APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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com 1
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6
1413
Q1 Q2
23 8
22 7
CR 1 CR 2
3029 32
426
3
27
31
16
15 R1
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Ma
x
ratings Unit
VDSS Drain - Source Breakdown Voltage 1000 V
Tc = 25°C 22
ID Continuous Drain Current Tc = 80°C 17
IDM Pulsed Drain current 88
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 420 mΩ
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
D
ual Boost choppe
r
MOSFET Power Module
APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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com 2
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V, VDS = 1000V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 500
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 11A 350 420
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 5.2
Coss Output Capacitance 0.88
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.16
nF
Qg Total gate Charge 186
Qgs Gate – Source Charge 24
Qgd Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A 122
nC
Td(on) Tur n-on Delay Ti me 18
Tr Rise Time 12
Td(off) Turn-off Delay Time 155
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5Ω 40
ns
Eon Turn-on Switching Energy 900
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 670V
ID = 22A, RG = 5Ω 623
µJ
Eon Turn-on Switching Energy 1423
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 670V
ID = 22A, RG = 5Ω 779
µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1000 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1000V Tj = 125°C 500 µA
IF DC Forward Current Tc = 70°C 30 A
IF = 30A 1.9 2.3
IF = 60A 2.2 VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.7
V
Tj = 25°C 290
trr Reverse Recovery Time
Tj = 125°C 390
ns
Tj = 25°C 670
Qrr Reverse Recovery Charge
IF = 30A
VR = 667V
di/dt=200A/µs
Tj = 125°C 2350
nC
APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.32
RthJC Junction to Case Thermal Resistance Diode 1.2
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
10
20
30
40
50
60
0 5 10 15 20 25 30
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15, 10&8V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
0123456789
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 102030405060
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 11A
0
5
10
15
20
25
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=11A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS =800V
0
2
4
6
8
10
12
14
0 50 100 150 200 250
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=22A
TJ=25°C
APTM100DDA35T3G
APTM100DDA35T3G– Rev 1 July, 2006
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
0 1020304050
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
80
0 1020304050
ID, Drain Current (A)
tr and tf (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0 1020304050
ID, Drain Current (A)
Switching Energy (mJ)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
0 5 10 15 20 25 30 35
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=670V
ID=22A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
250
5 8 10 13 15 18 20
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
M icrose mi rese rve s the rig ht to c hange , witho ut notice, the s pecificatio ns and info rma tio n co nta ine d he re in
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