1
RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Features
zz
zz
zSingle 12V Bias Supply
zz
zz
zDrives All Low Cost N-MOSFET s
zz
zz
zHigh-Gain Voltage Model PWM Control
zz
zz
z300kHz/600kHz Fixed Frequency Oscillator
zz
zz
zFa st Tra n sient Re sponse :
` High-Speed GM Amplifier
` Full 0 to 100% Duty Ratio
` External Compensation in the Control Loop
zz
zz
zInternal Soft-Start
zz
zz
zAdaptive Non-Overlapping Gate Driver
zz
zz
zOver Current Fault Monitor on MOSFET, No
Current Sense Resistor Required
zz
zz
zRoHS Compliant and 100% Lead (Pb)-Free
12V Synchronous Buck PWM DC/DC Controller
General Description
The RT8101/A are DC/DC synchronous buck PWM
controllers with embedded driver support up to 12V + 12V
boot-strapped voltage for high efficiency power driving. The
parts are with full functions of voltage regulation, power
monitoring and protection into a single small footprint
pa ckages SOP-8 a nd SOP-8 (Exposed Pad).
The RT8101/A apply a high-gain voltage mode PWM control
for si mple application design. An intern al 0.8V reference
allows the output voltage to be precisely regulated to low
voltage requirement. The parts are proposed with two type
including RT8101 and RT8101A with fixed operating
frequency of 300kHz and 600kHz respectively . Ba sed on
the features that R T8101/A offered, the parts provide an
optimum solution between efficiency , total B.O.M. count,
and cost.
Ordering Information
Applications
zGra phic Card
zMotherboard, Desktop Servers
zIA Equipments
zTelecomm Equipments
zHigh Power DC/DC Regulators
Pin Configurations
(TOP VIEW)
SOP-8
SOP-8 (Exposed Pad)
Note :
Richtek products are :
` RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
` Suitable for use in SnPb or Pb-free soldering processes. BOOT
UGATE
GND
LGATE
PHASE
COMP
VCC
FB
GND
2
3
45
6
7
8
9
PHASE
BOOT
UGATE
LGATE
GND VCC
COMP
FB
2
3
45
8
7
6
Package Typ e
S : SOP-8
SP : SOP-8 (Exposed Pad-Option 2)
RT8101/A
600kHz
300kHz
Lead Plating System
P : Pb Free
G : Green (Halogen Free and Pb Free)
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
Functional Pin Description
BOOT (Pin 1)
Bootstrap supply for the upper gate driver. Connect the
bootstrap capacitor between BOOT pin and the PHASE
pin. The bootstrap capacitor provides the charge to turn
on the upper MOSFET.
UGA TE (Pin 2)
Upper gate driver output. Connect to gate of the high-
side power N-Channel MOSFET. This pin is monitored by
the adaptive shoot-through protection circuitry to
determine when the upper MOSFET is turned off.
GND (Pin 3)
Signal ground for the IC.
LGA TE (Pin 4)
Lower gate driver output. Connect to the gate of the low-
side power N-Channel MOSFET. This pin is monitored by
the ada ptive shoot-through protection circuitry to determine
when the lower MOSFET is turned off.
VCC (Pin 5)
Connect this pin to a well-decoupled 12V bias supply. It
is also the positive supply for the lower gate driver , LGATE.
FB (Pin 6)
Buck converter feedback voltage. This pin is the inverting
input of the error a mplifier . FB senses the switcher output
through an external resistor divider network.
COMP (Pin 7)
Buck converter external compensation. This pin is used
to compensate the control loop of the buck converter .
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET a nd
the drain of the lower MOSFET. This pin is monitored by
the adaptive shoot-through protection circuitry to
determine when the upper MOSFET is turned off.
Exposed Pad (9)
The exposed pad must be soldered to a large PCB and
connected to GND f or maximum power dissi pation.
