Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3096
Issue 3
IRFF230
2N6798
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
FEATURES
•V
(BR)DSS = 200V
•I
D = 5.5A
•R
DSON = 0.40ΩΩ
VDS Drain–Source Voltage
VGS Gate–Source Voltage
IDDrain Current Continuous TCase = 25°C
TCase = 100°C
IDM Drain Current Pulsed
PDTotal Device Dissipation @ TCase = 25°C
TCase = 100°C
TJ, TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
TLMaximum Lead Temperature 1.6mm from Case for
10 secs.
200V
±20V
5.5A
3.5A
22A
25W
10W
–55 to +150°C
5.0°C/W
175°C/W
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE (TO-205AF)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Source
Underside View
PIN 2 – Gate PIN 3 – Drain
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
1
2
3
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain–Source Breakdown Voltage
VGS(th) Gate Thresshold Voltage
IGSS Gate–Body Leakage
IDSS Zero Gate Voltage Drain Current
rDS(on) Drain–Source On–Resistance1
gfsForward Transconductance1
Ciss Input Capacitance
Coss Output capacitance
Crss Reverse Transfer Capacitance
tdon Turn–On Delay Time
trRiseTime
td(of) Turn off Delay Time
tfFallTime
VSD Diode Forward Voltage1
ISContinues Current
ISM Pulsed Current2
trr Reverse Recovery Time
Qrr Reverse Recovered Charge
VGS = 0 ID= 1mA
VDS=VGS ID= 250μA
VDS = 0 VGS = ±20V
VDS =0.8 x V(BR)DSS
VGS = 0 Tj = 125°C
VGS = 10V ID= 3.5A
VDS = 15V ID= 3.5A
VDS = 25V VGS = 0
f = 1.0MHZ
VDD = 77V RL = 22Ω
ID= 3.5A VGEN = 10V
RG = 7.5 ohms
IF= 5.5A VGS = 0
IF= 5.5A VDD = 50V
dIF/DT = 100A/μS
200
2.0 4.0
±100
25
250
0.25 0.4
2.5 3.0
600
250
80
830
42 50
12 50
30 40
1.4
5.5
22
150 500
6
V
nA
μA
Ω
s( )
pF
ns
V
A
ns
μC
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3096
Issue 3
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Ω
IRFF230
2N6798
