2N5179 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5179 type is a silicon NPN RF transistor, manufactured by the epitaxial planar process, designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 20 12 V Emitter-Base Voltage VEBO IC 2.5 V 50 mA PD PD TJ, Tstg 200 mW 300 mW -65 to +200 C Thermal Resistance JC 0.58 C/mW Thermal Resistance JA 0.87 C/mW MAX 20 UNITS nA 1.0 A Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=15V ICBO VCB=15V, TA=150C UNITS V BVCBO IC=1.0A 20 V BVCEO IC=3.0mA 12 V BVEBO IE=10A 2.5 V VCE(SAT) VBE(SAT) IC=10mA, IB=1.0mA 0.4 V IC=10mA, IB=1.0mA 1.0 V hFE VCE=1.0V, VCE=6.0V, hfe fT Cob Po Gpe NF rb'Cc IC=3.0mA 25 250 IC=2.0mA, f=1.0kHz VCE=6.0V, IC=5.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 25 300 900 2000 VCB=10V, IE=12mA, f=500MHz VCE=6.0V, IC=5.0mA, f=200MHz VCE=6.0V, IC=1.5mA, f=200MHz, RS=50 VCB=6.0V, IC=2.0mA, f=31.9MHz 1.0 MHz pF 20 mW 15 dB 3.0 4.5 dB 14 ps R1 (8-May 2013) 2N5179 SILICON NPN RF TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R1 (8-May 2013) w w w. c e n t r a l s e m i . c o m