Typical Application Circuit
12V
V
OUT
Q1
Q2
CIN
RT8101/A
V
IN
(+3.3V/+5V/+12V)
PSC
BOOT
VCC PHASE
UGATE
LGATEFB
GND
1
5
6
3
2
8
4
C
OUT
L
OUT
COMP
RBOOT
RUGATE
R
C
7
3
RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Function Block Diagram
Driver
Logic
GND
LGATE
BOOT
UGATE
PHASE
OC
PH_M
Soft-Start
&
Fault Logic
Oscillator
Power On
Reset (POR)
VCC
Bias
Voltage
Reference
1.5V
5VDD
EA
UV
+
-
+
-
+
-
+PWM
+
-
+
+
-
POR
INHIBIT
SS
SSE
5V
Regulator
FB
+
-
0.8V
0.4V
0.8V
COMP
Enable
0.4V
30uA
21.6k
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
Electrical Characteristics
(VCC = 12V, TA = 25°C, unless otherwise specified)
To be continued
Absolute Maximum Ratings (Note 1)
zSupply Voltage, VCC ----------------------------------------------------------------------------------16V
zPHASE to GN D
DC---------------------------------------------------------------------------------------------------------−5V to 15V
< 200ns--------------------------------------------------------------------------------------------------−10V to 30V
zBOOT to PHASE --------------------------------------------------------------------------------------15V
zUGATE ---------------------------------------------------------------------------------------------------(VPHASE − 0.3V) to (VBOOT + 0.3V)
zLGATE ---------------------------------------------------------------------------------------------------(GND − 0.3V) to (VCC + 0.3V)
< 200ns--------------------------------------------------------------------------------------------------−1.5V to 13.5V
zInput, Output or I/O Voltage-------------------------------------------------------------------------GND − 0.3V to 7V
zPower Dissipation, PD @ TA = 25°C (Note 2)
SOP-8----------------------------------------------------------------------------------------------------0.83W
SOP-8 (Exposed Pad) -------------------------------------------------------------------------------1.33W
zPackage Thermal Resistance
SOP-8, θJA ----------------------------------------------------------------------------------------------120°C/W
SOP-8 (Exposed Pad), θJA --------------------------------------------------------------------------75°C/W
zJunction T emperature---------------------------------------------------------------------------------150°C
zLead T emperature (Soldering, 10 sec.)-----------------------------------------------------------2 60°C
zStorage T emperature Range ------------------------------------------------------------------------−65°C to 150°C
zESD Susceptibility (Note 3)
HBM (Human Body Mode) --------------------------------------------------------------------------2kV
MM (Ma chine Mode) ----------------------------------------------------------------------------------200V
Recommended Operating Conditions (Note 4)
zSupply Voltage, VCC ----------------------------------------------------------------------------------12V ± 10%
zJunction T emperature Range------------------------------------------------------------------------−40°C to 125°C
zAmbient T emperature Range------------------------------------------------------------------------−40°C to 85°C
Parameter Symbol Test Conditions Min Typ Max Unit
Supply Input
S upply Voltage VCC UGATE and LGATE Open 10.8 12 13.2 V
Supply Current ICC V
CC = 12V -- 3 -- mA
Power-On Reset
POR Threshold VCCRTH 8.8 9.6 10.4 V
POR Hysteresis VCCHYS -- 0.8 1.6 V
Oscillator VCC = 12V, RT8101 250 300 350
Fr ee Running F r equency fOSC VCC = 12V , RT81 01A 5 00 600 70 0 kHz
Ra mp Amplitude ΔVOSC V
CC = 12V -- 1.5 -- VP-P
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RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Parameter Symbol Test Conditions Min Typ Max Unit
Reference Voltage
PWM E rror Amplifier Reference VREF 0.792 0.8 0.808 V
E rror Amplifier
Open Loop DC Gain AO -- 88 -- dB
