SDD165 Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type SDD165N08 SDD165N12 SDD165N14 SDD165N16 SDD165N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 300 165 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 4700 5000 4100 4300 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 110000 104000 84000 77000 A2s -40...+150 150 -40...+125 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws o C 3000 3600 V~ 2.25-2.75/20-25 4.5-5.5/40-48 Nm/lb.in. 120 g SDD165 Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 20 mA VF IF=300A; TVJ=25 C 1.3 V VTO For power-loss calculations only 0.8 V TVJ=TVJM 1.3 m o 550 uC 235 A rT QS TVJ=125 C; IF=300A; -di/dt=50A/us IRM RthJC per diode; DC current per module 0.21 0.105 K/W RthJK per diode; DC current per module 0.31 0.155 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD165 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD165 SDD165 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD165 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.210 0.223 0.233 0.260 0.295 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.001 0.065 0.4 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.31 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.0087 0.0163 0.185 0.1 0.001 0.065 0.4 1.29