$B220 thru SB260 SYNSEMI SEMICONDUCTOR 2.0 Amps. Schottky Barner Rectifiers Voltage Range 20 to 60 Volts Forward Current 2.0 Amperes Features @ MMetal-Semiconductor junction with guard ring @ Epitaxial construction @ Low forward voltage drop @ High current capability @ The plastic material carries UL recognition 94-0 @ For use in low voltage, high tequency inverters, free wheeling, and polarity protection applications DO-204AC (DO-15) i oH 28} 10.g64) Mechanical Data ae @ Case - JEDEC DO-204AC(DO-15) malded plastic I et @ Polarity | Color band denotes cathode LU san 8s @ Weight - 0.014 ounce, 0.39 gram = * @ Mounting position : Any i om 9 ell ie) DIA 1 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Ratings at 252 arnbiert tarperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive bad. For capacitive load, derate current by 209% Parameter Symbob SB?70 SB730 SB? 40 SB2750 SB260 Units Maximum repetitive peak reverse voltage Vewea 20 a0 40 50) aa Volts Masimum RMS voltage Veeses 14 21 28 36 42 Volts Maximum CC blocking voltage Veo 20) 30 40 50) ad Volts Maximum average fonvard rectified current @T,=75C Veen 2.0 Amps Peak fonvard sume current 8.drms single half sinewave b. 60.0 AIrnips superimposed on rated load Masinnurn forward Voltage at 2.04 DS Vv 0,55 O70 Volts Maximum forward Voltage at 1.64 DC F - 0.65 Maxinnur CC reverse current iT =2aC O16 ste at rated DC blocking voltage aT =100C k 16.0 Typical thennal resistance (Nete 1) Roa 20 ah Typical junction capacitance (Nete 24 Cc, 760 pF Operating tamperature range T, -55 to +126 a Storage termperature range Ae -06 to +150 Eis Notes: = 1. Thermal Resistance Junction to Ambient. @ Measured at 1.0 MHz and applied reverse voltage of4 ov DC.RATINGS AND CHARACTERISTIC CURVES $B220 thru $B260 FIG.1 - FORWARD CURRENT DERATING CURVE 25 T T T SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 20 10 05 AVERAGE FORWARD CURRENT AMPERES ao Ei] TS ri) 1 150 75 AMBIENT TEMPERATURE ,C FIG.S - TYPICAL JUNCTION CAPACITANCE 1000 CAPACITANCE . (pF) 3 Ta= 28, F 1 a 10 100 REVERSE VOLTAGE , VOLTS. FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 5 Ey e 3 8 an) e NAT 5 * Pulse width 8 Sms a Single Hall-Sine-Ware. | aa S oe D 4d z 3 0 Fi) 50 100 NUMBER OF CYCLES AT G0Hz FIG.4 - TYPICAL FORWARD CHARACTERISTICS _ o INSTANTANEOUS FORWARD CURRENT ,iA} > o TWH 2se PULSE WIDTH 200us Ua 0 Oz 04 0.6 0.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.S - TYPICAL REVERSE CHARACTERISTICS o INSTANTANEOUS REVERSE CURRENT ,(mA) e 0.001 0 20 40 60 Tae 60 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)