TOSHIBA 28C2500 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2$C2500 STROBE FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 5 IMAX. e High DC Current Gain and Excellent hp Linearity : hFE (1)=140~600 (VcR=1V, Ic =0.5A) : hyE (2)=70 (Min.), 200 (Typ.) (VoR=1V, Ig=2A) 8.2MAX. e 6Low Saturation Voltage 0.75MAX: : VCE (sat) =0.5V (Max.) I=2A, Ip =50mA) LOMAX. ot! | 0.8MAX. 2 x z MAXIMUM RATINGS (Ta = 25C) 0.6MAX., 2 is CHARACTERISTIC SYMBOL RATING UNIT H Collector-Base Voltage VCBO 30 Vv 1.27 27 Vv 30 2.54 < Collector-Emitter Voltage CES Vv = a\ VCEO 10 cmap St 2 Emitter-Base Voltage VEBO 6 Vv z Collector DC Ic 2 A 1. EMITTER Current Pulsed (Note 1) | Icp 5 > See Base Current Ip 0.5 A JEDEC TO.92MOD Collector Power Dissipation Pc 900 mW . Junction Temperature Tj 150 C EIAJ _ Storage Temperature Range Tstg 55~150 C TOSHIBA 2-5J1A Weight : 0.36 Note 1 : Pulse Width=10ms, Duty Cycle=30% ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo Vcp=s0V, Ip=0 100 nA Emitter Cut-off Current IrkBO VEB=6V, Ic =0 100 nA Collector-Emitter Breakdown _ _ Voltage VcEo |Ic=10mA, Ip=0 10 _ _ Vv Emitter-Base Breakdown _ _ Voltage VEBO Ip=1mA, Ic=0 6 _ _ Vv hFE (1) _ _ Vcog=lv, I=0.5A 140 600 DC Current Gain (Note 2) CE C hee (2) | VCR=1V, IG=2A 70 200 Collector-Emitter Saturation Voltage VCE (sat) |Ic=2A, Ip=50mA _ 0.2] 0.5 Vv Base-Emitter Voltage VBE VcCE=I1V, Ic=2A 0.86 1.5 Vv Transition Frequency ft VCE=1V, Ic =0.5A 150 MHz Collector Output Capacitance Cob Vcp=10V, Iz=0, f=1MHz| 27 pF Note 2 : hrp (1) Classification A: 140~240, B : 200~330, C : 300~450, D : 420~600 1 2001-05-24TOSHIBA 28C2500 I VCE I VBE COMMON EMITTER Ta=25C COMMON EMITTER a| VOE=1V iy Ta =100C/25f-4 25 I COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT Ic (A) 0 1 2 3 4 5 6 7 0 o2 O4 06 O8 10 12 214 COLLECTOR-EMITTER VOLTAGE Vcg (V) BASE-EMITTER VOLTAGE Vpp (CV) VCE (sat) Ic z S _(0.5| COMMON EMITTER hrE Ic B I/Ig=40 500