BCP56-16TRL13 - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 Apr 08 2001 Oct 10

DISCRETE SEMICONDUCTORS

BCP54; BCP55; BCP56

NPN medium power transistors

ook, halfpage

M3D087

2001 Oct 10 2

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

FEATURES

•High current (max. 1 A)

•Low voltage (max. 80 V).

APPLICATIONS

•Switching.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic

package. PNP complements: BCP51, BCP52 and BCP53.

PINNING

PIN DESCRIPTION

1 base

2, 4 collector

3 emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

123

MAM287

Top view

2, 4

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BCP54 −45 V

BCP55 −60 V

BCP56 −100 V

VCEO collector-emitter voltage open base

BCP54 −45 V

BCP55 −60 V

BCP56 −80 V

VEBO emitter-base voltage open collector −5V

Ccollector current (DC) −1A

CM peak collector current −1.5 A

IBM peak base current −0.2 A

Ptot total power dissipation Tamb ≤25 °C; note 1 −1.33 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2001 Oct 10 3

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

THERMAL CHARACTERISTICS

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 94 K/W

Rth j-s thermal resistance from junction to soldering point 13 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =30V −−100 nA

IE= 0; VCB =30V; T

j= 125 °C−−10 µA

IEBO emitter cut-off current IC= 0; VEB =5V −−100 nA

hFE DC current gain IC= 5 mA; VCE =2V 63 −−

= 150 mA; VCE =2V 63 −250

IC= 500 mA; VCE =2V 40 −−

FE DC current gain IC= 150 mA; VCE =2V −

BCP55-10; 56-10 63 −160

BCP54-16; 55-16; 56-16 100 −250

VCEsat collector-emitter saturation voltage IC= 0.5 A; IB=50mA −−500 mV

VBE base-emitter voltage IC= 0.5 A; VCE =2V −−1V

Ttransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz −130 −MHz

DC current gain ratio of the

complementary pairs IC= 150 mA; VCE=2V −−1.6

hFE1

hFE2

-----------

2001 Oct 10 4

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2001 Oct 10 5

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 Oct 10 6

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

NOTES

2001 Oct 10 7

Philips Semiconductors Product speciﬁcation

NPN medium power transistors BCP54; BCP55; BCP56

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Contact information

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Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08742