DATA SH EET
Product specification October 2002
DISCRETE SEMICONDUCTORS
BT258S-800R
Thyristors
logic level
NXP Semiconductors Product specification
Thyristors BT258S-800R
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristor in SYMBOL PARAMETER MAX. UNIT
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and VDRM, VRRM Repetitive peak off-state voltages 800 V
phase control applications. These IT(AV)
devices are intended to be interfaced IT(RMS) Average on-state current 5 A
directly to microcontrollers, logic ITSM RMS on-state current 8 A
integrated circuits and other low Non-repetitive peak on-state current 75 A
power gate trigger circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN
NUMBER
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state - 800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
IT(RMS) RMS on-state current all conduction angles - 8 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 75 A
t = 8.3 ms - 82 A
I2tI
2t for fusing t = 10 ms - 28 A2s
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
IGM Peak gate current - 2 A
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 1251˚C
temperature
1
2
3
tab
ak
g
1 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 2002 1 Rev 2.000
NXP Semiconductors Product specification
Thyristors BT258S-800R
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 2.0 K/W
junction to mounting base
Rth j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 50 200 µA
ILLatching current VD = 12 V; IGT = 0.1 A - 0.4 10 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 0.3 6 mA
VTOn-state voltage IT = 16 A - 1.3 1.6 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 50 100 - V/µs
off-state voltage exponential waveform; RGK = 100 Ω
tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
October 2002 2 Rev 2.000
NXP Semiconductors Product specification
Thyristors BT258S-800R
logic level
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0246
0
2
4
6
8a = 1.57
1.9
2.2
2.8
4
IT(AV) (A)
Ptot (W) Tmb(max) (˚C)
125
123
121
119
117
115
113
111
109
30 4
conduction
angle form
degrees
60
90
120
180
(a)
2.8
2.2
1.9
1.57
factor
1 10 100 1000
0
40
Number of half cycles at 50Hz
ITSM / A
10
20
30
50
60
70
80
TITSM
time
I
T
Tj initial = 25 C max
10
100
1000
10us 100us 1ms 10ms
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
4
8
12
16
20
24
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
1
2
3
4
5
6
7
8
9BT258
Tmb / C
IT(RMS) / A
111 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
October 2002 3 Rev 2.000
NXP Semiconductors Product specification
Thyristors BT258S-800R
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
10
20
30
typ
VT / V
IT / A
max
Vo = 1 V
Rs = 0.04 Ω
Tj = 125 °C
Tj = 25 °C
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT150
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
1
10
100
1000
Tj / C
dVD/dt (V/us)
RGK = 100 ohms
October 2002 4 Rev 2.000
NXP Semiconductors Product specification
Thyristors BT258S-800R
logic level
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.13. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
October 2002 5 Rev 2.000
NXP Semiconductors
Legal information
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