BZD17C3V6P to BZD17C200P
Document Number 81821
Rev. 1.0, 09-Jun-09
Vishay Semiconductors
www.vishay.com
1
For technical support, please contact: Diodes-SSP@vishay.com
Zener Diodes
Features
• Sillicon planar zener diodes
• Low profile surface-mount package
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s
at terminals
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO219AB (SMF®) plastic case
Weight: approx. 15 mg
Packaging codes/options:
GS18/10K per 13" reel, (8 mm tape), 50K/box
GS08/3K per 7" reel, (8 mm tape), 30K/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Notes:
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2) Tj = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Notes:
1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
17249
Parameter Te s t con d i t i o n Symbol Value Unit
Power dissipation
TL = 80 °C Ptot 2.3 W
TA = 25 °C Ptot 0.8 1) W
Non-repetitive peak pulse power
dissipation 100 µs square pulse 2) PZSM 300 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air 1) RthJA 180 K/W
Thermal resistance junction to lead RthJL 30 K/W
Maximum junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
Parameter Test condition Symbol Min. Ty p. Max. Unit
Forward voltage IF = 0.2 A VF1.2 V
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Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
For technical support, please contact: Diodes-SSP@vishay.com
Electrical Characteristics
TJ = 25 °C, unless otherwise specified
Note:
1) Pulse test: tp ≤ 5 ms
Part number Marking code
Working voltage 1) Differential
resistance
Temperature
coefficient
Te s t
current
Reverse leakage
current
VZ at IZT rdif at IZαZ at IZIZT IR VR
VΩ%/°C mA µA V
min. max. typ. max. min. max. max.
BZD17C3V6P I0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 1
BZD17C3V9P I1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1
BZD17C4V3P I2 4 4.6 4 7 - 0.12 - 0.02 100 25 1
BZD17C4V7P I3 4.4 5 3 7 - 0.1 0 100 10 1
BZD17C5V1P I4 4.8 5.4 3 6 - 0.08 0.02 100 5 1
BZD17C5V6P I5 5.2 6 2 4 - 0.04 0.04 100 10 2
BZD17C6V2P I6 5.8 6.6 2 3 - 0.01 0.06 100 5 2
BZD17C6V8P I7 6.4 7.2 1 3 0 0.07 100 10 3
BZD17C7V5P I8 7 7.9 1 2 0 0.07 100 50 3
BZD17C8V2P I9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD17C9V1P J0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD17C10P J1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD17C11P J2 10.4 11.6 4 7 0.05 0.1 50 4 8.2
BZD17C12P J3 11.4 12.7 4 7 0.05 0.1 50 3 9.1
BZD17C13P J4 12.4 14.1 5 10 0.05 0.1 50 2 10
BZD17C15P J5 13.8 15.6 5 10 0.05 0.1 50 1 11
BZD17C16P J6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD17C18P J7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD17C20P J8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD17C22P J9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD17C24P K0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD17C27P K1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD17C30P K2 28 32 8 15 0.06 0.11 25 1 22
BZD17C33P K3 31 35 8 15 0.06 0.11 25 1 24
BZD17C36P K4 34 38 21 40 0.06 0.11 10 1 27
BZD17C39P K5 37 41 21 40 0.06 0.11 10 1 30
BZD17C43P K6 40 46 24 45 0.07 0.12 10 1 33
BZD17C47P K7 44 50 24 45 0.07 0.12 10 1 36
BZD17C51P K8 48 54 25 60 0.07 0.12 10 1 39
BZD17C56P K9 52 60 25 60 0.07 0.12 10 1 43
BZD17C62P L0 58 66 25 80 0.08 0.13 10 1 47
BZD17C68P L1 64 72 25 80 0.08 0.13 10 1 51
BZD17C75P L2 70 79 30 100 0.08 0.13 10 1 56
BZD17C82P L3 77 87 30 100 0.08 0.13 10 1 62
BZD17C91P L4 85 96 60 200 0.08 0.13 5 1 68
BZD17C100P L5 94 106 60 200 0.09 0.13 5 1 75
BZD17C110P L6 104 116 80 250 0.09 0.13 5 1 82
BZD17C120P L7 114 127 80 250 0.09 0.13 5 1 91
BZD17C130P L8 124 141 110 300 0.09 0.13 5 1 100
BZD17C150P L9 138 156 130 300 0.09 0.13 5 1 110
BZD17C160P M0 153 171 150 350 0.09 0.13 5 1 120
BZD17C180P M1 168 191 180 400 0.09 0.13 5 1 130
BZD17C200P M2 188 212 200 500 0.09 0.13 5 1 150
BZD17C3V6P to BZD17C200P
Document Number 81821
Rev. 1.0, 09-Jun-09
Vishay Semiconductors
www.vishay.com
3
For technical support, please contact: Diodes-SSP@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.1
1
10
0.6 0.81.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8PC12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
Ptot - Power Dissipation (W)
Tamb - Ambient Temperature (°C)
Ambient temperature
Tie point temperature
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Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
For technical support, please contact: Diodes-SSP@vishay.com
Package Dimensions in millimeters (inches): DO219AB
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.05 (0.002)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
BZD17C3V6P to BZD17C200P
Document Number 81821
Rev. 1.0, 09-Jun-09
Vishay Semiconductors
www.vishay.com
5
For technical support, please contact: Diodes-SSP@vishay.com
Blistertape for SMF Dimensions in millimeters
18513
PS