G ai n- Bandwi dt h Pr oduct GB W - - 15 - - M H z
Sl ew Rate SR -- 6 -- V/μs
PWM Controller Gate Drivers (VCC = 12V)
Upper Ga te So u rce IUGATE VBOOT − VPHASE = 12V,
VBOOT − VUGATE = 6V -- 300 -- mA
Upper Ga te So u rce RUGATE VBOOT − VPHASE = 12V,
VBOOT − VUGATE = 1V -- 7 10 Ω
Upper Ga te Sin k RUGATE VBOOT − VPHASE = 12V,
VUGATE − VPHASE = 1V -- 4 8 Ω
Lower Gate So u rce ILGATE V
CC = 12V, VLGATE = 6V - - 500 - - m A
Lower Gate So u rce RLGATE V
CC − VLGATE = 1V - - 4 6 Ω
Lower Gate Sin k RLGATE V
LGATE = 1V - - 2 4 Ω
Protection
U nder V oltage Pr ot ection Measur ing V FB 0.3 0.4 0.5 V
Over Current Threshold VOC Measuring VPHASE −210 −250 −290 mV
Soft-Start In te rv a l T SS COM P pi n re lea s ed to 90% VOUT 2 3.5 5 ms
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective 4-layers thermal conductivity test board of
JEDEC 51-7 thermal measurement standard.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
Typical Operating Characteristics
Efficiency vs. Output Current
0.75
0.80
0.85
0.90
0.95
1.00
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25
Output Current (A)
Efficien cy (%)
VCC = 12V
VIN = 5V
RT8101
RT8101A
100
95
90
85
80
75
Output Voltage vs. Output Current
2.45
2.46
2.47
2.48
2.49
2.50
2.51
2.52
2.53
2.54
2.55
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25
Output Current (A)
Output Voltage (V)
VIN = 12V
VIN = 5V
RT8101A
Output Voltage vs. Output Current
2.45
2.46
2.47
2.48
2.49
2.50
2.51
2.52
2.53
2.54
2.55
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25
Output Current (A)
Output Voltage (V)
VIN = 12V
VIN = 5V
RT8101
RT8101
Frequency vs. Temperature
280
285
290
295
300
305
310
315
320
325
-40 -10 20 50 80 110 140
Tempera ture (°C)
Fr equency (kHz) 1
Frequency vs. Temperature
520
540
560
580
600
620
640
-40 -10 20 50 80 110 140
Tempera tu re (°C )
Fr equency (kHz) 1
RT8101A
Reference Voltage vs. Temperature
0.7917
0.7938
0.7959
0.7980
0.8001
0.8022
0.8043
0.8064
-50-25 0 255075100125
Tempera tu re (°C )
Refer ence V oltage (V)
VCC = 12V
VIN = 5V
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RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Dead Time (Falling)
Time (25ns/Div)
UGATE
LGATE
PHASE
VCC = 12V
VIN = 12V
IOUT = 25A
(5V/Div)
Dead Time (Rising)
Time (50ns/Div)
UGATE
LGATE
PHASE
VCC = 12V
VIN = 12V
IOUT = 25A
(5V/Div)
Power On from VIN
Time (5ms/Div)
UGATE
(20V/Div)
VOUT
(2V/Div)
VIN
(10V/Div)
VCC
(10V/Div)
Power On from VIN
Time (5ms/Div)
UGATE
(20V/Div)
VOUT
(2V/Div)
VIN
(10V/Div)
VCC
(10V/Div)
Power On from VCC
Time (5ms/Div)
UGATE
(20V/Div)
VOUT
(2V/Div)
VIN
(10V/Div)
VCC
(10V/Div)
Power Off from VCC
Time (5ms/Div)
UGATE
(20V/Div)
VOUT
(2V/Div)
VIN
(10V/Div)
VCC
(10V/Div)
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
Transient Response (Rising)
Time (5μs/Div)
VOUT
(100mV/Div)
IOUT
(10A/Div)
UGATE
(20V/Div)
RT8101, VCC = VIN = 12V, I OUT = 0A to 15A,
f = 1/20ms, SR = 2.5A/μs, L = 2.2μH, C = 2000μF
Transient Response (Rising)
Time (5μs/Div)
VOUT
(100mV/Div)
IOUT
(10A/Div)
UGATE
(20V/Div)
RT8101A, VCC = VIN = 12V, IOUT = 0A to 15A,
f = 1/20ms, SR = 2.5A/μs, L = 2.2μH, C = 2000μF
Transient Response (Falling)
Time (5μs/Div)
RT8101A, VCC = VIN = 12V, I OUT = 15A to 0A,
f = 1/20ms, SR = 2.5A/μs, L = 2.2μH, C = 2000μF
VOUT
(100mV/Div)
IOUT
(10A/Div)
UGATE
(20V/Div)
Transient Response (Falling)
Time (5μs/Div)
RT8101, VCC = VIN = 12V, IOUT = 15A to 0A,
f = 1/20ms, SR = 2.5A/μs, L = 2.2μH, C = 2000μF
VOUT
(100mV/Div)
IOUT
(10A/Div)
UGATE
(20V/Div)
9
RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Application Information
Power On Reset
The RT8101/A automatically initializes upon applying of
input power VCC. The power on reset function (POR)
continually monitors the input bias supply voltage at the
VCC pin. The POR trip level is typically 9.6V at VCC
rising.
