Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1837
Silicon N Channel MOS FET REJ03G0979-0200
(Previous : AD E-208- 1 326)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1. Gate
2. Drain (Flange)
3. Source
D
G
S
123
2SK1837
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 50 A
Drain peak current ID(pulse)*1 200 A
Body to drain diode reverse drain current IDR 50 A
Channel dissipation Pch*2 250 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.085 0.11 Ω I
D = 25 A, VGS= 10 V*3
Forward transfer admittance |yfs| 22 35 — S ID = 25 A, VDS = 10 V*3
Input capacitan ce Ciss — 8150 — pF
Output capacitance Coss — 2100 — pF
Reverse transfer capacitance Crss — 180 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 80 — ns
Rise time tr — 250 — ns
Turn-off delay time td(off) — 550 — ns
Fall time tf — 220 — ns
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
Body to drain diode forward voltage VDF — 1.1 — V IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time trr — 620 — ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
2SK1837
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
400
300
200
100
050 100 150 200 1 3 10 30 100 300 1000
0.1
0.3
1
3
10
30
100
PW = 10 ms (1 shot)
10 s
µ
Operation in this area
is limited by RDS(on)
1 ms
Ta = 25°C
300
1000
DC Operation (Tc = 25°C)
100 ms
048121620
20
40
60
80
100 8 V
10 V 6 V
5.5 V
5 V
4.5 V
Pulse Test
V = 4 V
GS
0246810
20
40
60
80
100
Tc = 75°C25°C
– 25°C
V = 20 V
Pulse Test
DS
048121620
1
3
2
4
5
Pulse Test
50 A
20 A
I = 10 A
D
5 10 20 50 100 200 500
0.01
0.02
0.05
0.1
0.2
0.5
1
Pulse Test
V = 10, 15 V
GS
2SK1837
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
0.5
0.4
0.3
0.2
0.1
0
–40 0 40 80 120 160
Pulse Test
20 A
I = 50 A
D
10 A
0.5 1 2 5 10 20 50
0.5
1
2
5
10
20
50
Tc = – 25°C
25°C
75°C
DS
V = 20 V
Pulse Test
0.5 1 2 5 10 20 50
10
20
50
100
200
500
1000
di / dt = 100 A / s
V = 0, Ta = 25°C
µ
GS
01020304050
10
100
1000
10000
V = 0
f = 1 MHz
GS
Ciss
Ciss
Crss
0 80 160 240 320 400
100
200
300
400
500
0
4
8
12
16
20
250 V
400 V
250 V
100 V
V
DS
GS
V = 100 V
DD
V = 400 V
DD
V
I = 50 A
D
0.5 1 2 5 10 20 50
50
100
200
500
1000
2000
5000
td (off)
tf
tr
td (on)
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
2SK1837
Rev.2.00 Sep 07, 2005 page 5 of 6
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit Waveforms
00.40.8
1.2 1.6 2.0
20
60
40
80
100
0, – 5 V
Pulse Test
V = 10 V
GS
10 100 1 m 10 m 100 m 10
0.01
0.03
0.1
0.3
1
3
µµ
D = 1
0.5
0.2
0.1
0.05
0.02
1 shot Pulse
Tc = 25°C
0.01
1
θch – c(t) = γs(t) • θch – c
θch – c = 0.5°C / W, Tc = 25°C
PD = PW
T
PW
T
DM
Vin Monitor
Vout Monitor
R
50
Vin
10 V
D.U.T
L
Ω
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
VDD
= 30 V
2SK1837
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
20.0 ± 0.3
φ3.3 ± 0.2
1.4
2.2
3.0
1.2
5.45 ± 0.5
5.45 ± 0.5
1.0
3.8
7.4
2.8 ± 0.2
0.6
5.0 ± 0.2
6.0 ± 0.2
26.0 ± 0.3
20.0 ± 0.6
2.5 ± 0.3
+0.25
–0.1
+0.25
–0.1
Package Name
PRSS0004ZF-A TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1837-E 500 pcs Box (Case)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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