IRFIZ44A - Fairchild Semiconductor

IRFW/IZ44A

BVDSS = 60 V

RDS(on) = 0.024Ω

ID = 50 A

60

50

35.4

200

±20

857

50

12.6

5.5

3.8

126

0.84

- 55 to +175

300

1.19

40

62.5

--

♦ Avalanche Rugged Technol ogy

♦ Rugged Gate Oxide Tec hnology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ 175°C Operating Temperature

♦ Lower Lea kage Current : 10µA (M ax.) @ VDS = 60V

♦ Lower RDS(ON): 0.020Ω (Ty p .)

$GYDQFHG 3RZHU 026)(7

Thermal Resistance

Junction-to-Case

Junction-to-Ambient

RθJC

RθJA

°C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

* When mounted on the minimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain- to-Source Vol tage

Conti nuous Drain Current (TC=25°C)

Conti nuous Drain Current (TC=100°C)

Drain Current-Pulsed (1)

Gate-t o-Sourc e Voltage

Singl e Pulsed Aval anche Energy (2)

Avalanche Current (1)

Repetitive Aval anche Energy (1)

Peak Diode Recovery dv/dt (3)

Total Power Dissipati on (TA=25°C)

Total Power Dissipati on (TC=25°C)

Linear Derating Fact or

Operating Junction and

Storage Temperature Range

Maxim um Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Characteristic Value UnitsSymbol

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

ID

TJ , TSTG

TL

A

V

mJ

A

mJ

V/ns

W

W/°C

A

°C

VDSS V

*

©1 999 Fairchild Semico nductor Corporation

Rev. B

IRFW/IZ44A

60

--

2.0

--

0.063

--

590

220

20

16

68

70

64

12.3

23.6

--

4.0

100

-100

10

100

0.024

--

2300

680

255

40

140

83

--

32.6

1770

--

85

0.24

50

200

1.8

--

Notes;

(1) Repeti tive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=0.4mH, IAS=50A, VDD=25V, RG=27Ω, Starting TJ =25°C

(3) ISD ≤ 50A, di/ dt ≤ 350A/µs, VDD ≤ BVDSS , Starti ng TJ =25°C

(4) Pulse Test: Pulse Wi dth = 250µs, Duty Cycle ≤ 2%

(5) Essential ly Independent of Operating Temperature

1&+$11(/

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Electrical Characteristics (TC=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Fo rward

Gate-Source Leakage , Rev erse

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

Static Drai n-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Char ge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

BVDSS

∆BV/∆TJ

VGS(th)

RDS(on)

IGSS

IDSS

V

V/°C

V

nA

µA

Ω

pF

ns

nC

--

VGS=0V,ID=250µA

ID=250µA

See Fig 7

VDS=5V,ID=250µA

VGS=20V

VGS=-20V

VDS=60V

VDS=48V,TC=150°C

VGS=10V,ID= 25A (4)

VDS=30V,ID=25A (4)

VDD=30V,ID=50A,

RG=9.1Ω

See Fig 13

(4) (5)

VDS=48V,VGS=10V,

ID=50A

See Fig 6 & Fig 12

(4) (5)

Drain- to-Source Leakage Current

VGS=0V,VDS=25V,f =1M Hz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current (1)

Diode Forwar d Volta ge (4)

Reverse Recovery Time

Reverse Recovery Charge

IS

ISM

VSD

trr

Qrr

CharacteristicSymbol Max. UnitsTyp.M in. Test Condition

--

A

V

ns

µC

Integral reverse pn-diode

in the MOSFET

TJ=25°C,IS=50A,VGS=0V

TJ=25°C,IF=50A

diF/dt=100A/µs (4)

IRFW/IZ44A

10-1 100101

100

101

102

@ Notes :

1. 250

µs Pulse Test

2. TC = 25 oC

VGS

Top : 1 5 V

1 0 V

8 .0 V

7.0 V

6 .0 V

5.5 V

5.0 V

Bottom : 4.5 V

ID

, Drain Current [A]

V

DS , Drain-Source Voltage [V]

0 40 80 120 160 200 240

0.00

0.01

0.02

0.03

0.04

@ Note : TJ = 25 oC

V

GS = 20 V

V

GS = 10 V

RDS(on) , [ Ω]

