APTM100DDA35T3G Dual Boost chopper MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR2 7 23 8 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 1000 22 17 88 30 420 390 25 50 3000 Unit V A V m W A July, 2006 22 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100DDA35T3G- Rev 1 CR1 VDSS = 1000V RDSon = 350m typ @ Tj = 25C ID = 22A @ Tc = 25C APTM100DDA35T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Test Conditions T j = 25C VGS = 0V,VDS = 800V T j = 125C VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = 30V, VDS = 0V Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 350 Min VGS = 10V VBus = 500V ID = 22A Test Conditions www.microsemi.com Max Unit A m V nA nF nC 18 12 40 900 J 623 1423 J 779 Min 1000 Tj = 25C Tj = 125C Tc = 70C ns 155 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 22A, R G = 5 IF = 30A VR = 667V di/dt=200A/s Unit 122 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 22A, R G = 5 IF = 30A IF = 60A IF = 30A Typ 5.2 0.88 0.16 186 Max 100 500 420 5 100 24 Inductive switching @ 125C VGS = 15V VBus = 670V ID = 22A R G = 5 VR=1000V Typ 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Min VGS = 0V,VDS = 1000V Typ Max 250 500 Tj = 125C 30 1.9 2.2 1.7 Tj = 25C 290 Tj = 125C 390 Tj = 25C 670 Tj = 125C 2350 Unit V A A 2.3 V July, 2006 IDSS Characteristic ns nC 2-6 APTM100DDA35T3G- Rev 1 Symbol APTM100DDA35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.32 1.2 Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM100DDA35T3G- Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTM100DDA35T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 60 7V 40 6.5V 30 6V 20 5.5V 10 VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle 70 ID, Drain Current (A) 60 50 40 30 T J=25C 20 10 5V 0 0 5 10 15 20 25 T J=125C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS=10V V GS=20V 0.9 20 15 10 0.8 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance 1.2 1 3 25 Normalized to VGS=10V @ 11A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS , Drain to Source Voltage (V) 1.4 TJ=-55C 0 4-6 APTM100DDA35T3G- Rev 1 I D, Drain Current (A) VGS=15, 10&8V 50 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=11A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100s limited by RDSon 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 1ms 10 Single pulse TJ =150C TC=25C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=22A TJ=25C 12 VDS=200V VDS=500V 10 V DS =800V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) www.microsemi.com 5-6 APTM100DDA35T3G- Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DDA35T3G APTM100DDA35T3G Delay Times vs Current Rise and Fall times vs Current 80 180 t d(off) VDS=670V RG=5 TJ=125C L=100H 70 140 60 120 tr and tf (ns) td(on) and td(off) (ns) 160 V DS=670V RG=5 T J=125C L=100H 100 80 60 40 50 40 tr 30 20 td(on) 10 20 0 0 0 10 20 30 40 50 0 10 ID, Drain Current (A) 50 4 Eon V DS=670V RG=5 T J=125C L=100H 2 1.5 Switching Energy (mJ) Switching Energy (mJ) 20 30 40 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 E off 1 0.5 VDS=670V ID=22A TJ=125C L=100H 3.5 3 2.5 Eoff 2 Eon 1.5 Eoff 1 0.5 0 0 0 10 20 30 40 50 0 ID, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 225 200 175 150 125 100 75 I DR, Reverse Drain Current (A) Frequency (kHz) tf ZVS ZCS VDS=670V D=50% RG=5 T J=125C T C=75C 50 25 0 8 10 13 15 18 ID, Drain Current (A) 20 T J=150C T J=25C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM100DDA35T3G- Rev 1 July, 2006 5 Hard switching 100