PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY TEL: (407) 848-4311 Aaiitr . WEST PALM BEACH, FAX: DEVICES, INC. FLORIDA 33407 (407) 863-5946 DOOV, 4.5A, 1.50 ABSOLUTE MAXIMUM RATINGS SDF 430 JAA SDF 430 JAB SDF430 JDA FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCT ION @ CERAMIC EYELETS: JAA, JAB @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @LOW IR LOSSES @LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500 SCREENING PARAMETER SYMBOL. UNITS Drain-source Volt.(1) voss 500 Vde Drain-Gate Voltage (Regt1.0Mn) (1) VOGR 500 Vde Gote-Source Voltage Continuous VGS +20 Vde eres serrgnt Continuous ID 4.5 Adc Drain Current Pulsed(3) 1DM 15 A Total Power Dissipation PO 75 W Power Dissipation e Derating > 25C 0.6 W7eC Operating & Storage Temp. | TJ/Tsig -55 TO +150 C Thermal Resistance Rthde 1.7 C/W Max.Lead temperature TL 300 C ELECTRICAL CHARACTERISTICS Te =25c UNLESS OTHER- WISE SPECIFIED (CUSTOM SEND OPTIONS AVAILABLE) PARAMETER SYMBOL TEST CONDITIONS MINJTYP | MAX JUNITS SCHEMAT ] C Droin-source V(BR)DSS VGS=0V 500 _ _ Vv Breakdown Volt. (D=250 pA TERMINAL CONNECTIONS ; G H Gol foge ne! |VGS(TH){VDS=VGS 1D=250 HA [2.0] - [4.0] V <a 1 | GATE 1] ORAIN Gate Source IGSS |VGS=4+20 V -~ | [100] nA t? | sane S = Zero Gate VDS=MAX.RATING voS=0| - | [250] HA OU Voltage Drain | IDSS |vpS=0.8 MAX.RATING 10001 yA STANDARD BEND JAA Current VGS=O- TU=125C 7] ys CONF IGURAT IONS Static Drain (on)| VoS=10_V isla ource On-State|RDS(ON ~ - ~ JDA Resistonce(1)} ID=2.5A Forward Trans- VOS 2 SO V - Conductance (2) gf's 1tOS=2.5A 2.7) - S(U) Input Capacitance] CISS - [610] - pF "G" 3 Output Copaocitonce| COSS Vos OV oe 28 Vv - |S1] - pF R T f ae - 12 Copacitance | CRSS 18 pF Turn-On Detay |td(on)|ypp=250v RG=l20 - | - | 17 | 1s Rise Time tr 1D=4.5A ese a _ - 23 ns Turn-Off Deloyfidtoff)| ire essentially ingepen-| - | - | 53] 8 nae 3 Fall Time fT dent of operating temp.) [_ _ 23 | ns D . LJ 1 2 Tota} Gote Charge 3 {Gate Source Plus| Qg _ - 32 | nC 12 Gote-Drain VGS=10V, 1D=4.5A (CUSTOM BEND OPTIONS AVAILABLE) pate Source fags toe crate ie cusenti-| 7 | 7 [4-8] ac STANDARD BEND Gote-Drain ally independent of the CONFIGURATIONS JAB | | Gmitiers) Ded |orersting temperoture) | | _ 147 | nc Charge SQURCE-DRAIN OFODE RATINGS & CHARACT .Te = 25C ( UNLESS OTHER- WISE SPECIFIED PARAMETER SYMBOL| TEST CONDITIONS MIN.| TYP.[MAX. JUNITS Continuous ic. Modified MOSFET Source Current] 1S . - | - [4.5] A ; symbol showing the (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)} - | - | 16] A Diode) (1) Diode Forword IF24.5A VGS=0V _ ~ Voltage (2) VSD Tc=+25C 1.6] V Reverse = - - Recovery Time | rr |Tc=tes C 760] ns Reverse Re- IF=4 SA covery Charge Orr |di/dt=100A/ hS - |2.0) - HC A24 REV. 10/93 25C te 150C. 2) Pulse test: 2 TJ = 3) Repetitive Rating: Pulse Width <30008S, Duty Cycle <2z. Pulse Width timited By Max.junction Temperoture.