VIN Detection
After POR the RT8101/A continuously generates a 10kHz
pulse train with 1μs pulse width to turn on the upper
MOSFET for detecting the existence of VIN. RT8101/A
keeps monitoring PHASE pin voltage during the detection
period.
As soon as the PHASE voltage crosses 1.5V two tim es,
VIN existence is recognized and the RT8101/A initiates
its soft-start cycle as described in next section.
Figure 1
Soft-Start
A built-in soft-start is used to prevent surge current from
VIN to VOUT during power on. After the existence of VIN is
detected, soft-start (SS) begins automatically. The
feedback voltage (VFB) is clamped by internal linear ra mping
up SS voltage, causing PWM pulse width increasing
slowly and thus inducing little surge current. Soft-start
completes when SS voltage exceeds internal reference
voltage (0.8V), the time duration is about 3.2ms.
Over Current Protection
The RT8101/A senses the current flowing through lower
MOSFET for Over Current Protection (OCP) by sensing
the PHASE pin voltage a s shown in the Functional Block
Diagram.
+
-
VIN POR_H PHASE
UGATE
PHASE_M 1.5V
Internal Counter will count (VPHASE > 1.5V)
two times (rising & falling) to recognize when
VIN is ready.
1st 2nd PHASE
waveform
A 30μA current source flows through the internal resistor
21.6kΩ to PHASE pin causing 0.65V voltage drop a cross
the resistor . OCP is triggered if the voltage at PHASE pin
(drop of lower MOSFET VDS) is lower than −0.25V when
low side MOSFET conducting. Accordingly inductor
current threshold for OCP is a function of conducting
resista nce of lower MOSFET RDS(ON) as :
OCSET DS(ON)
30 A 21.6k-0.4V
IR
μ
×
=
If MOSFET with RDS(ON) = 10mΩ is used, the OCP
threshold current is about 25A. Once OCP is triggered,
the RT8101/A enters hiccup mode and re-soft starts again.
The RT8101/A shuts down after OCP hiccups twice.
Figure 3. Power On then Shorted
Figure 4. Shorted then Power On
OCP
Time (2.5ms/Div)
UGATE
(10V/Div)
IOUT
(10A/Div)
OCP
Time (2.5ms/Div)
UGATE
(10V/Div)
IOUT
(10A/Div)
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
1) Modulator Frequency Equations
The modulator transfer function is the small-signal transfer
function of VOUT / VCOMP (output voltage over the error
amplifier output. This tra n sfer function is domin ated by a
DC gain, a double pole, and a zero a s shown in Figure 7.
The DC gain of the modulator is the input voltage (VIN)
divided by the peak to peak oscillator voltage VOSC. The
output LC filter introduces a double pole, 40dB/decade
gain slope above its corner resonant frequency , and a total
pha se lag of 180 degrees. The resona nt frequency of the
LC filter is expressed as below:
OUTOUT
LC CL2 1
f×
=
Ï€
ESRC2 1
fOUT
ESR ××
=
Ï€
The ESR zero is contributed by the ESR a ssociated with
the output capacitance. Note that this requires that the
output capacitor should have enough ESR to satisfy
stability requirements. The ESR zero of the output
capacitor is expressed as follows :
2) Compensation Frequency Equations
The compensation network consists of the error amplifier
and the impedance networks ZC and ZF as shown in
Figure 6.
