Publication Order Number:
NTF3055L108/D
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 1 1
NTF3055L108
Preferred Device
Power MOSFET
3.0 Amps, 60 Volts, Logic Level
N–Channel SOT–223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
•Power Supplies
•Converters
•Power Motor Controls
•Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage VDSS 60 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms) VGS ±15
±20 Vdc
Vpk
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
3.0
1.4
9.0
Adc
Apk
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD2.1
1.3
0.014
Watts
Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg –55 to
175 °C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
EAS 74 mJ
Thermal Resistance
–Junction to Ambient (Note 1)
–Junction to Ambient (Note 2) RθJA
RθJA 72.3
114
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds TL260 °C
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 0.0995 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2–2.4 oz. (Cu. Area 0.272 in2).
D
G
S
123
4
3.0 AMPERES
60 VOLTS
RDS(on) = 120 m
N–Channel
Device Package Shipping
ORDERING INFORMATION
NTF3055L108T1 SOT–223 1000/Tape & Reel
SOT–223
CASE 318E
STYLE 3
http://onsemi.com
LWW
MARKING
DIAGRAM
3055L
3055L = Device Code
L = Location Code
WW = Work Week
PIN ASSIGNMENT
321
4
Gate Drain Source
Drain
NTF3055L108T3 SOT–223 4000/Tape & Reel
NTF3055L108T3LF SOT–223 4000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
NTF3055L108
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS 60
–68
68 –
–
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS –
––
–1.0
10
µAdc
Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
–1.68
4.6 2.0
–
Vdc
mV/°C
Static Drain–to–Source On–Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.5 Adc) RDS(on) – 92 120 mΩ
Static Drain–to–Source On–Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 3.0 Adc)
(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)
VDS(on) – 0.290
0.250 0.43
–
Vdc
Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 3.0 Adc) gfs – 5.7 – Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0V
Ciss – 313 440 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz
)
Coss –112 160
Transfer Capacitance
f
=
1
.
0
MHz)
Crss – 40 60
SWITCHING CHARACTERISTICS (Note 4)
Turn–On Delay Time td(on) –11 25 ns
Rise Time (VDD = 30 Vdc, ID = 3.0 Adc,
VGS =50Vdc
tr– 35 70
Turn–Off Delay Time VGS = 5.0 Vdc,
RG = 9.1 Ω) (Note 3) td(off) – 22 45
Fall Time
RG
9.1
Ω)
(Note
3)
tf– 27 60
Gate Charge
(V 48 Vd I 30Ad
QT– 7.6 15 nC
(VDS = 48 Vdc, ID = 3.0 Adc,
V
GS
= 5.0 Vdc
)
(
Note 3
)
Q1– 1.4 –
VGS
=
5
.
0
Vdc)
(Note
3)
Q2– 4.0 –
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
VSD –
–0.87
0.72 1.0
–
Vdc
Reverse Recovery Time trr – 35 – ns
(IS = 3.0 Adc, VGS = 0 Vdc, ta– 21 –
(IS
3
.
0
Adc
,
VGS
0
Vdc
,
dIS/dt = 100 A/µs) (Note 3) tb– 14 –
Reverse Recovery Stored Charge QRR – 0.044 – µC
3. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.
4. Switching characteristics are independent of operating junction temperatures.
NTF3055L108
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3
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance vs. Gate–to–Source
Voltage Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
Figure 5. On–Resistance Variation with
Temperature Figure 6. Drain–to–Source Leakage Current
vs. Voltage
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
TJ = 100°C
TJ = –55°C
0
0.16
0.14
0.12
0.1
0.08
0.02 146
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
VGS = 10 V
2
1.8
1.6
1.4
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
–50 50250–25 75 125100
ID = 1.5 A
VGS = 5 V
0.8
0.6 150 1
10
1000
10000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
IDSS, LEAKAGE (nA)
04060302010 50
100
53
0
2
5
321
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
00.5
6
VGS = 5 V
VGS = 2.5 V
VGS = 6 V
VGS = 10 V
VGS = 3 V
4
1
1.5 2.5 15241.5 2.5 3 3.5 4.5
0.06
0.04
2
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.2
3
2
5
0
6
4
1
3
0
0.16
0.14
0.12
0.1
0.08
0.02 14653
0.06
0.04
2
1
175
VGS = 2.8 V
VGS = 3.2 V
VGS = 3.4 V
VGS = 3.5 V
VGS = 4.5 V
TJ = 150°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = –55°C
TJ = 25°C
TJ = 100°C
TJ = –55°C
VDS > = 10 V
VGS = 0 V
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4
10 10 155020525
RDS(on) LIMIT
VGS
100
10
1
0.01
1000
10
1
6
5
4
3
2
1
0
60
20
10
0
3.2
2.8
2.4
2
0
1000
800
600
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
C, CAPACITANCE (pF)
400
200
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (Ω)
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID, DRAIN CURRENT (AMPS)
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
057
6
428
1 10 100 0.54 0.7 0.820.660.62 0.860.58
0.1 10 1001 25 125 15010075 17550
ID = 3 A
TJ = 25°C
VGS
VGS = 0 V
VDS = 0 V TJ = 25°C
Crss
Ciss
Coss
Crss
1.6
1.2
0.74 0.78
Ciss
VGS = 15 V
SINGLE PULSE
TC = 25°C
VDS = 30 V
ID = 3 A
VGS = 5 V
VGS = 0 V
TJ = 25°C
ID = 7 A
1 ms
100 µs
10 ms
dc
tr
td(off)
td(on)
VDS
0.9
0.1
30
40
50
Q2
Q1
QT
70
80
031
100
0.8
0.4
tf
THERMAL LIMIT
PACKAGE LIMIT
NTF3055L108
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5
10
1
0.001 1001010.10.001 1000
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
RESISTANCE (NORMALIZED)
t, TIME (s)
1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4)
Figure 13. Thermal Response
0.1
0.01
0.010.00010.00001
NTF3055L108
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6
PACKAGE DIMENSIONS
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
H
S
F
A
B
D
G
L
4
123
0.08 (0003)
C
MK
J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
NTF3055L108
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Notes
NTF3055L108
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8
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NTF3055L108/D
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