NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS RDS(on) = 120 m Applications * * * * Power Supplies Converters Power Motor Controls Bridge Circuits N-Channel D MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 60 Vdc Drain-to-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc VGS 15 20 Vdc Vpk Rating Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) G S 4 Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 s) Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance -Junction to Ambient (Note 1) -Junction to Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds ID ID 3.0 1.4 9.0 Apk PD 2.1 1.3 0.014 Watts Watts W/C TJ, Tstg -55 to 175 C EAS 74 mJ RJA RJA 72.3 114 TL 260 IDM 1 MARKING DIAGRAM SOT-223 CASE 318E STYLE 3 Adc 2 3 3055L L WW 3055L LWW = Device Code = Location Code = Work Week PIN ASSIGNMENT 4 Drain C/W 1 C 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 0.0995 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 in2). Gate 2 3 Drain Source ORDERING INFORMATION Device Package Shipping NTF3055L108T1 SOT-223 1000/Tape & Reel NTF3055L108T3 SOT-223 4000/Tape & Reel NTF3055L108T3LF SOT-223 4000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 1 1 Publication Order Number: NTF3055L108/D NTF3055L108 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 - 68 68 - - - - - - 1.0 10 - - 100 1.0 - 1.68 4.6 2.0 - - 92 120 - 0.290 0.250 0.43 - gfs - 5.7 - Mhos Ciss - 313 440 pF Coss - 112 160 Crss - 40 60 td(on) - 11 25 tr - 35 70 td(off) - 22 45 tf - 27 60 QT - 7.6 15 Q1 - 1.4 - Q2 - 4.0 - - - 0.87 0.72 1.0 - trr - 35 - ta - 21 - tb - 14 - QRR - 0.044 - OFF CHARACTERISTICS V(BR)DSS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current Vdc Adc IDSS (VGS = 15 Vdc, VDS = 0 Vdc) IGSS mV/C nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 1.5 Adc) RDS(on) Static Drain-to-Source On-Resistance (Note 3) (VGS = 5.0 Vdc, ID = 3.0 Adc) (VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc) Vdc mV/C m Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 V, V f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 5.0 5 0 Vdc, Vdc RG = 9.1 ) (Note 3) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 3.0 3 0 Adc, Ad VGS = 5.0 Vdc) (Note 3) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3) Reverse Recovery Time (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns C NTF3055L108 6 6 5 VDS > = 10 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 3.4 V VGS = 3.5 V VGS = 4.5 V 4 3 VGS = 6 V 2 VGS = 10 V VGS = 3.2 V VGS = 3 V VGS = 2.8 V 1 VGS = 2.5 V 1 0.5 2 1.5 2.5 TJ = 100C 2 TJ = 25C 1 3 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.16 VGS = 5 V TJ = 100C 0.14 0.12 TJ = 25C 0.1 0.08 TJ = -55C 0.06 0.04 0 1 3 2 5 4 6 5 0.16 VGS = 10 V 0.14 TJ = 100C 0.12 0.1 TJ = 25C 0.08 0.06 TJ = -55C 0.04 0.02 0 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10000 2 1.8 VGS = 0 V ID = 1.5 A VGS = 5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE () 3 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4 TJ = -55C 0 0.02 5 1.6 1.4 1.2 1 TJ = 150C 1000 100 TJ = 100C 10 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 60 C, CAPACITANCE (pF) VGS = 0 V VDS = 0 V 1000 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTF3055L108 TJ = 25C Ciss 800 600 Crss Ciss 400 Coss 200 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Q1 Q2 3 2 1 ID = 3 A TJ = 25C 0 0 1 2 3 4 5 7 6 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 8 3.2 IS, SOURCE CURRENT (AMPS) t, TIME (ns) VGS 4 Qg, TOTAL GATE CHARGE (nC) VDS = 30 V ID = 3 A VGS = 5 V 100 tr tf td(off) 10 td(on) 1 10 100 VGS = 0 V TJ = 25C 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current VGS = 15 V SINGLE PULSE TC = 25C 10 10 ms 1 dc 1 ms 0.1 0.01 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 100 s 1 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE () 100 ID, DRAIN CURRENT (AMPS) QT 5 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1000 1 6 80 ID = 7 A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTF3055L108 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE (NORMALIZED) 10 1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTF3055L108 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K http://onsemi.com 6 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NTF3055L108 Notes http://onsemi.com 7 NTF3055L108 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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