2SK2022-01M N-channel MOS-FET FAP-IIA Series 500V > Features - 1,6 5A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 5 20 30 40 150 -55 ~ +150 Unit V V A A V W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t I I I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 L=100H Tch=25C Min. 500 2,5 2 Typ. 3,0 10 0,2 10 1,2 4 1000 85 20 20 15 45 20 DRM rr rr Symbol R th(ch-a) R th(ch-c) IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Test conditions channel to air channel to case 3,5 500 1,0 100 1,6 1500 130 30 30 25 70 30 5 DR SD Max. 1,1 400 2 Min. Typ. Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com 5 20 1,65 Max. 62,5 3,125 Unit V V A mA nA S pF pF pF ns ns ns ns A A A V ns C Unit C/W C/W 2SK2022-01M N-channel MOS-FET 500V 1,6 5A FAP-IIA Series 40W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Tch [C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ID [A] Tch [C] VDS [V] C [nF] 8 VDS [V] Qg [nC] Allowable Power Dissipation vs. TC IF [A] Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 Typical Capacitance vs. VDS VGS [V] gfs [S] RDS(ON) [] ID [A] Typical Forward Transconductance vs. ID 4 3 ID [A] ID [A] VDS [V] 2 RDS(ON) [] 1 Typical Transfer Characteristics 9 VSD [V] Safe operation area Zth(ch-c) [K/W] 12 11 ID [A] 10 PD [W] Transient Thermal impedance Tc [C] VDS [V] This specification is subject to change without notice! t [s]