DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 17
DISCRETE SEMICONDUCTORS
BAV23
General purpose double diode
b
ook, halfpage
M3D070
1996 Sep 17 2
Philips Semiconductors Product specification
General purpose double diode BAV23
FEATURES
•Small plastic SMD package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage:
max. 200 V
•Repetitive peak reverse voltage:
max. 250 V
•Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•General purpose where high
breakdown voltages are required.
DESCRIPTION
The BAV23 consists of two general
purpose diodes fabricated in planar
technology, and encapsulated in the
small plastic SMD SOT143 package.
The diodes are not connected.
PINNING
PIN DESCRIPTION
1 cathode (k1)
2 cathode (k2)
3 anode (a2)
4 anode (a1)
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: L30.
handbook, halfpage
43
21
Top view
MAM059
2
3
4
1
1996 Sep 17 3
Philips Semiconductors Product specification
General purpose double diode BAV23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −250 V
VRRM repetitive peak reverse voltage series connection 500 V
VRcontinuous reverse voltage −200 V
VRcontinuous reverse voltage series connection −400 V
IFcontinuous forward current single diode loaded; see Fig.2;
note 1 −225 mA
double diode loaded; see Fig.2;
note 1 −125 mA
IFRM repetitive peak forward current −625 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−9A
t = 100 µs−3A
t = 10 ms −1.7 A
Ptot total power dissipation Tamb =25°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
1996 Sep 17 4
Philips Semiconductors Product specification
General purpose double diode BAV23
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF= 100 mA −1.0 V
IF= 200 mA −1.25 V
VFforward voltage series connection; see Fig.3
IF= 100 mA −2.0 V
IF= 200 mA −2.5 V
IRreverse current see Fig.5
VR= 200 V −100 nA
VR= 200 V; Tj= 150 °C−100 µA
IRreverse current series connection −
VR= 400 V −100 nA
VR= 400 V; Tj= 150 °C−100 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 −5pF
series connection; f = 1 MHz;
VR= 0; see Fig.6 −2.5 pF
trr reverse recovery time when switched from IF= 30 mA to
IR= 30 mA; RL= 100 Ω;
measured at IR= 3 mA; see Fig.7
−50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
1996 Sep 17 5
Philips Semiconductors Product specification
General purpose double diode BAV23
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG703
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1996 Sep 17 6
Philips Semiconductors Product specification
General purpose double diode BAV23
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
102
10
200
0
MBG381
100 Tj (oC)
IR
(µA)
1
10 2
10 1
(1) (2)
(1) VR= 200 V; maximum values.
(2) VR= 200 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
04862
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 3 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
1996 Sep 17 7
Philips Semiconductors Product specification
General purpose double diode BAV23
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.8 SOT143.
Dimensions in mm.
handbook, full pagewidth
MBC845
10
max
o
10
max
o
30
max
o
1.1
max
0.75
0.60
0.150
0.090
0.1
max
43
2
M0.1 AB
0
0.1
0.48
TOP VIEW
1.4
1.2 2.5
max
3.0
2.8
M
0.2 AB
A
B
1.9
1
0
0.1
0.88
1.7
