LL4148 Switching Diode Features * Silicon epitaxial planar diode * Fast switching * Ideal for automatic insertion Mechanical Data * * * * Case:MiniMELF (SOD-80) Weight: approx.0.05g Plating thickness: 4um to 12um Plating material: Pure tin(99.99%) (in mm) Package: Mini-MELF (SOD-80) Absolute Maximum Ratings (TA=25C unless otherwise specified) Parameter Symbol Limit Reverse voltage VR 75 Peak reverse voltage VRM 100 Forward DC current at Tamb=25oC (1) IF 200 Average rectified current half wave rectification IF(AV) 150 with resistive load at Tamb=25oC f50 Hz (1) Surge forward current at t<1s and Tj=25oC IFSM 500 Power dissipation at Tamb=25oC (1) Ptot 500 Thermal resistance junction to ambient air (2) RJA 350 Thermal resistance junction to tie-point RJtp 300 Operation Junction temperature Topr 175 Storage temperature range TS -65 to +175 Note: 1.Valid provided that electrodes are kept at ambient temperature Unit Volts Volts mA mA mA mW o C/W o C/W o C o C 2.Device mounted on FR4 printed-circuit board Electrical Characteristics (TA=25C unless otherwise specified) Parameter Forward voltage Leakage current Symbol VF IR Capacitance Voltage rise when switching ON (tested with 50mA forward pulses) Reverse recovery time Ctot Vfr Rectification efficiency V trr Test Condition IF=10mA VR=20V VR=75V VR=20V,TJ=150OC VF=VR=0V, f=1MHz tp=0.1us, Rise time<30ns fp=5 to 100kHz IF=10mA, IR=1mA VR=6V, RL=100 f=100MHz, VRF=2V 1/3 Min. - Typ. - Max. 1.0 25 5.0 50 4.0 2.5 Unit Volt nA uA uA pF Volts - - 4.0 ns 0.45 - - - LL4148 Switching Diode Typical Characteristic Curves 2/3 LL4148 Switching Diode Typical Characteristic Curves www.goodarksemi.com 3/3 Doc.USLL4148xGD2.0