-Emitter Voltage Voex 350 400 450 Vv Collector-Emitter Voltage Veeo 300 350 400 Vv Emitter-Base Voltage Vero 8.0 Vv Collector Current - Continuous le 15 A - Peak low 20 Base Current-Peak lp 5.0 A Total Power Dissipation @T,= 25C P, 175 w Derate above 25C 1.0 wfc Operating and Storage Junction Ty :Tst C Temperature Range -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max UNIT Thermal Resistance Junction to Case| Rojc 1.0 C Py , POWER DISSIPATIONWATTS) o BasBkRaaA o 2 58 7 100 To , TEMPERATURE(*C) FIGURE -1 POWER DERATING 125 150 175 200 PIN 1.BASE 2. EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 39.96 B 19.28 22.23 c 796 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 | 16.64 17D J 3.88 436 K 10.67 11.182N6676 , 2N6677, 2N6678 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) 2N6676 Vego(sus) 300 V (1,= 200 mA, I,= 0) 2N6677 350 2N6678 400 Collector Cutoff Current loey mA (Veg= Rated Vegy, Vaciom= -1-5V ) 0.1 (Vee= Rated Vegy, Vegiom =-1-5V, T= 100C ) 1.0 Emitter Cutoff Current leBo mA (Veg= 8.0 V, 1,= 0) 2.0 ON CHARACTERISTICS (1) DC Current Gain hFE ( I, =15 A, Veg = 3.0 V) 8.0 Collector-Emitter Saturation Voltage VocE{sat) Vv (I, =15A, I,= 3.0A) 1.5 Base-Emitter Saturation Voltage Vese(sat) V (1, =15 A, Ip= 3.0A) 1.5 DYNAMIC CHARACTERISTICS Current - Gain - Bandwidth Product (2) F, MHz (Ig=1.0 A, Vog= 10 V, f = 5.0 MHz ) 3.0 Output Capacitance Cop pF (Ig= 1.0 A, Veg= 10 V, f = 0.1 MHZ ) 500 SWITCHING CHARACTERISTICS Delay Time Vee 200V,1.= 15A ty 0.2 us : las= lao= 3A,tp= 20us 6 Rise Time Duty Cycle < 2% t, 0. us Storage Time Ves= 6V,R,= 13.52 t. 2.5 us -_ 0, Fall Time Te= 25C ty 0.6 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Hye | F sont2N6676, 2N6677, 2N6678 NPN NNT ES Ea Ic , COLLECTOR CURRENT (Amp) ie, COLLECTOR CURRENT(AMP) FIG-2 FORWARD BAIAS SAFE OPERATING AREA 20 10 10us Tox28C 5.0 2.0 1.0 de * : Toxah C s 05 T,=100C 02 Ot: - ~ Bondng Wire Limit Second Breakdown 0,05} Thermally Limited at T,=26C (Single Puse) 2N6676 0.02 2N6677 , 2N6678 0.01 5 7 10 20 (30 50 70 100 200 300 400 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) FIG-3 REVERSE BIAS SAFE OPERATING AREA Vee(ony1.0 V to 6.0 V Tes100C 0 100 200 300 400 500 Vee, COLLECTOR-EMITTERVOLTAGE(VOLTS) [FORWARD BAIS There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ie-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-2 is base on T.=25 C;Tupig is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided Tc >25C , At high case temperatures,tnermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BAIS _ | For inductive loads, high voltage and high current must be sustained simuttaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased Under these conditions the collector voltage must be held to a safe level at or below a specfic value of collector current.This can be accomplished by several mean such as active clamping, RC snubbing, load line shaping, etc. the safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. FIG-3 gives the RBSOA characteristics.