BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary * N-Channel VDS * Enhancement mode RDS(on) * Logic Level ID * dv/dt rated 100 V 6 0.17 A PG-SOT23 3 Drain pin 3 * Qualified according to AEC Q101 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel SAs BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel SAs Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25C 0.17 TA=70C 0.14 Pulsed drain current Unit I D puls 0.68 dv/dt 6 VGS 20 TA=25C Reverse diode dv/dt kV/s IS=0.17A, VDS=80V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1a Ptot 0.36 W -55... +150 C TA=25C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2010-05-12 BSS123 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimum footprint Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250A Gate threshold voltage, VGS = VDS ID=50A Zero gate voltage drain current A I DSS VDS=100V, VGS=0, Tj=25C - - 0.01 VDS=100V, VGS=0, Tj=150C - - 5 I GSS - - 10 nA RDS(on) - 4 10 RDS(on) - 3 6 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2010-05-12 BSS123 Rev. 1.41 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.09 0.19 - S pF Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max, ID=0.14A Input capacitance Ciss VGS=0, VDS=25V, - 55 69 Output capacitance Coss f=1MHz - 8.5 10.6 Reverse transfer capacitance Crss - 5 6.3 Turn-on delay time td(on) VDD=50V, VGS=10V, - 2.7 4 Rise time tr ID=0.17A, RG=6 - 3.1 4.6 Turn-off delay time td(off) - 9.9 14.8 Fall time tf - 25 37 - 0.055 - 0.77 1.15 - 1.78 2.67 V(plateau) VDD =80V, ID = 0.17 A - 2.6 - V IS - - 0.17 A - - 0.68 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =80V, ID =0.17A VDD =80V, ID =0.17A, 0.082 nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.81 1.2 V Reverse recovery time trr VR=50V, I F=lS , - 27.6 41.1 ns Reverse recovery charge Qrr diF/dt=100A/s - 10.5 15.7 nC Page 3 2010-05-12 BSS123 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS 10 V 0.38 BSS123 BSS123 0.18 W A 0.32 0.14 0.12 0.24 ID P tot 0.28 0.1 0.2 0.08 0.16 0.12 0.06 0.08 0.04 0.04 0.02 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 C parameter : D = tp /T 10 C 1 BSS123 10 3 BSS123 K/W A 10 2 0 /ID ID = RD S n (o V tp = 120.0s DS Z thJA 10 ) 1 ms 10 -1 10 1 10 0 D = 0.50 10 ms 0.20 10 -1 0.10 0.05 10 -2 0.02 10 -2 10 -3 0 10 10 1 0.01 single pulse DC 10 2 V 10 3 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2010-05-12 BSS123 Rev. 1.41 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 C, VGS parameter: Tj = 25 C, VGS A 0.6 0.55 ID 0.5 0.45 0.4 20 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 16 R DS(on) 0.7 14 12 10 0.35 0.3 8 0.25 6 0.2 0.15 4 0.1 2 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 A VDS 0.7 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 C parameter: Tj = 25 C 0.7 0.4 A S 0.3 ID gfs 0.5 0.25 0.4 0.2 0.3 0.15 0.2 0.1 0.1 0 0 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 ID Page 5 2010-05-12 BSS123 Rev. 1.41 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V parameter: VGS = VDS ; ID =50A 24 BSS123 2.2 V 98% 1.8 18 V GS(th) R DS(on) 20 16 1.6 1.4 typ. 14 1.2 12 1 10 2% 0.8 8 98% 0.6 6 0.4 4 typ 0.2 2 0 -60 -20 20 60 100 C 0 -60 180 -20 20 60 100 Tj C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 C parameter: Tj 10 3 10 0 pF BSS123 A 10 1 10 -1 Ciss IF 2 C 10 Coss 10 -2 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-05-12 BSS123 Rev. 1.41 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.17 A pulsed, Tj = 25 C 16 BSS123 BSS123 120 V V (BR)DSS V V GS 12 10 114 112 110 108 106 8 0.2 VDS max 104 0.5 VDS max 6 102 0.8 VDS max 100 98 4 96 94 2 92 0 0 0.4 0.8 1.2 1.6 2 nC 2.8 QG 90 -60 -20 20 60 100 C 180 Tj Page 7 2010-05-12 BSS123 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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