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Page <1> V1.010/09/12
Bipolar Transistor
Description:
This NPN transistor in a TO–3 package is designed
for high voltage switching applications.
Applications:
• Off Line Power Supplies
• Converter Circuits
• Pulse Width Modulated Regulators Specication Feature:
• High Voltage Capability
• Fast Switching Speeds
• Low Saturation Voltage
Absolute maximum Ratings:
Collector-Emitter Voltage, Vceo : 400V
Collector-Emitter Voltage, Vcex : 450V
Collector-Emitter Voltage, Vcev : 650V
Emitter-Base Voltage, veb : 8V
Collector Current, Continuous Ic : 15A
Base Current Peak, Icm : 20A
Total Device Dissipation (Tc = +25°C), Pd : 175W
Derate Above 25°C : 1.0W/°C
Operating Junction Temperature Range, Tj : -65°C to +200°C
Storage Temperature Range, Tstg : -65°C to +200°C
Thermal Resistance, Junction-to-Case, Rthjc : 1.0°C/W
Maximum Lead Temperature
(During Soldering, 1/8” from case, 5sec), Tl : +275°C
Electrical Characteristics: (Ta = +25ºC Unless otherwise specied)
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage Vceo (sus)Ic = 200mA, Ib = 0 400 - V
Collector Cut-off Current Icev Vce = 650V, Veb(off) = -1.5V -0.1
mAVce = 650V, Veb (off) = 1.5V, Tc = +100°C -1.0
Emitter Cut-off Current Iebo Veb = 8V, Ic = 0 -2.0
ON Characteristics (Note 1)
DC Current Gain hfe Ic = 15A, Vce = 3V 8- -
Collector-Emitter Saturation Voltage Vce(sat)Ic = 15A, Ib = 3A -1.5 V
Base-Emitter Saturation Voltage Vbe(sat)Ic = 15A, Vce = 3A 1.5
Dynamic Characteristics
Current Gain-Bandwidth Product fTVce = 20V, Ic = 20mA, f = 100MHz 3 - MHz
Output Capacitance Cob Vcb = 10V, Ie = 0, f = 1MHz -500 pF