THIN FILM CHIP RESISTORS MSTF 2 SERIES MECHANICAL DA TA DAT 0.020" SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS 0.020" x 0.020" (0.003") x 0.010" (0.003") SILICON, ALUMINA, QUARTZ, OR GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 A MINIMUM GOLD 10,000 A MINIMUM ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL BACKSIDE SURFACE A ELECTRICAL DA TA DAT 0.020" Minimum bonding area for < 100 Ohm resistance. Layout varies with value. RESIST ANCE RANGE RESISTANCE SILICON, QUARTZ, GLASS ALUMINA ABSOLUTE TOLERANCE T.C.R. SILICON, QUARTZ, GLASS ALUMINA NICHROME 2 TO 1.5M 1.5M 2 TO 300K 300K 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAILABLE TANT ALUM NITRIDE ANTALUM 2 TO 1.5M 1.5M 2 TO 300K 300K 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAILABLE 50ppm/C ST ANDARD STANDARD OPTIONAL TO 5ppm/C 50ppm/C ST ANDARD STANDARD OPTIONAL TO 25ppm/C 150ppm/C ST ANDARD STANDARD OPTIONAL TO 10ppm/C 150ppm/C ST ANDARD STANDARD OPTIONAL TO25ppm/C SERIES DA TA DAT 101 TO 250K : -40dB 101 250K 100 , 250K : -30dB 100 250K 400V MIN. 1012 MIN. 100 V MAX. CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE TING VOL TAGE OPERA OPERATING VOLT POWER RA TING RATING SILICON, ALUMINA QUARTZ, GLASS SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRAY DISTRIBUTED CAP ACIT ANCE CAPACIT ACITANCE SILICON / NiCr OR TTaN aN ALUMINA / NiCr ALUMINA / TTaN aN QUARTZ / NiCr QUARTZ / TTaN aN GLASS / NiCr GLASS / TTaN aN 250mW (70C DERA TED LINEARL Y TO 150C) P = E 2/R DERATED LINEARLY 50mW (70C DERA TED LINEARL Y TO 150C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. 0.225% MAX. R/R: 0.1% MSI TYPICAL RATED 25C, 5 SEC., 0. 150C, 100 HRS., 0.25% 0.25% MAX. R/R: 0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. R/R: 0.1% MSI TYPICAL 107F,, 0.25% MIL-STD 202, METHOD 106, 0. 0. 0.11% MSI TYPICAL 0.55% MAX. R/R: 0. 1000 HRS., 70 C, 100% POWER 0.5% MAX. R/R: 0.1% MSI TYPICAL 70C, POWER,, 0.5% -5 -555C TO +150C 2pF 0.06pF 0.08pF 0.02pF 0.05pF 0.04pF 0.06pF PART NUMBER DESIGNA TION DESIGNATION MSTF 2 X X XXXXX X SERIES SUBSTRA TE SUBSTRATE RESISTIVE FILM OHMIC VALUE TOLERANCE N = Nichrome T = Tantalum Nitride 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. A G Q S = = = = Alumina Glass Quartz Silicon MINI-SYSTEMS, INC. THIN FILM DIVISION 45 FRANK MOSSBERG DRIVE, ATTLEBORO, MA 02703 508-226-2111 FAX: 508-226-2211 DCN TF 101-D-0698 S X Q B D F G J K = 0.01%* = 0.02%* = 0.05%* = 0.1% = 0.5% = 1% = 2% = 5% = 10% X OPTION A B C D E F G GB = 50ppm/C = 25ppm/C = 10ppm/C = 5ppm/C = Aluminum Bond Pads = 100ppm/C = Gold Bond Pads Std.** = Gold Backside EXAMPLE: MSTF 2SN-50R00F-GB = 0.020" x 0.020", Silicon Substrate, Nichrome Resistor , 1% TTol., ol., 50 ppm/C, Gold Backside. Resistor,, 50 50 * Value dependent on Alumina. Consult sales. **Always used when no other option is required. 9