2010-05-12
Page 1
Rev. 1.41
BSS123
SIPMOS Small-Signal-Transistor
Product Summary
V
DS
100 V
R
DS(on)
6Ω
I
D
0.17 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
PG-SOT23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
SAs
SAs
Type Package Pb-free Tape and Reel Information
BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel
BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
0.17
0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
0.68
Reverse diode dv/dt
I
S
=0.17A, V
DS
=80V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a
Power dissipation
T
A
=25°C
P
tot
0.36 W
Operating and storage temperature T
j ,
T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1
55/150/56
• Qualified according to AEC Q101
2010-05-12
Page 2
Rev. 1.41
BSS123
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - ambient
at minimum footprint R
thJA
- - 350 K/W
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250µA
V
(BR)DSS
100 - - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=50µA
V
GS(th)
0.8 1.4 1.8
Zero gate voltage drain current
V
DS
=100V, V
GS
=0, T
j
=25°C
V
DS
=100V, V
GS
=0, T
j
=150°C
I
DSS
-
-
-
-
0.01
5
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
- - 10 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.13A
R
DS(on)
- 4 10 Ω
Drain-source on-state resistance
V
GS
=10V, I
D
=0.17A
R
DS(on)
- 3 6
2010-05-12
Page 3
Rev. 1.41
BSS123
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.14A
0.09 0.19 - S
Input capacitance C
iss V
GS
=0, V
DS
=25V,
f=1MHz
- 55 69 pF
Output capacitance C
oss
- 8.5 10.6
Reverse transfer capacitance C
rss
- 5 6.3
Turn-on delay time t
d(on) V
DD
=50V, V
GS
=10V,
I
D
=0.17A, R
G
=6Ω
- 2.7 4 ns
Rise time t
r
- 3.1 4.6
Turn-off delay time t
d(off)
- 9.9 14.8
Fall time t
f
- 25 37
Gate Charge Characteristics
Gate to source charge Q
gs V
DD
=80V, I
D
=0.17A
- 0.055 0.082 nC
Gate to drain charge Q
gd
- 0.77 1.15
Gate charge total Q
gV
DD
=80V, I
D
=0.17A,
V
GS
=0 to 10V
- 1.78 2.67
Gate plateau voltage V
(plateau) V
DD
=80V, I
D
= 0.17 A
- 2.6 - V
Reverse Diode
Inverse diode continuous
forward current I
ST
A
=25°C
- - 0.17 A
Inv. diode direct current, pulsed
I
SM
- - 0.68
Inverse diode forward voltage V
SD V
GS
=0, I
F
= I
S
- 0.81 1.2 V
Reverse recovery time t
rr V
R
=50V, I
F=
l
S
,
di
F
/dt=100A/µs
- 27.6 41.1 ns
Reverse recovery charge Q
rr
- 10.5 15.7 nC
2010-05-12
Page 4
Rev. 1.41
BSS123
1 Power dissipation
P
tot
= f (
T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
BSS123
P
tot
2 Drain current
I
D
= f (
T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
A
0.18
BSS123
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSS123
I
D
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 120.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSS123
Z
thJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2010-05-12
Page 5
Rev. 1.41
BSS123
5 Typ. output characteristic
I
D
= f (
V
DS
)
parameter: T
j
= 25 °C, V
GS
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
DS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
A
0.7
I
D
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 °C,
V
GS
0 0.1 0.2 0.3 0.4 0.5
A
0.7
I
D
0
2
4
6
8
10
12
14
16
Ω
20
R
DS(on)
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: T
j
= 25 °C
0 0.5 1 1.5 2 2.5 3 3.5 4
V
5
V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.1 0.2 0.3 0.4 0.5
A
0.7
I
D
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
g
fs
2010-05-12
Page 6
Rev. 1.41
BSS123
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.17 A,
V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
2
4
6
8
10
12
14
16
18
20
Ω
24
BSS123
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=50µA
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0, f=1 MHz, T
j
= 25 °C
0 4 8 12 16 20 24 28
V
36
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
iss
C
oss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-3
10
-2
10
-1
10
0
10
A
BSS123
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
0 0.4 0.8 1.2 1.6 2
nC
2.8
Q
G
0
2
4
6
8
10
12
V
16
BSS123
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (
T
j
)
-60 -20 20 60 100
°C
180
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
BSS123
V
(BR)DSS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Page 6
Rev. 1.41
BSS123
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.17 A,
V
GS
= 10 V
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Page 7
Rev. 1.41
BSS123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.17 A pulsed, T
j
= 25 °C
2010-05-12
Pag 8
BSS123