Figure 6. Compensation Loop
C2 x R2 x 2 1
fZ1
Ï€
=
C2C1 C2 x C1
x R2 x 2 1
fP1
+
=
Ï€
+
-FB
VREF
COMP EA
ZC
ZF
C1
C2
R2 R1
RF
VOUT
Feedback Compensation
The RT8101/A is a voltage mode controller. The control
loop is a single voltage feedback path including a
compensator and modulator as shown in Figur e 5. The
modulator consists of the PWM comparator and power
stage. The PWM comparator compares error a mplifier EA
output (COMP) with oscillator (OSC) sawtooth wave to
provide a pulse-width modulated (PWM) with an amplitude
of VIN at the PHASE node. The PWM wave is smoothed
by the output filter LOUT and COUT. The output voltage (VOUT)
is sensed and fed to the inverting input of the error a mplifier.
A well-designed compensator regulates the output voltage
to the reference voltage VREF with fa st transient response
a nd good sta bility.
In order to achieve fast tran sient respon se and accurate
output regulation, an adequate compensator design is
necessary. The goal of the compensation network is to
provide adequate pha se margin (greater than 45 degrees)
and the highest 0dB crossing frequency. It is also
recommended to manipulate loop frequency response that
its gain crosses over 0dB at a slope of −20dB/dec.
Figure 5. Closed Loop
-
+
+
-
OSC
ΔVOSC
ZFB
ZIN
VIN
Driver
Driver
REF
PWM
Comparator
COMP
EA
+
-
REF
EA
ZFB ZIN VOUT
FB
COMP
C1
C2
C3
R1
R2 R3
ESR
PHASE
COUT
VOUT
LOUT
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RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Figure 7 shows the DC/DC converter's gain vs. frequency.
The compensation gain uses external impedance networks
ZC a nd ZF to provide a sta ble, high ba ndwidth loop. High
crossover frequency is desirable for fast transient
response, but it often jeopardizes the system stability. In
order to cancel one of the LC filter poles, place the zero
before the LC filter resonant frequency . In the experience,
place the zero at 75% LC filter resonant frequency.
Crossover frequency should be higher than the ESR zero
but less tha n 1/5 of the switching frequency . The second
pole is pla ced at half of the switching frequency.
Figure 7. Bode Plot
Component Selection
1) Inductor Selection
The selection of output inductor is based on the
considerations of ef ficiency, output power and operating
frequency. Low inductance value has smaller size, but
results in low efficiency, large ripple current and high output
ripple voltage. Generally , an inductor that limits the ripple
current (ΔIL) between 20% and 50% of the output current
is appropriate. Figure 8 shows the typical topology of
synchronous step-down converter and its related
waveforms.
+
S1
S2
VIN
iS1
iS2 IOUT
VOUT
+
-
RL
rC
COUT
iC
VOR
+
-
VOC
+
-
VL
+-
LIL
Frequency
10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz
vdb(vo) vdb(comp2) vdb(lo)
-40
0
40
80
-60
10 100 1k 10k 100k 1M
80
40
0
20
60
-20
-40
-60
Loop Gain
Compensation
Gain
Modulator
Gain
Frequency (Hz)
G a in (d B)
Figure 8. The waveforms of synchronous step-down
converter
According to Figure 8 the ripple current of inductor ca n be
calculated as follows :
(1)
Where :
VIN = Maximum input voltage
VOUT = Output Voltage
Δt = S1 turn on time
ΔIL = Inductor current ripple
fS = Switching frequency
D = Duty Cycle
rC = Equivalent series resistor of output capa citor
LIN OUT
OUTIN
IN
OUT
L
OUTIN
IfsV V
) V(V L
V
V
D ;
fs
D
t ;
t
I
L VV
Δ××
×−=
==Δ
Δ
Δ
=−
VL
VIN - VOUT
- VOUT
IL
IL = IOUT
ΔIL
IS1
IS2
TS
TON TOFF
Vg1
Vg2
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RT8101/A
www.richtek.com DS8101/A-06 April 2011
3) Input Capacitor
The selection of input capacitor is mainly based on its
maximum ripple current capability. The buck converter
draws pulsewise current from the input capacitor during
the on time of S1 a s shown in Figure 8. The RMS value of
ripple current flowing through the input capacitor is
described as :
(6)
The input ca pacitor must be capable of handling this ripple
current. Sometimes, for higher efficiency the low ESR
capacitor is necessarily.
