SILICON P LASTIC POWER TRANSISTOR
NPN MJE3055T
10A 75W
Technical Data
…designed for general-purpose switching and amplifier application.
F DC Current Gain - h FE = 20 – 100 @ IC = 4Adc
F Collector-Emitter Saturation Voltage – VCE(sat) = 1.1 Vdc (Max) @ IC = 4Adc
F Excellent Safe Operating Area
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 60 Vdc
Collector – Base Voltage V CB 70 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos I C10 Adc
Base Current – Continuos I B6 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 75
0.6 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 1.67 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =200 mAdc, IB = 0 ] V
CEO(sus)
60 Vdc
Collector Cutoff Current
[ VCB = 70 Vdc, IE=0 ]
[VCB=70Vdc,IE=0,TC=150¼C]
ICBO 1.0 mAdc
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] ICE0 0.70 mAdc
Collector Cutoff Current
[ VCE = 70 Vdc, VBE(off) = 1.5 Vdc ]
[V
CE=70Vdc,VBE(off)=1.5Vdc,TC=150¼C]
ICEX 1.0 mAdc
Emitter Cutoff Current
[ VBE = 5.0 Vdc , Ic = 0 ] IEBO 5.0 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 4.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 10 Adc , VCE = 4.0 Vdc ]
hFE 20
5.0 100
Collector-Emitter Saturation Voltage
[ Ic = 4.0 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
VCE(sat) 1.1
8.0 Vdc
Base-Emitter on Voltage
[ Ic = 4.0 Adc , VCE= 4.0. VDC ] VBE(on) 1.8 Vdc
SECOND BREAKDOWN
Second Breakdown Collector current
With Base Forward Biased
[VCE=37.5Vdc, t = 1.0 s Nonrepetitive]
1s/b 2 Adc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[ Ic = 0.5Adc , VCE=10 Vdc , f=500kHz ] fT2.0 MHz
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%