Bipolar Transistor Description: This NPN transistor in a TO-3 package is designed for high voltage switching applications. Applications: * * * * * * Off Line Power Supplies Converter Circuits Pulse Width Modulated Regulators Specification Feature: High Voltage Capability Fast Switching Speeds Low Saturation Voltage Absolute maximum Ratings: Collector-Emitter Voltage, Vceo Collector-Emitter Voltage, Vcex Collector-Emitter Voltage, Vcev Emitter-Base Voltage, veb Collector Current, Continuous Ic Base Current Peak, Icm Total Device Dissipation (Tc = +25C), Pd Derate Above 25C Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, Rthjc Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), Tl : 400V : 450V : 650V : 8V : 15A : 20A : 175W : 1.0W/C : -65C to +200C : -65C to +200C : 1.0C/W : +275C Electrical Characteristics: (Ta = +25C Unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit Collector-Emitter Sustaining Voltage Vceo (sus) Ic = 200mA, Ib = 0 400 - V Collector Cut-off Current Icev Vce = 650V, Veb(off) = -1.5V - 0.1 Vce = 650V, Veb (off) = 1.5V, Tc = +100C - 1.0 Iebo Veb = 8V, Ic = 0 - 2.0 DC Current Gain hfe Ic = 15A, Vce = 3V 8 - Collector-Emitter Saturation Voltage Vce(sat) Ic = 15A, Ib = 3A - 1.5 Base-Emitter Saturation Voltage Vbe(sat) Ic = 15A, Vce = 3A Current Gain-Bandwidth Product fT Vce = 20V, Ic = 20mA, f = 100MHz 3 - MHz Output Capacitance Cob Vcb = 10V, Ie = 0, f = 1MHz - 500 pF OFF Characteristics Emitter Cut-off Current mA ON Characteristics (Note 1) 1.5 V Dynamic Characteristics www.element14.com www.farnell.com www.newark.com Page <1> 10/09/12 V1.0 Bipolar Transistor Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Vcc = 200V, Ic = 15A, Ib1 = Ib2 = 3A Duty Cycle < 2% = Vbb = 6V, Rl = 13.5 - 0.2 - 0.6 - 2.5 - 0.6 s Notes: 1. Pulse Test: Pulse Width 300s, Duty Cycle < 2%. = Dim Min Max A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.2 26.67 F 0.92 1.09 G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Part Number Table Description Part Number Transistor, Bipolar, Metal, TO-3, NPN 2N6678 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 10/09/12 V1.0