(A) D)-D(1I
rms
IOUT
=
Figure 9. The related waveforms of output ca pacitor
2) Output Ca pa citor
The selection of output capa citor depends on the output
ripple voltage requirement. Practically, the output ripple
voltage is a function of both capacitance value and the
Equivalent Series Resistance (ESR) rC. Figure 9 shows
the related waveforms of output ca pa citor.
The AC impedance of output capacitor at operating
frequency is quite smaller than the load impedance, so
the ripple current (ΔIL) of the inductor current flows mainly
through output capacitor. The output ripple voltage is
described as :
where ΔVOR is caused by ESR and ΔVOC by ca pacitance.
For electrolytic ca p a citor application, typically 90 to 95%
of the output voltage ripple is contributed by the ESR of
output ca p acitor. So Equation (4) could be simplif ied a s :
ΔVOUT = ΔIL x rC
Users could connect ca pacitors in parallel to get calculated
ESR.
(2)
(3)
(4)
(5)
OUT OR OC
t2 C
OUT L C t1
O2
OUT
OUT L L C S
OL
V V V
1
V I r I dt
C1V
V I Ir (1D)T
8C
Δ=Δ+Δ
Δ=Δ×+
Δ=Δ×Δ×+ −
∫
L
dt =dt L
VOUT
=
VOR
IL
IC
dIL
ΔIL
1/2
0
0
ΔIL x rC
VOC
t1 t2
ΔVOC
ΔIL
VIN-VOUT
TS
IOUT
dIL
Thermal Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature 125°C. The
maximum power dissipation depends on the thermal
resistance of IC package, PCB layout, the rate of
surroundings airflow and temperature difference between
junction to a mbient. The maximum power dissipation can
be calculated by following formula :
PD(MAX) = ( TJ(MAX) − TA ) / θJA
Where TJ(MAX) is the maximum operation junction
temperature 125°C, TA is the ambient temperature and the
θJA is the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8101/A, where TJ(MAX) is the maximum junction
temperature of the die (125°C) and TA is the maximum
ambient temperature. The junction to ambient thermal
resistance θJA is layout dependent.
The maximum power dissipation at TA = 25°C can be
calculated by following formula :
PD(MAX) = ( 125°C − 25°C) / (120°C/W) = 0.83W for
SOP-8 pa ckages
PD(MAX) = ( 125°C − 25°C) / (75°C/W) = 1.33W for
SOP-8 (Exposed Pad) pa ck ages
The maximum power dissipation depends on operating
ambient temperature for fixed TJ (MAX) and thermal
resistance θJA. For RT8101/A packages, Figure 10 allows
the designer to see the effect of rising a mbient temperature
on the maximum power allowed.
13
RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Figure 11. The connections of the critical components
in the converter
+
+
LOAD
+
VCC GND
RT8101/A
FB
LGATE
UGATE
IL
IQ1
VOUT
Q2
Q1
IQ2
5V/12V
GND
The power components and the PWM controller should
be placed firstly. Place the input capacitors, especially
the high-frequency cera mic decoupling ca pacitors, close
to the power switches. Place the output inductor and
output capacitors between the MOSFETs and the load.
Also locate the PWM controller near by MOSFETs. A
multi-layer printed circuit board is recommended.
Figure 11 shows the connections of the critical
components in the converter . Note that the capacitors CIN
and COUT each of them represents numerous physical
capacitors.
