SiC Power Module Datasheet BSM300C12P3E301 Application Circuit diagram Converter 1 7 9 8 3,4 6(N.C) Features 5 1) Low surge, low switching loss. 10 1TC 2) High-speed switching possible. 11 2 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 1/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Ratings Drain - Source Voltage VDSS G-S short 1200 Repetitive Reverse Voltage VRRM Clamp diode 1200 Gate - Source Voltage (+) VGSS D-S short 22 Gate - Source Voltage (-) VGSS D-S short -4 VGSSsurge D-S short -4 to 26 ID DC(Tc=60C) VGS=18V 288 ID DC (Tc = 50 300 G - S Voltage (tsurge<300nsec) Drain Current Note 1) IDRM Source Current Note 1) Note 2) DC(Tc=60C) VGS=18V 288 IS DC(Tc=50C) VGS=18V 300 ISRM Pulse (Tc = 60C 1ms VGS=18V Note 2) 600 ISRM Pulse (Tc = 60C 10s VGS=0V Note 2) 600 IF IFRM Total Power Dissipation Note 3) Ptot Note 2 Tc = 25C 600 1360 Tjmax 175 Junction Temperature Tjop -40 to 150 Storage Temperature Tstg -40 to 125 Isolation Voltage Visol Mounting Torque - Note 1) Note 2) Note 3) A 300 DC(Tc = 60) Pulse (Tc = 60 1ms V 600 IS Forward Current (clamp diode) Note 1) Max Junction Temperature Pulse (Tc = 60C 1ms VGS=18V Unit Terminals to baseplate f = 60Hz AC 1 min. 2500 Main Terminals : M6 screw 4.5 Mounting to heat sink M5 screw 3.5 W C Vrms N m Case temperature (Tc) is defined on the surface of base plate just under the chips. Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Tj is less than 175C. Example of acceptable VGS waveform +26V tsurge +22V -4V www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 2/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristics (Tj=25C) Parameter Symbol On-state static Drain-Source Voltage VDS(on) Drain Cutoff Current IDSS Ratings Min. Typ. Max. Conditions Tj=25C Tj=125C Tj=150C ID=300A,VGS=18V VDS=1200V,VGS=0V Tj=25C Tj=125C Tj=150C IF=300A Unit 1.9 2.7 3.0 3.0 4.5 V 10 A 1.6 2.2 2.3 2.1 3.2 V Forward Voltage VF Reverse current IRRM Clamp diode 3.2 mA VGS(th) VDS=10V,ID=80mA 2.7 5.6 V VGS=22V,VDS=0V -0.5 40 35 20 170 30 15 0.9 5 3370 13 14.5 15 12 9 0.5 0.11 0.11 0.035 Gate-Source Threshold Voltage Gate-Source Leak Current IGSS NTC B Value Stray Inductance td(on) tr trr td (off) tf Ciss RGint R25 B50/25 Ls Creepage Distance - Clearance Distance - Switching Characteristics Input Capacitance Gate Registance NTC Rated Resistance Junction-to -Case Thermal Resistance Case-to -heat sink Thermal Resistance Note 4) Note 5) Note 6) VGS=-4V,VDS=0V VGS(on)=18VVGS(off)=0V VDS=600V ID=300A RG(on)=2.7 ohm, RG(off)=2.2 ohm Inductive load VDS=10V,VGS=0V,200kHz Tj=25C Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal UMOSFET1/2 module Note 4) Rth(j-c) Rth(c-f) SBD1/2 module Note 4) Case to heat sink, per 1 module. Thermal grease applied. Note 5 A ns nF k K nH mm mm mm mm C/W Measurement of Tc is to be done at the Wavelength for Switching Test point just under the chip. Eon=IdxVds Eoff=IdxVds Typical value is measured by using thermally conductive grease of =0.9W/(mK). trr SiC devices have lower short cuicuit Vsurge V withstand capability due to high current density. 