the <> BAY 86 - BAY 87 - BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Normgehause Dimensions in mm KATHODE 226 0,55 Case Ti CATHODE 51A 2 DIN 41880 i JEDEC DO 7 ra Gewicht - Weight 2s 72 26 max. 0,29 Absolute Grenzdaten BAY 86 BAY87 BAY88 Absolute maximum ratings Periodische Spitzensperrspannung UpRRM 60 120 350 Vv Repetitive peak reverse voltage Sperrspannung Up 50 100 300 Vv Reverse voltage StoBdurchlaBstrom Surge forward current ty =10ms I FSM 4 A Periodischer DurchlaBspitzenstrom TERM 800 mA Repetitive peak forward current DurchlaBstrom Ir 250 mA Forward current DurchlaBstrom, Mittelwert Average forward current UR=0 Tray 250 mA Verlustleistung Power dissipation 7= 5mm, tL <= 45C Py 250 mw 12 28mm, t, = konstant Py 210 mW constant Sperrschichttemperatur tj 150 C Junction temperature Lagerungstemperaturbereich stg 55...+150 C Storage temperature range B 2/V.4.17/0474 105BAY 86 - BAY 87 - BAY 88 Warmewiderstand Thermal resistance Sperrschicht-Umgebung Junction ambient t_ = konstant, / = 5mm constant = ungektrzt unbridged KenngrBen Characteristics = 25C, falls nicht anders angegeben unless otherwise specified DurchlaBspannung Forward voltage Ip = 100mA Sperrstrom Reverse current Up = 50V BAY 86 Up = 100V BAY 87 Up = 300V BAY 88 y= 100C Up = 50V BAY 86 Up = 100V BAY 87 UR = 300V BAY 88 Diodenkapazitat Diode capacitance UR = 10V, f= 0,5 MHz Rickwartserhoizeit Reverse recovery time Te = Ip = 10mA, in = 1imA, RX, = 100Q *) AQL = 0,65% 106 Rina Rthua Typ. 0,82 21 13 Max. 420 500 100 100 100 10 15 20 2,5 C/W C/W nA nA nA pA HA pF psBAY 86 - BAY 87 - BAY 88 74344 Thk ' #, = 100C 100 nA 10 3 pF Streugrenzen Scattering limits 2 1 0 Oo; 10V 107