X04 Series 4A SCRS SENSITIVE MAIN FEATURES: Symbol Value Unit IT(RMS) 4 A V DRM/VRRM 600 and 800 V IGT 50 to 200 A DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies... TO202-3 (X04xxF) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current Value Unit Tl = 60C 4 A Tamb = 25C 1.35 Tl = 60C 2.5 Tamb = 25C 0.9 tp = 8.3 ms 33 A A Tj = 25C tp = 10 ms 30 I t Value for fusing tp = 10 ms Tj = 25C 4.5 A 2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr 100ns F = 60 Hz Tj = 125C 50 A/s IGM Peak gate current tp = 20 s Tj = 125C 1.2 A Tj = 125C 0.2 W - 40 to + 150 - 40 to + 125 C It PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range September 2000 - Ed: 3 1/5 X04 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions X04xx 02 IGT RL = 140 VD = 12 V VGT VGD VD = VDRM VRG IRG = 10 A RL = 3.3 k RGK = 1 k Tj = 125C Unit 05 MIN. _ 20 MAX. 200 50 A MAX. 0.8 V MIN. 0.1 V MIN. 8 V IH IT = 50mA RGK = 1k MAX. 5 mA IL IG = 1mA RGK = 1k MIN. 6 mA dV/dt VD = 67% VDRM VTM ITM = 8 A Vt0 Rd IDRM IRRM RGK = 1k Tj = 110C MIN. Tj = 25C MAX. 1.8 V Threshold voltage Tj = 125C MAX. 0.95 V Dynamic resistance Tj = 125C MAX. 100 m Tj = 25C MAX. 5 A 1 mA tp = 380 s VDRM = VRRM RGK = 1 k 10 Tj = 125C 15 V/s THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to leads (DC) Rth(j-a) Junction to ambient (DC) Value Unit 15 C/W 100 PRODUCT SELECTOR Voltage Part Number 600 V X0402MF X X0402NF X0405MF X0405NF 2/5 Sensitivity Package 200 A TO202-3 200 A TO202-3 50 A TO202-3 50 A TO202-3 800 V X X X X04 Series ORDERING INFORMATION OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode X04xxyF 1AA2 X04xxyF 0.8 g 250 Bulk X04xxyF 0AA2 X04xxyF 0.8 g 50 Tube Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. 3/5 X04 Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It. 4/5 X04 Series Fig. 10: On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. Millimeters Min. A C D F H J M N N1 O P Typ. Inches Max. Min. Typ. 10.1 7.3 10.5 Max. 0.398 0.287 0.413 1.5 0.51 1.5 4.5 0.059 0.020 0.059 0.177 5.3 2.54 0.209 0.100 1.4 0.7 0.055 0.028 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 5/5