$GYDQFHG 3RZHU 026)(7 IRFW/IZ44A FEATURES BVDSS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS(on) = 0.024 Lower Input Capacitance Improved Gate Charge ID = 50 A Extended Safe Operating Area 175C Operating Temperature D2-PAK Lower Leakage Current: 10A (Max.) @ VDS = 60V Lower RDS(ON): 0.020 (Typ.) I2-PAK 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Drain-to-Source Voltage 60 Continuous Drain Current (TC=25C) 50 Continuous Drain Current (TC=100C) 35.4 Units V A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (2) 857 mJ A A 200 (1) IAR Avalanche Current (1) 50 EAR Repetitive Avalanche Energy (1) 12.6 mJ dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns Total Power Dissipation (TA=25C) * 3.8 W Total Power Dissipation (TC=25C) 126 W Linear Derating Factor 0.84 W/C PD TJ , TSTG TL Operating Junction and - 55 to +175 Storage Temperature Range C Maximum Lead Temp. for Soldering 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RJC Characteristic Typ. Max. Junction-to-Case -- 1.19 RJA Junction-to-Ambient * -- 40 RJA Junction-to-Ambient -- 62.5 Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B (c)1999 Fairchild Semiconductor Corporation 1&+$11(/ 32:(5 026)(7 IRFW/IZ44A Electrical Characteristics (TC=25C unless otherwise specified) Characteristic Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage 60 -- -- BV/TJ Breakdown Voltage Temp. Coeff. -- 0.063 -- VGS(th) IGSS IDSS RDS(on) Gate Threshold Voltage 2.0 -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- -- 100 -- -- 0.024 -- gfs Forward Transconductance -- 32.6 Ciss Input Capacitance -- 1770 2300 Coss Output Capacitance -- 590 680 Crss Reverse Transfer Capacitance -- 220 255 td(on) Turn-On Delay Time -- 20 40 Rise Time -- 16 40 Turn-Off Delay Time -- 68 140 Fall Time -- 70 140 Qg Total Gate Charge -- 64 83 Qgs Gate-Source Charge -- 12.3 -- Qgd Gate-Drain ( Miller ) Charge -- 23.6 -- tr td(off) tf V Test Condition VGS=0V,ID=250A V/C ID=250A V nA A Symbol pF See Fig 7 VDS=5V,ID=250A VGS=20V VGS=-20V VDS=60V VDS=48V,TC=150C VGS=10V,ID=25A (4) VDS=30V,ID=25A (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=30V,ID=50A, ns RG=9.1 See Fig 13 (4) (5) VDS=48V,VGS=10V, nC ID=50A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 50 ISM Pulsed-Source Current (1) -- -- 200 VSD Diode Forward Voltage (4) -- -- 1.8 V TJ=25C,IS=50A,VGS=0V trr Reverse Recovery Time -- 85 -- ns TJ=25C,IF=50A Qrr Reverse Recovery Charge -- 0.24 -- C diF/dt=100A/s A Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.4mH, IAS=50A, VDD=25V, RG=27, Starting TJ =25C (3) ISD 50A, di/dt 350A/s, VDD BV DSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature Integral reverse pn-diode in the MOSFET (4) 1&+$11(/ 32:(5 026)(7 IRFW/IZ44A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current [A] ID , Drain Current [A] 102 Top : 102 101 @ Notes : 1. 250 s Pulse Test 2. TC = 25 oC 100 -1 10 0 175 oC 100 @ Notes : 1. VGS = 0 V 2. VDS = 30 V 3. 250 s Pulse Test 25 oC - 55 oC 10-1 1 10 101 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 0.04 VGS = 10 V 0.03 0.02 VGS = 20 V 0.01 @ Note : TJ = 25 oC 0.00 0 102 101 @ Notes : 1. VGS = 0 V 2. 250 s Pulse Test 175 oC 25 oC 0 40 80 120 160 200 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 240 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 3500 2100 C iss C oss 1400 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 700 00 10 1 10 VDS , Drain-Source Voltage [V] 10 VGS , Gate-Source Voltage [V] Capacitance [pF] 2800 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 12 V VDS = 30 V VDS = 48 V 5 @ Notes : ID = 50.0 A 0 0 10 20 30 40 50 QG , Total Gate Charge [nC] 60 70 1&+$11(/ 32:(5 026)(7 IRFW/IZ44A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 A -50 -25 0 25 50 75 100 125 150 175 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID =25 A 0.5 -75 200 -50 -25 o 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 60 ID , Drain Current [A] Operation in This Area is Limited by R DS(on) 10 s 2 10 100 s 1 ms 10 ms 101 DC @ Notes : 1. TC = 25 oC 100 10-1 0 10 50 40 30 20 10 2. TJ = 175 oC 3. Single Pulse 101 0 25 102 50 75 100 125 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=1.19 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) 0.2 10- 1 0.1 0.05 0.02 0.01 PDM t1 single pulse t2 Z JC(t) , ID , Drain Current [A] 103 10- 2 - 5 10 10- 4 10- 3 10- 2 10- 1 t1 , Square Wave Pulse Duration 100 [sec] 101 150 175 1&+$11(/ 32:(5 026)(7 IRFW/IZ44A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50k Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time 1&+$11(/ 32:(5 026)(7 IRFW/IZ44A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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