SKiiP 2013GB173-4DL
by SEMIKRON 030606 B 7 − 19
I. Power section
Absolute maximum ratin
g
sTs = 25°C unless otherwise specified
Symbol Conditions Values Units
IGBT
VCES 1700 V
VCC 1) Operating DC link voltage 1200 V
VGES ± 20 V
ICTs = 25 (70) °C 2000 (1500) A
Invers e diode
IF = -ICTs = 25 (70) ° C 1500 (1120) A
IFSM Tj = 150 °C, tp = 10m s; sin 17280 A
I2t (Diode) Diode, Tj = 150 °C, 10ms 1493 kA2s
Tj , (Tstg) -40...+150 (125) °C
Visol rms, AC, 1min 4000 V
IAC-terminal per AC terminal, rms, Ts =
70°C, Tterminal <115°C 400 A
Characteristics Ts = 25 °C un less othe rwise spe cified
Symbol Conditions min. typ. max. Units
IGBT
VCEsat IC = 1200A, Tj = 25 (125)°C;
measured at terminal −1,9 (2,2) 2,4 V
VCEO Tj = 25 (125) °C; at terminal −1,0 (0,9) 1,2 (1,1) V
rCE Tj = 25 (125) °C; at terminal −0,8 (1,0) 1,0 (1,3) mΩ
ICES VGE=0,VCE=VCES,T
j
=25(125) °C −4,8 (288) −mA
IC=1200A, Vcc=900V −968 −mJ
Eon + Eoff T
j
=125°C Vcc=1200V −1428 −mJ
LCE top, bottom −3−nH
CCHC per phase , AC side −6,8 −nF
RCC´-EE´ terminal- chip, Tj=25 °C −0,13 −mΩ
Invers e diode
VF = VEC IF= 1200A; Tj = 25(125) °C
measured at terminal −1,6 (1,5) 2,0 V
VTO Tj = 25 (125) °C −1,1 (0,8) 1,3 (1,0) V
rTTj = 25 (125) °C −0,4 (0,6) 0,6 (0,8) mΩ
IC=1200A Vcc=900V −172 −mJ
ERR Tj=125°C Vcc=1200V −204 −mJ
Mechanical data
Mdc DC terminals, SI Units 6 −8Nm
Mac AC terminals, SI Units 13 −15 Nm
wSKiiP 3 System w/o heat sink −3,1 −kg
w heat si nk −9,7 −kg
Thermal characteristics (PX16 heat sink wi th fa n SKF16B- 230-1); "s" referen ce
to heat sink; "r" referen ce to built-in t emperature sensor (acc. IEC 6074 7-15)
RthjsIGBT per IGBT −−
0,015 °C/W
Rthjsdiode per dio de −−
0,029 °C/W
Zth Ri (mK/W) (max. values) taui(s)
1234 1 2 3 4
IGBTjr 5,6 6,0 6,4 0,0 363,0 0,18 0,04 1,0
diodejr 10,0 8,4 14,8 14,8 50,0 5,0 0,25 0,04
heatsinkra 3,1 17,3 3,7 0,9 230 78 13,0 0,4
SKiiP
3
SK integrated intelligent
Power
2-pack
SKiiP 2013GB173-4DL
Preliminary data
Case S43
Features
• SKiiP technology inside
• Trench IGBTs
• CAL HD diod e techn ology
• integrated current sensor
• integrated temperature sensor
• integrated heat sink
• IEC 60721-3-3 (humidity) class
3K3/IE 32 (SKiiP 3 System)
• IEC 68T.1 (climate) 40/ 125/56
(SKiiP 3 power se ction)
• UL recognized File no. E63532
(SKiiP 3 power se ction)
1) with assembl y of suitable MKP
capacitor per terminal
(SEMIKRO N type is
recommended)
8) AC connection busbars must
be connected by the user;
copper bus bar s avai labl e on
request
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expr esse d or implied is made regarding deliver y, performance or suitability.
SKiiP 2013GB173-4DL
B 7 − 20 030606 by SEMIKRON
SKiiP 3
SK integrated intelligent
Power
SKiiP 2013GB173-4DL
Preliminary data
II. Integrated gate driver
Absolute maximum ratings
Symbol Term Value Unit
VS2 unstabilized 24V power supply 30 V
ViH input signal voltage (high) 15 + 0,3 V
dv/dt secondary to primary side 75 kV/µs
VisolIO input / output (A C, rms, 2 s) 4000 V
VisolPD partial di schar ge extinction voltage,
rms, QPD ≤ 10 pC; 1500 V
Visol12 output 1 / output 2 ( A C, rms, 2s) 1500 V
f switching frequency 6 kHz
Top (Tstg) operating / stora ge temperature - 40 ... + 85 °C
Electrical characteristics (Ta = 25 °C) Values
Symbol Term min typ max.Units
VS2 supply voltage non stabilized 13 24 27 V
IS2 VS2 = 24V 324 + 45*f / kHz + 0,00011 * (IAC/A)2mA
ViT+ input t hreshold voltage (High) 11,2 – – V
ViT- input t hreshold voltage (Low) – – 5,4 V
Rin input r esistance – 10 – kΩ
Cin input c apacitance – 1 – nF
td(on)IO input- output turn-on propagation t ime – 1,1 – µs
td(off)IO input-output turn-off prop agation time – 1,1 – µs
tpERRRESET error memory reset time – 9 – µs
tTD top/bottom switch: interlock time – 3,3 – µs
IanalogOUT max . 5mA ; 8 V corresponds to – 2000 – A
IS1out 15 V sup ply voltage for external
compo nents; max l oad current ––50mA
ITRIPSC over current trip level ( Ianalo
g
OUT = 10V) – 2500 – A
Ttp over temperature prot ection 110 – 120 °C
UDCTRIP UDC-protection ( Uanalog OUT = 9V)
(option for GB types)
not
imple
mente
d
––V
For ele ctrical and thermal design support ple ase use SE MISEL. Access to SEMISE L is via SEMI KRON website
http://www.semikron.com.
Gate dri ver features
• CMOS compatible inputs
• wide range power supply
• integrated circuitry to sense
phase current, heat si nk
temperature and DC-bus voltage
(option)
• short circuit prot ection
• over c urrent pr otection
• over v oltage protect ion (option)
• power supply protected agai nst
under voltage
• interlock of top/bottom switch
• isolation by transformers
• fibre op tic int erfa ce (option for
GB-types only)
• IEC 68T.1 (climate) 40/85/56
(SKiiP 3 gate driver )
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expr esse d or implied is made regarding deliver y, performance or suitability.