Use a dedicated grounding pla ne and use via s to ground
all critical components to this layer. Apply another solid
layer as a power plane and cut this plane into smaller
islands of common voltage levels. The power plane should
support the input power and output power nodes. Use
copper filled polygons on the top a nd bottom circuit layers
for the PHASE node, but it is not necessary to oversize
this particular island. Since the PHASE node is subjected
to very high dV/dt voltages, the stray ca pacitance formed
between these islands and the surrounding circuitry will
tend to couple switching noise. Use the remaining printed
circuit layers for small signal routing. The PCB traces
between the PWM controller and the gate of MOSFET
and also the traces connecting source of MOSFET s should
be sized to carry 2A peak currents.
PCB Layout Considerations
MOSFETs switch very fast and efficiently . The speed with
which the current tra n sition s from one device to another
causes voltage spikes across the interconnecting
impedances and parasitic circuit elements. The voltage
spikes can degrade efficiency and radiate noise, that results
in over voltage stress on devices. Careful component
placement layout and printed circuit design can minimize
the voltage spikes induced in the converter . Consider, a s
a n exa mple, the turn-off tra nsition of the upper MOSFET
prior to turn-off, the upper MOSFET wa s carrying the full
load current. During turn-off, current stops flowing in the
upper MOSFET and is picked up by the low side MOSFET
or schottky diode.
Any inducta nce in the switched current path generates a
large voltage spike during the switching interval. Careful
component selections, layout of the critical components,
a nd use shorter and wider PCB tra ces help in minimizing
the magnitude of voltage spikes.
There are two sets of critical components in a DC/DC
converter using the RT8101/A. The switching power
components are most critical because they switch large
amounts of energy, and as such, they tend to generate
equally large amounts of noise. The critical small signal
components are those connected to sensitive nodes or
those supplying critical bypass current.
Figure 10. Derating Curves for RT8101/A Packages
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 20 40 60 80 100 120 140
Ambien t Temper at ur e (°C)
Power Dissipat ion (W)
SOP-8
SOP-8 (Exposed Pad)
14
RT8101/A
www.richtek.com DS8101/A-06 April 2011
Outline Dimension
A
B
J
F
H
M
C
D
I
8-Lead SOP Plastic Package
Dimen sions In Millimeters Dimensions In In ches
Symbol Min Max Min Max
A 4.801 5.004 0.189 0.197
B 3.810 3.988 0.150 0.157
C 1.346 1.753 0.053 0.069
D 0.330 0.508 0.013 0.020
F 1.194 1.346 0.047 0.053
H 0.170 0.254 0.007 0.010
I 0.050 0.254 0.002 0.010
J 5.791 6.200 0.228 0.244
M 0.400 1.270 0.016 0.050
15
RT8101/A
DS8101/A-06 April 2011 www.richtek.com
Richtek Technology Corporation
Headquarter
5F, No. 20, Taiyuen Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
Richtek Technology Corporation
Taipei Office (Marketing)
5F, No. 95, Minchiuan Road, Hsintien City
Taipei County, Taiwan, R.O.C.
Tel: (8862)86672399 Fax: (8862)86672377
Email: marketing@richtek.com
A
B
J
F
H
M
C
D
I
Y
X
EXPOSED THERMAL PAD
(Bottom of Package)
8-Lead SOP (Exposed Pad) Plastic Package
Dimensions In Millimeters Dimensions In Inches
Symbol Min Max Min Max
A 4.801 5.004 0.189 0.197
B 3.810 4.000 0.150 0.157
C 1.346 1.753 0.053 0.069
D 0.330 0.510 0.013 0.020
F 1.194 1.346 0.047 0.053
H 0.170 0.254 0.007 0.010
I 0.000 0.152 0.000 0.006
J 5.791 6.200 0.228 0.244
M 0.406 1.270 0.016 0.050
X 2.000 2.300 0.079 0.091
Option 1 Y 2.000 2.300 0.079 0.091
X 2.100 2.500 0.083 0.098
Option 2 Y 3.000 3.500 0.118 0.138