MMS9018
Features
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.2Watts(Tamb=25OC) of Power Dissipation.
Collector-current 0.05A
Collector-base Voltage 25V
Operating and storage junction temperature range: -55OC to +150OC
Marking : J8
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 25 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 18 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 4.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=15Vdc, IB=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=3.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=1.0mAdc, VCE=5.0Vdc) 70 190 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc, IB=1.0mAdc) --- 1.4 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=5.0mAdc, VCE=5.0Vdc, f=400MHz) 600 --- MHz
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
A
B
C
D
E
G
H
J
.079
2.000
inches
mm
.031
.800
.900
.037
.950
.037
.950
K
F
Revision: 3 2006/05/13
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MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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Revision: 3 2006/05/13
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Micro Commercial Components
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products are represented on our website, harmless against all damages.
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