FZT853
Document Number DS33175 Rev. 6 - 2
1 of 7
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March 2017
© Diodes Incorporated
FZT853
100V NPN MEDIUM POWER TRANSISTOR IN SOT223
Features
BVCEO > 100V
IC = 6A High Continuous Collector Current
ICM = 10A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 150mV @ 2A
RCE(SAT) = 50m for a Low Equivalent On-Resistance
hFE Specified up to 10A for a High Gain Hold-Up
Complementary PNP Type: FZT953
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
FZT853TA
FZT853
7
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
Top View
Device Symbol
Top View
Pin-Out
Green
C
E
B
FZT 853 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5 = 2015)
WW or WW = Week Code (0153)
YWW
FZT
853
SOT223
e3
FZT853
Document Number DS33175 Rev. 6 - 2
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FZT853
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
6
A
Peak Pulse Current
ICM
10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
3.0
24
W
mW/°C
(Note 6)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
42
°C/W
(Note 6)
RθJA
78
Thermal Resistance Junction to Lead
(Note 7)
RθJL
8.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT853
Document Number DS33175 Rev. 6 - 2
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FZT853
Thermal Characteristics and Derating Information
100m 110 100
10m
100m
1
10
Single Pulse Tamb=25°C
52mmX52mm
Single sided 2oz Cu
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
IC Collector Current (A)
VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25mmX25mm
Single sided 1oz Cu
52mmX52mm
Single sided 2oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40 52mmX52mm
Single sided 2oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse Tamb=25°C
52mmX52mm
Single sided 2oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
FZT853
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FZT853
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
200
300
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCER
200
300
V
IC = 1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
100
120
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.1
V
IE = 100µA
Collector Cut-Off Current
ICBO
<1
10
1
nA
µA
VCB = 150V
VCB = 150V, TA = +100°C
Collector Cut-Off Current
ICER
<1
10
1
nA
µA
VCE = 150V, RB 1kΩ
VCE = 150V, TA = +100°C
Emitter Cut-Off Current
IEBO
<1
10
nA
VEB = 6V
DC Current Gain (Note 9)
hFE
100
200
IC = 10mA, VCE = 2V
100
200
300
IC = 2A, VCE = 2V
50
100
IC = 4A, VCE = 2V
20
30
IC = 10A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 9)
VCE(SAT)
14
50
mV
IC = 100mA, IB = 5mA
100
150
IC = 2A, IB = 100mA
250
340
IC = 5A, IB = 500mA
Base-Emitter Saturation Voltage (Note 9)
VBE(SAT)
1,050
1,250
mV
IC = 5A, IB = 500mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(ON)
900
1,100
mV
IC = 5A, VCE = 2V
Current Gain-Bandwidth Product (Note 9)
fT
130
MHz
IC = 100mA, VCE = 10V,
f = 50MHz
Output Capacitance
COBO
35
pF
VCB = 10V, f = 1MHz
Switching Times
tON
50
ns
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
tOFF
1,650
Note: 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle ≤ 2%.
FZT853
Document Number DS33175 Rev. 6 - 2
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FZT853
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 110
1m
10m
100m
100m 110
0.0
0.1
0.2
0.3
0.4
0.5
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100m 110
0.4
0.6
0.8
1.0
1m 10m 100m 110
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
40
80
120
160
200
240
280
IC/IB=20
VCE(SAT) v IC
Tamb=25°C
IC/IB=100
IC/IB=50
IC/IB=10
VCE(SAT) (V)
IC Collector Current (A)
100°C
VBE(SAT) v IC
IC/IB=50
150°C
25°C
-55°C
VCE(SAT) (V)
IC Collector Current (A)
100°C
hFE v IC
VCE=2V
-55°C
25°C
150°C
Normalised Gain
IC Collector Current (A)
150°C
VCE(SAT) v IC
IC/IB=50
100°C
25°C
-55°C
VBE(SAT) (V)
IC Collector Current (A)
100°C
VBE(ON) v IC
VCE=2V
150°C
25°C
-55°C
VBE(ON) (V)
IC Collector Current (A)
Typical Gain (hFE)
FZT853
Document Number DS33175 Rev. 6 - 2
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March 2017
© Diodes Incorporated
FZT853
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
A1
A
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
FZT853
Document Number DS33175 Rev. 6 - 2
7 of 7
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March 2017
© Diodes Incorporated
FZT853
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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