DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors Product specification Supersedes data of 1999 Apr 08 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING * High current (max. 1 A) PIN * Low voltage (max. 80 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter * Switching. DESCRIPTION 4 handbook, halfpage 2, 4 NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. 1 3 1 2 3 Top view Fig.1 MAM287 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCP54 - 45 V BCP55 - 60 V BCP56 - 100 V BCP54 - 45 V BCP55 - 60 V BCP56 - 80 V collector-emitter voltage open base VEBO emitter-base voltage - 5 V IC collector current (DC) - 1 A ICM peak collector current - 1.5 A IBM peak base current Ptot total power dissipation Tstg open collector - 0.2 A - 1.33 W storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". 2001 Oct 10 2 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE note 1 UNIT 94 K/W 13 K/W Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 30 V - - 100 nA IE = 0; VCB = 30 V; Tj = 125 C - - 10 A nA IEBO emitter cut-off current IC = 0; VEB = 5 V - - 100 hFE DC current gain IC = 5 mA; VCE = 2 V 63 - - IC = 150 mA; VCE = 2 V 63 - 250 IC = 500 mA; VCE = 2 V 40 - - hFE DC current gain - IC = 150 mA; VCE = 2 V BCP55-10; 56-10 63 - 160 100 - 250 VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA - - 500 mV VBE base-emitter voltage IC = 0.5 A; VCE = 2 V - - 1 V MHz BCP54-16; 55-16; 56-16 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz - 130 - h FE1 ----------h FE2 DC current gain ratio of the complementary pairs IC = 150 mA; VCE = 2 V - - 1.6 2001 Oct 10 3 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2001 Oct 10 REFERENCES IEC JEDEC EIAJ SC-73 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Oct 10 5 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 NOTES 2001 Oct 10 6 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 NOTES 2001 Oct 10 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA73 (c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08742