POWER MOS FETs (2) SANYO The Sanyo J-MOS series utilizes Sanyos own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and LD Series offer the most suitable devices to meet specific needs. In addition to the above we have Small-signal MOS FETs. ats AP Series (Advanced Performance ) VDSS 100V system (4:PD value at Tc=25T) RDS (on): VGS=10V Absolute Maximum Ratings Electrical Characteristics/Ta=25U Type No. Package /Ta=25T Type No. Yoss| Yess} 'b | 'op | * Po] Yescorey | oscony | CEFB (V)|__(V)}_ CA) | CAD | HD (Vv) typ/max (2)| (PF) 28K1427 10 40 40 0.120. 16 750] 2SK1427 28K1428 TO-220 20 80 60 750 / 100m 1200|2S8K1428 28K1429 30} 120 70 400/550 2400] 2SK1429 28K1430 10 40 25 0. 12/0. 16 750 | 28K1430 28K1431 TO-220ML 15 60 30 750/ 100m 1200} 2SK1431 28K1432 100 | +20 25} 100 40 1.5~2.5 400 55m 2400} 2SK1432 28K1433 TO-3PB 30} 120}; 100 40n/55m 2400 | 2SK1433 28K1434 60| 240} 150 23m / 35m 4800 | 2SK1434 2SK1435 TO-3PML 30] 120 60 40m 55m 2400 | 2SK1435 2SK1436 50| 200 80 23m/ 35m 4800 | 2SK1436 28K1437 TO-3PBL 70| 280] 200 16n/ 26m 7200 | 2SK1437 VDSS 2ZBOOV, 2@5>0V system (2SJ] type:P channel (-) sign is omitted. ) 25K2160 7 28 25 0.350. 45 550] 2SK2160 2SK2161 TO-220ML| 200 | +20 9 36 25 1,.5~2.5 0. 25,0. 35 700| 2SK2161 28K2378 13 52 30 0. 16/0. 21 1100} 2SK2378 28K2379 20 80 40 70m / 95m 2400 | 2SK2379 28J282 3 12 50 1.572 600] 2SJ282 2SK1921 T0-220 4 16 50 0.5/0.7 600] 28K1921 28K2142 12 48 70 0. 25/0. 35 1250] 2SK2142 28J30 3 12 25 1.5/2 600} 28J306 28J307 6 24 30 0. 75/1 1250] 28J307 281308 9 36 40 0.3870. 48 2700 34308 28J32 4 16 25 _ 141.3 750|28j320 25K2010 TO-220ML) 250 | 430/qy746| a5] 1:5~2.5 570.7 600| 2SK2010 28K2031 12 48 30 0. 25,0, 35 1250] 28K2011 2SK2012 18 72 40 0. 12/0. 16 2700] 28K2012 2SK2108 6 24 25 0.38/0.5 750 | 2SK2108 2S8K2321 SMP 12 48 70 0. 25/0. 35 1250] 2SK2321 2SK2058 TO-3PB 25} 100} 120 0.1270. 16 2700 | 2SK2058 VDSS 450V system 25K14238 0.3] 1.2 20 9/12 90 | 2SK1438 28K1429 3 12} 50 2/2.6 400 | 2SK1439 2SK1440 TO-220 5 20 60 141.4 700|2SK1440 2SK1441 8 32 70 0.6/0.8 1200 |2SK1441 2SK1442 12 48 70 0. 470.6 1600 |2SK1442 28K1443LS 1 4 20 3.54.5 250] 2SK1443LS 2SK1444LS 3 12 25 2.0/2.6 400 | 2SK1444LS 2SK1445LS|TO-220F I (LS 5 20 30 141.4 700) 2SK1445LS 2SK1446LS 7 28 35 0.6/0.8 1200] 2SK1446LS 2SK1447L$ 450 | +30 9 36 40 2~3 0. 47/0. 6 1600|2SK1447LS 2SK160 SMP 3 12 50 2/2.6 400} 2SK1690 2SK16%1 5 20 60 141.4 700} 2SK1691 28K1448 8 32} 100 0.6/0.8 1200] 2S8K1448 28K1449 TO-3PB 12 48) 120 0. 47/0. 6 1600} 2SK1449 28K1450 20 80} 150 0. 240.3 3200| 2SK1450 28K1451 8 32 50 0.6/0.8 1200 | 2SK1451 2SK1452 TO-3PML 10 40 60 0. 470.6 1600| 2SK1452 28K1453 16 64 70 0. 24/0. 3 3200] 2SK1453 28K1454 TO-3PBL 30| 120{ 250 0.120. 16 6400| 2SK1454 VDSS GOOV system 29K1922 2 8] 50 3.2/4.3 400] 2SK1922 28K1923 T0-220 4 16 60 1.8/2.4 700] 2SK1923 28K1924 6 24 70 1.1/1.5 1100] 2SK1924 2SK2043LS 600} +30 2 8 25] 2 ~ 3 3.2/4.3 400] 2SK2043 2SK2044LS | TO-220F I (LS 4 16 30 1.8/2.4 700] 28K2044 2SK2045LS 5.5 22 35 1.1/1.5 1100] 2SK2045 2SK1925 TO-3PB 8 32] 120 0.9/1.2 1500|2SK1925 | Precaution Take care to prevent device breakage from static electricity because MOSFETs For samples and shipment contact our Product Planning Dept. cannot withstand much static electricity, of TR division, These specifications are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Business Headquarters, TR Division. 77 See other pages. Case Outlines (unit:mm) SANYO: TO-3PML D:Drain G:Gate S:Source [P1604 is | SANYO: SMP(straight type) 2.9, .5 oO V1.9 42:7 | o oe 261 4 5-13 11.5 }__! SANYO: SMP(FD forming) 10.2 1L 2 o N O = 1.2 oO - = age 5 s 0.46 ote 2.55 2.55 SANYO: TO-3PBL 20.0 Next page MT940108TR