TS13003
High Voltage NPN Transistor
1/5
Version: I13
TO
-
92
PRODUCT SUMMARY
BV
CEO
400V
BV
CBO
700V
I
C
1.5A
V
CE(SAT)
1V @ I
C
=0.5A, I
B
=0.1A
Features
High Voltage
High Speed Switching
Block Diagram
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No. Package Packing
TS13003CT B0 TO-92 1Kpcs / Bulk
TS13003CT B0G TO-92 1Kpcs / Bulk
TS13003CT A3 TO-92 2Kpcs / Ammo
TS13003CT A3G TO-92 2Kpcs / Ammo
Note: “G” denote for Halogen free
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
CBO
700 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
9 V
Collector Current DC I
C
1.5 A
Pulse 3
Total Power Dissipation @ Tc= 25
o
C P
TOT
1.5 W
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Ambient Thermal Resistance RӨ
JA
122
o
C/W
Pin
Definition
:
1. Emitter
2. Collector
3. Base
TS13003
High Voltage NPN Transistor
2/5
Version: I13
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Collector-Base Voltage I
C
= 1mA, I
B
= 0 BV
CBO
700 -- -- V
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
E
= 0 BV
CEO
400 -- -- V
Emitter-Base Breakdown Voltage I
E
= 1mA, I
C
= 0 BV
EBO
9 -- -- V
Collector Cutoff Current V
CB
= 700V, I
E
= 0 I
CBO
-- -- 1 uA
Emitter Cutoff Current V
EB
= 9V, I
C
= 0 I
EBO
-- -- 1 uA
Collector-Emitter Saturation Voltage
*
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A
I
C
/ I
B
= 1.5A / 0.5A
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
--
--
--
0.25
0.5
1.2
0.5
1
3 V
Base-Emitter Saturation Voltage
*
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A V
BE(SAT)1
V
BE(SAT)2
--
-- --
-- 1
1.2 V
DC Current Gain
*
V
CE
= 5V, I
C
= 10mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 2V, I
C
= 1A
h
FE
6
20
6
--
--
--
40
40
35
Dynamic Characteristics
Frequency V
CE
= 10V, I
C
= 0.1A f
T
4 -- -- MHz
Output Capacitance V
CB
= 10V, f = 0.1MHz Cob -- 21 -- pF
Resistive Load Switching Time (Ratings)
Delay Time V
CC
= 125V, I
C
= 1A,
I
B1
= I
B2
= 0.2A,
t
p
= 25uS
Duty Cycle 1%
t
d
-- 0.05 0.2 uS
Rise Time t
r
-- 0.5 1 uS
Storage Time t
STG
-- 2 4 uS
Fall Time t
f
-- 0.4 0.7 uS
*
Note: pulse test: pulse width 300uS, duty cycle 2%
TS13003
High Voltage NPN Transistor
3/5
Version: I13
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. V
CE(SAT)
v.s. V
BE(SAT
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
TS13003
High Voltage NPN Transistor
4/5
Version: I13
TO-92 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
TS13003
High Voltage NPN Transistor
5/5
Version: I13
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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