Parameter Symbol Limit Unit
Reverse voltage VR 75 Volts
Peak reverse voltage VRM 100 Volts
Forward DC current at Tamb=25oC (1) IF 200 mA
Average rectified current half wave rectification
with resistive load at Tamb=25oC f≥50 Hz (1)
IF(AV) 150 mA
Surge forward current at t<1s and Tj=25oC IFSM 500 mA
Power dissipation at Tamb=25oC (1) Ptot 500 mW
Thermal resistance junction to ambient air (2) RΘJA 350 oC/W
Thermal resistance junction to tie-point RΘJtp 300 oC/W
Operation Junction temperature Topr 175 oC
Storage temperature range TS -65 to +175 oC
Note: 1.Valid provided that electrodes are kept at ambient temperature
2.Device mounted on FR4 printed-circuit board
Parameter Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF=10mA - - 1.0 Volt
Leakage current IR VR=20V
VR=75V
VR=20V,TJ=150OC
-
-
-
-
-
-
25
5.0
50
nA
uA
uA
Capacitance Ctot VF=VR=0V, f=1MHz - - 4.0 pF
Voltage rise when switching ON
(tested with 50mA forward
pulses)
Vfr tp=0.1us, Rise
time<30ns
fp=5 to 100kHz
- - 2.5 Volts
Reverse recovery time trr IF=10mA, IR=1mA
VR=6V, RL=100Ω
- - 4.0 ns
Rectification efficiency ηV f=100MHz, VRF=2V 0.45 - - -
LL4148
Switching Diode
Package: Mini-MELF (SOD-80)
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• Silicon epitaxial planar diode
• Fast switching
• Ideal for automatic insertion
Mechanical Data
• Case:MiniMELF (SOD-80)
• Weight: approx.0.05g
• Plating thickness: 4um to 12um
• Plating material: Pure tin(99.99%)
Features
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Electrical Characteristics (TA=25°C unless otherwise specified)
(in mm)
LL4148
Switching Diode
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Typical Characteristic Curves
LL4148
Switching Diode
www.goodarksemi.com
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Doc.USLL4148xGD2.0
Typical Characteristic Curves
