AO3409
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.4 -1.9 -2.4 V
I
D(ON)
-20 A
77 110
T
J
=125°C 100 140
125 180 mΩ
g
FS
5 S
V
SD
-0.8 -1 V
I
S
-1.5 A
C
iss
197 240 pF
C
oss
42 pF
C
rss
26 37 pF
R
g
3.5 7.2 11.0 Ω
Q
g
(10V) 4.3 5.2 nC
Q
g
(4.5V) 2.2 3 nC
Q
gs
0.7 nC
Q
gd
1.1 nC
t
D(on)
7.5 ns
t
r
4.1 ns
t
D(off)
11.8 ns
t
f
3.8 ns
t
rr
11.3 14 ns
Q
rr
4.4 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
I
F
=-2.6A, dI/dt=100A/µs
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Time
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current V
DS
=V
GS
I
D
=-250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
mΩ
Forward Transconductance
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, I
D
=-2.6A
Reverse Transfer Capacitance
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2.6A
V
GS
=-4.5V, I
D
=-2A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-2.6A
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-15V, R
L
=5.8Ω,
R
GEN
=3Ω
Total Gate Charge
Body Diode Reverse Recovery Charge I
F
=-2.6A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: November 2010 www.aosmd.com Page 2 of 5