\ SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS T0-98 PACKAGE Device 2N4256 2N4424 2N4425 2N5172 2N5174 2N5232 2N5232A 2N5249 2N5249A 2N5305 2N5306 2N5307 2N5308 2N5309 2N5310 2N5311 2N5354 2N5355 2N5356 2N5365 2N5366 2N5418 2N5419 2N5420 2N6076 Di6G6 D29E1 D29E2 D29E4 D29E5 D29E6 D29E9 D29E10 D33D21 D33D22 033024 033025 D33D 26 D33D29 D33D30 bmn ; : BVcEO @10mA (Vv) 40 40 40 25 75 50 50 50 50 25 40 50 50 50 Nee Vce(sat) Min.-Max. @ Ic, Voge (V) |(V) Max. @ lo, Ip Toe ee 7 : 0.125 | 10mA, 1.0mA aa | 0.3 5OmA, 3mA as 0.3 50mA, 3mA | 0.25 | 10mA, 1mA : 0.95 10mA, 1.0mMA a 0.125 | 10mA, 1mA a 0.125 | 10mA, 1mA ; : 0.125 | 10mA, 1mA : : 0.125 | 10mA, 1mA . a i 1.4 }200mA, 0.2mA | 1.4 200mA, 0.2mA | 1.4 200mA, 0.2mA 1.4 200mA, 0.2mA : 0.125 | 10mA, 1mA i 0.125 10mA, 1mA IC 0.125 | 10mA, 1mA : 20 0.25 5OmA, 2.5mA : : 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA i 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA ] 0.25 50mA, 2.5mA 0.25 50mA, 2.5mA | 0.25 50mA, 2.5mA : 0 0.25 10mA, 1.0mA : a 0.6 10mA, 1.0mA 0.75 |500mA, 50mA 0.75 |500mA, 50mA | 0.75 |500mA, 50mA C 0.75 |S00mA, 50mA | Bi : ' 0.75 |500mA, 50mA ' . 500mA, 50mA 0.75 |500mA, 50mA : ; 0.75 |500mA, 50mA i ) 0.75 |500mA, 50mA : 0.75 500mA, 50mA |] 0.75 |500mA, 50mA : 21 0.75 500mA, 50mA | : 0.75 |500mA, 50mA : - 0.75 |500mA, 50mA . 102 fr Cp @10V Typical (MHz) Py @ 25C (mW) 1 MHz Typical (Pf) gqaagqd NNN BeaBAEB NNNNN VN aad OprahSilicon Transistors i i |__2N5249,A The General Electric 2N5249 and 2N5249A are NPN silicon, planar, epitaxial, passivated transistors designed especially for low noise preamplifier and small signal industrial amplifier applications. The units feature low collector satura- tion voltage, tight beta control and excellent low noise characteristics. The 2N5249A includes a noise figure specification. absolute maximum ratings: (25C) untess otherwise specified) Voltages Collector to Emitter Vero 50 Emitter to Base Veno 5 Collector to Base Vero 70 Current Collector (Steady State) * Ic 100 Dissipation Total Power (Free Air at 25C)+ Py 860 Total Power (Free Air at 55C) + Pr 260 Temperature Storage Tate 55 to +150C Operating Ty +125C Lead Soldering, 46 + %42 from case for 10 seconds maximum Th +260C *Determined from power limitations due to saturation voltages at this current. +Derate 3.8 mW/C increase in ambient temperature above 25C. electrical characteristics: (25C) cuntess otherwise specified) Static Characteristics Collector Cutoff Current (Vos 50V) Iczo (Vea = 50V, Ta = 100C) Tcro Collector Cutoff Current (Vos = 50V) Tors Emitter Cutoff Current (Vis == 5V) Taso Forward Current Transfer Ratio (Vcxu = 5V, Ic = 2 mA) hre (Vc = 5V, Ic = 100 nA) hre Collector Emitter Breakdown Voltage (Ic = 10 mA) Veaswceoff Collector Base Breakdown Voltage (Ic = 10 uA) Vismcso Emitter Base Breakdown Voltage (Is == 10 nA) Vsreno Collector Saturation Voltage (Ic = 10 mA, Is = 1 mA) Vercoanfl Base Saturation Voltage (Ic 10 mA, Is = 1 mA) Varco Base Emitter Voltage (Vcx = 10V, Io = 2 mA) Vee Dynamic Characteristics Forward Current Transfer Ratio (Vce = 5V, Ic = 2mA,f=1kHz) hee Output Capacitance, Common Base (Vcs = 10V, In = 0, f = 1 MHz) Cer Noise Figure (Ip = 100 vA, Vex = 5V, Rg = 5 kO, f= 1kHz, BW = 15.7 kHz) (2N5249A only) NF tTypically, a minimum of 95% of the distribution is above this value. {Pulse conditions: 300 usec. duration, 2% duty cycle. 476 <<< A 5 mW Min. 400 50 70 0.5 400 ALL DIMEN. NICHES ANO ARE REFERENCE UNLESS TOLERANCED TO-98 Typ. Max. 30 nA 10 vA 30 nA 50 nA 800 300t Volts Volts Volts .125 Volts 78 Volts 0.9 Volts 1200 4.0 pF 3 dBCobo -COLLECTOR-BASE CAPACITANCE - pF Iego-COLLECTOR CUTOFF CURRENT-nA 100 10.0 Input and Output Capacitance vs. Bias Voltage Veg~ VOLTAGE EMITTER TO BASE-VOLTS Vop -VOLTAGE COLLECTOR TO BASE-VOLTS Ino vs. Ambient Temperature Ta -AMBIENT TEMPERATURE-*C bee FORWARD CURRENT TRANSFER RATIO 3 Cabo" EMITTER-BASE CAPACITANCE- pF h,..; vs. Ambient Temperature [ | VcE =5.0V, I=10mA D o 9 2 2 N 9 9 r hee NORMALIZED TO 25C VALUE > 0.3 0.2 65 +35 5 25 55 85 us (48 Ta-AMBIENT TEMPERATURE -C Forward Current Transfer Ratio vs. Collector Current 000 ' TTT Veg * 5.0V Ta=looc \ 900 Pa \ yf \ 800 A 700 Ta 125C soo | A oe MN "| Y La > | aa \ Ln 500 A a4 Ee 400 | a 300 Ta =-55C 200: od PA Laon Leeann NN | nasontannnyny 100 oor Or 1.0 10 00 471 Ig-COLLECTOR GURRENTmA