LITE-ON SEMICONDUCTOR GBU8005 thru GBU810 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 8.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBU FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique The plastic material has UL flammability classification 94V-0 UL Recognition File # E95060 A G C H I B P - MECHANICAL DATA J ~ ~ + K Polarity : Symbols molded on body Weight : 0.15 ounces, 4.0 grams Mounting position : Any N O N N N D L E M F GBU DIM. MIN. MAX. A 21.80 22.30 B 18.30 18.80 C 3.30 3.56 D 17.50 18.00 E 0.76 1.00 0.46 0.56 F 7.40 7.90 G 3.50 4.10 H 1.65 I 2.16 2.25 2.75 J 1.95 2.35 K L 1.02 1.27 4.83 M 5.33 7.0 TYPICAL N 3.2 x 45 O P 1.90 RADIUS All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward (with heatsink Note 2) Rectified Current @TC=100 C (without heatsink) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) VRRM VRMS VDC GBU 8005 50 35 50 GBU 801 100 70 100 I(AV) GBU 802 200 140 200 GBU 804 400 280 400 8.0 3.2 GBU 806 600 420 600 GBU 808 800 560 800 GBU 810 1000 700 1000 UNIT V V V A IFSM 200 A Maximum forward Voltage at 4.0A DC VF 1.0 V Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 500 uA @TJ =25 C @TJ =125 C 2 2 2 I t Rating for fusing (t < 8.3ms) I t 166 AS Typical Junction Capacitance per element (Note 1) CJ 60 pF R0JC 2.2 C/W TJ -55 to +150 C TSTG -55 to +150 Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink. C REV. 2, 01-Dec-2000, KBDJ03 RATING AND CHARACTERISTIC CURVES GBU8005 thru GBU810 WITH HEATSINK 8.0 6.0 WITHOUT HEATSINK 4.0 2.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 20 40 60 80 100 120 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10.0 200 150 100 50 Single Half-Sine-Wave (JEDEC METHOD) 0 140 1 2 5 CASE TEMPERATURE , C 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 10 10 TJ = 25 C 1.0 PULSE WIDTH 300us TJ = 25 C, f = 1MHz 1 0.1 1.0 100 10 4 0.2 0 REVERSE VOLTAGE , VOLTS 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT ,(uA) CAPACITANCE , (pF) 20 10 NUMBER OF CYCLES AT 60Hz TJ = 125 C 100 TJ = 100 C 10 TJ = 50 C 1.0 TJ = 25 C 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) REV. 2, 01-Dec-2000, KBDJ03