Feb.1999
¡VDSS ................................................................................800V
¡rDS (ON) (MAX) ..............................................................12.3Ω
¡ID ............................................................................................1A
FS1VS-16A
800
±30
1
3
65
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
PD
Tch
Tstg—
OUTLINE DRAWING Dimensions in mm
TO-220S
MITSUBISHI Nch POWER MOSFET
FS1VS-16A
HIGH-SPEED SWITCHING USE
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
10.5MAX.
1.3
1.5MAX.
qwe
r4.5
0
+0.3
–0
3.0
+0.3
–0.5
150.8
8.6 ± 0.3
9.8 ± 0.5 1.5MAX.
(1.5)
0.5
4.5
2.6 ± 0.4
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
Feb.1999
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
800
±30
—
—
2
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
9.43
4.72
1.0
270
26
4
9
12
35
30
1.0
—
—
—
±10
1
4
12.3
6.15
—
—
—
—
—
—
—
—
1.5
1.92
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 800V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VGS = 10V
ID = 0.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 0.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 0.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS1VS-16A
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
0
0.4
0.8
1.2
1.6
2.0
0 1020304050
PD = 65W
VGS = 20V
TC = 25°C
Pulse Test
10V 5V
4V
4.5V
0
20
40
60
80
100
0 20050 100 150
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
VGS = 20V
TC = 25°C
Pulse Test 10V
5V
4.5V
4V
10–2
10–1
2
3
5
7
100
2
3
5
7
101
2
3
5
7
101
357 2 10
2
357 2 10
3
357 32
TC = 25°C
Single Pulse
10ms
100ms
1ms
DC
tw = 100ms
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS1VS-16A
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
0 4 8 12 16 20
I
D
= 2A
T
C
= 25°C
Pulse Test
1A
0.5A
0
4
8
12
16
20
10
–2
210
–1
357 2 10
0
357 2 10
1
357
V
GS
= 10V
T
C
= 25°C
Pulse Test
20V
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
–1
10
0
23 57 10
1
23 57
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
210
0
357 2 10
1
357 2 10
2
357 2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
23457 10
1
23457
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS1VS-16A
HIGH-SPEED SWITCHING USE
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
Single Pulse
0.5
0.2
0.1
0.05
0.02
0.01
D = 1.0
P
DM
tw
D
=
T
tw
T
0
4
8
12
16
20
0 4 8 12 16 20
V
DS
= 250V
400V
600V
Tch = 25°C
I
D
= 1A
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50 0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
0
1
2
3
4
5
0 0.8 1.6 2.4 3.2 4.0
T
C
= 25°C
75°C
125°C
V
GS
= 0V
Pulse Test