90% 90% Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short 10% 10% 10% 2% 2% 2% 2% I as possible. If the Product is used beyond absolute maximum ratings defined in the Specifications, as its 90% 10% internal structure may be dameged, please V replace such Product with a new one. DS D Note 7) GS td(on) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 3/10 tr td(off) tf 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.2 Drain source voltage characteristic (TYP) Fig.1 Output characteristic 25C (TYP) 600 VGS=18V Drain source voltage VDS (V) Drain current ID (A) 500 400 8 VGS=16V VGS=14V VGS=20V 300 VGS=12V 200 100 VGS=10V 0 7 VGS=18V 6 Tj=150 5 4 Tj=125 3 Tj=25 2 1 0 0 2 4 6 0 8 200 Drain source voltage VDS (V) 600 Drain current ID (A) Fig.3 Drain source voltage characteristic 25C (TYP) Fig.4 Ron vs Tj characteristic (TYP) 5 20 4 VGS=12V 15 3 VGS=14V VGS=16V Tj=25 Ron (m) Drain source voltage VDS (V) 400 2 VGS=18V 10 VGS=20V ID=300A ID=200A ID=150A 1 5 ID=300A ID=100A 0 0 12 14 16 18 20 22 0 24 Gate source voltage VGS (V) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 50 100 150 200 250 Junction temperature Tj (C) 4/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.5 Forward characteristic of Diode (TYP) Fig.6 Forward characteristic of Diode (TYP) 1000 600 Source current IS (A) Source current IS (A) 500 Tj=150 Tj=125 100 Tj=25 Tj=25 400 300 Tj=150 200 Tj=125 100 10 0 0 1 2 3 4 0 Source drain voltage VF (V) 2 3 4 5 Source drain voltage VF (V) Fig.7 Drain Current vs Gate Voltage (TYP) Fig.8 Drain Current vs Gate Voltage (TYP) 1.0E+03 600 1.0E+02 400 VDS=20V 300 200 Tj=125 Tj=25 Drain Current ID (A) Tj=150 500 Drain Current ID (A) 1 100 Tj=150 1.0E+01 Tj=125 1.0E+00 Tj=25 1.0E-01 VDS=20V 1.0E-02 1.0E-03 0 0 5 10 1.0E-04 15 0 Gate Source Voltage VGS (V) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 5/10 5 10 Gate Source Voltage VGS (V) 15 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.9 Switching time vs drain current at 25C (TYP) Fig.10 Switching time vs drain current at 125C (TYP) 1000 1000 td(off) 100 Switching time (ns) Switching time (ns) td(off) tf td(on) tr 10 tf 100 td(on) tr 10 VDS=600V VGS(on)=18V VGS(off)=0V VDS=600V RG(on)=2.7 VGS(on)=18V RG(off)=2.2 VGS(off)=0V INDUCTIVE LOAD 1 1 0 200 400 600 0 Drain current ID (A) 200 400 600 Drain current ID (A) Fig.11 Switching time vs drain current at 150C (TYP) Fig.12 Switching loss vs drain current at 25C (TYP) 20 1000 18 td(off) 100 tf td(on) 10 tr VDS=600V VGS(on)=18V VGS(off)=0V VDS=600V VGS(on)=18V VGS(off)=0V RG(on)=2.7 RG(off)=2.2 INDUCTIVE LOAD 16 Switching loss (mJ) Switching time (ns) RG(on)=2.7 RG(off)=2.2 INDUCTIVE LOAD RG(on)=2.7 RG(off)=2.2 INDUCTIVE LOAD 14 12 Eoff Eon 10 8 6 4 2 Err 0 1 0 200 400 0 600 Drain current ID (A) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 200 400 600 Drain current ID (A) 6/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.13 Switching loss vs drain current at 125C (TYP) Fig.14 Switching loss vs drain current at 150C (TYP) 20 20 VDS=600V VGS(on)=18V VGS(off)=0V RG(on)=2.7 RG(off)=2.2 INDUCTIVE LOAD 14 12 16 10 8 Eon 6 14 12 10 8 6 4 4 2 2 Err 0 200 400 600 0 