IRFZ46NSPbF
IRFZ46NLPbF
HEXFET® Power MOSFET
lAdvanced Process Technology
lSurface Mount (IRFZ46NS)
lLow-profile through-hole (IRFZ46NL)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V37 A
IDM Pulsed Drain Current  180
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current28 A
EAR Repetitive Avalanche Energy11 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.0165Ω
ID = 53A
2
D Pak
TO-262
S
D
G
04/22/04
www.irf.com 1
PD - 95158
IRFZ46NS/LPbF
2www.irf.com
Starting TJ = 25°C, L = 389µH
RG = 25Ω, IAS = 28A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs 
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID =1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– .0165 ΩVGS =10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 28A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 72 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
trRise Time ––– 76 ––– ID = 28A
td(off) Turn-Off Delay Time ––– 52 ––– RG = 12Ω
tfFall Time ––– 57 ––– RD = 0.98Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 1696 ––– VGS = 0V
Coss Output Capacitance ––– 407 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz, See Fig. 5
E AS Single Pulse Avalanche Energy ––– 583152IAS = 28A, L = 389mH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
53
180
S
D
G
IRFZ46NS/LPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20
µ
s PULSE W IDTH
T = 25°C
C
A
4.5V
1
10
100
1000
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20
µ
s PULSE WIDTH
T = 175°C
C
A
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(N orm alized)
V = 10V
GS
A
I = 46A
D
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Volta
e
(
V
)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE W IDTH
DS
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
TJ = 25°C TJ = 175°C
IRFZ46NS/LPbF
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
4
8
12
16
20
0 102030405060
Q , Total Gate Char
g
e
(
nC
)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 28A
D
DS
DS
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Volta
g
e
(
V
)
DS
I , Drain Current (A)
OPE RATION IN THIS AR EA LIM ITE D
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Sin
g
le P u ls e
C
J
0
400
800
1200
1600
2000
2400
2800
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Volta
g
e
(
V
)
A
V = 0V , f = 1MH z
C = C + C , C SHORTE D
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
IRFZ46NS/LPbF
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
ID, Drain Current (A)
Limited By Packa
g
e
IRFZ46NS/LPbF
6www.irf.com
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
DS
L
D.U.T.
V
DD
I
AS
t
p
0.01Ω
R
G
+
-
tp
VDS
IAS
VDD
V(BR)DSS
10 V
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
QG
QGS QGD
VG
Charge
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Startin
g
T , Junction Tem
p
erature
(
°C
)
V = 25V
I
TOP 11A
20A
BOTTOM 28A
DD
D
IRFZ46NS/LPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFZ46NS/LPbF
8www.irf.com
D2Pak Part Marking Information (Lead-Free)
D2Pak Package Outline
Note: "P " in as s embly line
pos ition i ndicates "L ead-F ree"
F530S
T HIS IS AN IR F 530S WIT H
LOT CODE 8024
ASS E MB LE D ON WW 02, 2000
IN T H E AS S E MB L Y LINE "L"
AS S E MB L Y
LOT CODE
INT E R NAT IONAL
RECTIFIER
LOGO
PAR T NUMBER
DAT E CODE
YE AR 0 = 2000
WEE K 02
LINE L
OR
F530S
A = ASSEMBLY SITE CODE
WEEK 02
P = D E S IGN AT E S L E AD -F R E E
PRODUCT (OPTIONAL)
RECTIFIER
INT E RNAT IONAL
LOGO
LOT CODE
ASSEMBLY
YE AR 0 = 2000
DATE CODE
PART NUMBER
IRFZ46NS/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
AS S E MB L Y
LOT CODE
RECTIFIER
IN T E R NAT IONAL
AS S E MB LE D ON WW 19, 1997
Note: "P" in as s embly line
pos ition indi cates "L ead-F ree"
IN T H E AS S E MB L Y L INE "C" LOGO
T H IS IS AN IRL 3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WE E K 19
YE AR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
AS S E MB L Y
IN T E R NAT IONAL
RECTIF IER
PRODUCT (OPTIONAL)
P = DE S IGNAT E S LE AD-F R E E
A = AS S E MB L Y S IT E CODE
WE E K 19
YE AR 7 = 1997
DATE CODE
OR
IRFZ46NS/LPbF
10 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/04
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90
(
.429
)
10.70
(
.421
)
16.10
(
.63 4
)
15.90
(
.62 6
)
1.75
(
.0 69
)
1.25
(
.0 49
)
11.60
(
.45 7
)
11.40
(
.44 9
)
15.42
(
.60 9
)
15.22
(
.60 1
)
4.72
(
.136
)
4.52
(
.178
)
24.30
(
.95 7
)
23.90
(
.94 1
)
0.368
(
.01 45
)
0.342
(
.01 35
)
1.60
(
.06 3
)
1.50
(
.05 9
)
13.50
(
.532
)
12.80
(
.504
)
330.00
(
14.173
)
MAX.
27.40
(
1.079
)
23.90
(
.941
)
60.00
(
2.362
)
MIN.
30.40
(
1.197
)
MAX.
26.40
(
1.039
)
24.40
(
.961
)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/