Drain-Source On-Resistance

I

D

, Drain Current [A] 0.40.60.81.01.21.41.61.82.02.22.42.62.83.0

100

101

102

175 oC

25

oC

@ Notes :

1. VGS = 0 V

2. 250

µ

s Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

100101

0

700

1400

2100

2800

3500C

iss= Cgs+ Cgd ( C

ds= shorted

)

C

oss= Cds+ Cgd

C

rss= Cgd

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

C rss

C oss

C iss

Capacitance [pF]

VDS , Drain-Source Voltage [V] 0 10203040506070

0

5

10

V

DS = 48 V

V

DS = 30 V

V

DS = 12 V

@ Notes : ID = 50.0 A

VGS , Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

246810

10-1

100

101

102

25

oC

175 oC

- 55 oC

@ Notes :

1. VGS = 0 V

2. VDS = 30 V

3. 250 µs Pulse Test

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

1&+$11(/

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Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drai n-Sour ce Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On- Resistan ce vs. Drain Curr ent

IRFW/IZ44A

-75 -50 -25 0 25 50 75 100 125 150 175 200

0.8

0.9

1.0

1.1

1.2

@ Notes :

1. VGS = 0 V

2. ID = 250 µA

BVDSS , (Normalized)

Drain-Source Breakdown Voltage

TJ

, Junction Temperature [o

C] -75-50-25 0 25 50 75 100125150175200

0.5

1.0

1.5

2.0

2.5

@ Notes :

1. VGS = 10 V

2. ID =25 A

RDS(on) , (Normalized)

Drain-Source On-Resistance

TJ

, Junction Temperature [o

C]

100101102

10-1

100

101

102

103

10 µs

DC

100

µs

1 ms

10 ms

@ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

Operation in This Area

is Limited by R DS(on)

ID , Drain Current [A]

VDS , Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

single pulse

0.2

0.1

0.01

0.02

0.05

D=0.5

@ Notes :

1. ZθJC(t)=1.19 oC/W Max.

2. Duty Factor, D=t1/t2

3. TJM-TC=PDM*ZθJC(t)

ZθJC

(t) , Thermal Response

t1 , Square Wave Pulse Durat ion [sec]

25 50 75 100125150175

0

10

20

30

40

50

60

ID , Drain Current [A]

T

c

, Case Temperature [o

C]

1&+$11(/

32:(5 026)(7

Fig 7. Break down Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

Fig 11. T hermal Response

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

PDM

t1t2

IRFW/IZ44A

1&+$11(/

32:(5 026)(7

Fig 12. Gate Charge Test Circuit & Waveform

Fig 13. Resistive Switching Test Circuit & Wavef orms

Fig 14. Unclamped In ductive Switc hing Test Circuit & Waveforms

EAS =L

L IAS2

----

2

1--------------------

BVDSS -- VDD

BVDSS

Vin

Vout

10%

90%

td(on) tr

t on t off

td(off) tf

Charge

VGS

10V

Qg

Qgs Qgd

Vary t

p

to obtain

required peak ID

10V

VDD

C

LL

VDS

ID

RG

t p

DUT

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

VDD

( 0.5 rated VDS )

10V

Vout

Vin

RL

DUT

RG

3mA

VGS

Current Sampl ing (IG)

Resistor Curren t Sa mpl ing (ID)

Resistor

DUT

VDS

300nF

50kΩ

200nF

12V

Same Type

as DUT

Current Regulator

R1R2

IRFW/IZ44A

1&+$11(/

32:(5 026)(7

Fig 15. Peak Di ode Recovery dv/dt T est Circuit & Waveforms

DUT

VDS

+

--

L

I S

Driver

VGS

RGSame Type

as DUT

VGS dv/dt controlled by RG

IS control led by Duty Factor D

VDD

10V

VGS

( Driver )

I S

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

Vf

IFM , Body D iode Forw ard Cur ren t

Body Diode Reverse Current

IRM

Body Diode R ecovery dv/dt

di/dt

D = Gate P ul se Width

Gate Pulse Period

--------------------------

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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MICROWIRE™

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failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

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user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

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