Drain current ID (A) 10 100 Irr VDS=600V VGS(on)=18V VGS(off)=0V RG=2.7 INDUCTIVE LOAD 1 Recovery time trr (ns) trr 1000 trr 10 100 Irr VDS=600V VGS(on)=18V VGS(off)=0V RG=2.7 INDUCTIVE LOAD 1 10 10 0 600 Drain current ID (A) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 600 100 1000 400 400 Fig.16 Recovery characteristic vs drain current at 125C (TYP) Recovery current Irr(A) 100 200 200 Drain current ID (A) Fig.15 Recovery characteristic vs drain current at 25C (TYP) Recovery time trr (ns) Err 0 0 0 Eon Recovery current Irr(A) Switching loss (mJ) 16 Eoff VDS=600V VGS(on)=18V VGS(off)=0V RG(on)=2.7 RG(off)=2.2 INDUCTIVE LOAD 18 Eoff Switching loss (mJ) 18 200 400 600 Drain current ID (A) 7/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.17 Recovery characteristic vs drain current at 150C (TYP) 10000 1000 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V 10 100 Irr VDS=600V VGS(on)=18V VGS(off)=0V RG=2.7 INDUCTIVE LOAD 1 Switching time (ns) trr Recovery current Irr(A) Recovery time trr (ns) 100 Fig.18 Switching time vs gate resistance at 25C (TYP) 200 400 td(off) 1000 tr 100 td(on) 1 600 10 100 Gate resistance RG () Drain current ID (A) Fig.19 Switching time vs gate resistance at 125C (TYP) Fig.20 Switching time vs gate resistance at 150C (TYP) 10000 10000 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD Switching time (ns) Switching time (ns) tf 10 10 0 INDUCTIVE LOAD td(off) 1000 INDUCTIVE LOAD td(off) 1000 tf tr 100 td(on) 10 tf tr 100 td(on) 10 1 10 100 1 Gate resistance RG () www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 10 100 Gate resistance RG () 8/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.21 Switching loss vs gate resistance at 25C (TYP) Fig.22 Switching loss vs gate resistance at 125C (TYP) 60 60 40 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD 50 Switching loss (mJ) 50 Switching loss (mJ) Eoff Eon VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD 30 20 40 Eoff Eon 30 20 10 10 Err 0 1 10 Err 0 1 100 Gate resistance RG () 10 100 Gate resistance RG () Fig.23 Switching loss vs gate resistance at 150C (TYP) 60 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD Switching loss (mJ) 50 40 Eoff Eon 30 20 10 Err 0 1 10 100 Gate resistance RG () www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 9/10 22.Feb.2019 - Rev.001 Datasheet BSM300C12P3E301 Electrical characteristic curves (Typical) Fig.24 Capacitance vs Drain source voltage (TYP) Fig.25 Gate charge characteristic (TYP) 25 Gate source voltage VGS(V) 1.E-07 Capacitance(F) Ciss 1.E-08 1.E-09 Tj=25 VGS=0V 200kHz Coss 20 15 10 ID=300A VDS=600V Tj=25 5 Crss 1.E-10 0.01 0 0.1 1 10 100 1000 0 Drain source voltage VDS (V) 200 400 600 800 1000 Gate charge QG (nC) Fig.26 Transient thermal impedance (TYP) Normalized transient thermal impedance 1 0.1 0.01 0.001 Single Pulse Tc=25 Per unit base UMOS part : 0.11/W SBD part :0.11/W 0.01 0.1 1 10 Time (s) www.rohm.com (c) 2019 ROHM Co., Ltd. All rights reserved. 10/10 22.Feb.2019 - Rev.001 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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