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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2016
FFA40UP35S — Ultrafast Diode
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
www.fairchildsemi.com1
FFA40UP35S
40 A, 350 V Ultrafast Diode
Features
• Ultrafast Recovery, trr < 55 ns (@ IF = 40 A)
• Max. Forward Voltage, VF =1.6 V(Tc = 25oC)
• Reverse Voltage: VRRM = 350 V
• Avalanche Energy Rated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Free-Wheeling Diode for Motor Application
• Power Switching Circuits, Welder, UPS
Description
The FFA40UP35S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use
as freewheeling and clamping diodes in a variety of switching
power supplies and other power swithching applications. It is
specially suited for use in switching power supplies and industrial
applicationa as welder and UPS application.
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Unit
VRRM Peak Repetitive Reverse Voltage 350 V
VRWM Working Peak Reverse Voltage 350 V
VRDC Blocking Voltage 350 V
IF(AV) Average Rectified Forward Current @ TC = 125oC 40 A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 300 A
TJ, TSTG Operating and Storage Temperature Range -65 to +175 oC
Symbol Parameter Ratings Unit
RθJC Maximum Thermal Resistance, Junction to Case 0.8 oC/W
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FFA40UP35STU F40UP35S TO-3P Tube N/A N/A 30
1. Anode 2. Cathode 3. Anode
1
2
3
1. Anode 2. Cathode 3. Anode
TO-3PN
123
FFA40UP35S — Ultrafast Diode
www.fairchildsemi.com2
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Unit
VF1IF = 40 A
IF = 40 A
TC = 25oC
TC = 125oC
-
-
-
-
1.6
1.5 V
IR1VR = 350 V
VR = 350 V
TC = 25oC
TC = 125oC
-
-
-
-
100
500 μA
trr IF = 1 A, diF/dt = 100 A/μs, VR = 30 V
IF = 40 A, diF/dt = 200 A/μs, VR = 230 V TC = 25oC-
-
26
28
53
55 ns
ta
tb
Qrr
IF = 40 A, diF/dt = 200 A/μs, VR = 230V TC = 25oC
-
-
-
17
11
36
-
-
-
ns
ns
nC
WAVL Avalanche Energy ( L = 40 mH) 20 - - mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%
FFA40UP35S — Ultrafast Diode
www.fairchildsemi.com
3
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
vs. Forward Current
Figure 4. Typical Reverse Current vs.
Reverse Voltage
Figure 5.Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time
vs. diF/dt
Figure 7. Typical Reverse Recovery
Current vs. diF/dt
Figure 8. Forward Current Derating Curve
0.0 0.5 1.0 1.5 2.0
0.2
1
10
100
TC = 125oC
TC = 75oC
Forward Current, IF [A]
Forward Voltage, VF [V]
TC = 25oC
100 200 300 350
1E-3
0.01
0.1
1
10
100
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Current , IR [μA]
Reverse Voltage, VR [V]
10
0.1 1 10 100
80
160
240
320
400
480
560
Typical Capacitance
at 0V = 530 pF
Capacitances , Cj [pF]
Reverse Voltage, VR [V]
100 200 300 400 500
20
30
40
50
IF = 40A
TC = 75oC
TC = 25oC
TC = 125oC
Reverse Recovery Time, trr [μs]
di
F
/dt [A/μs]
100 200 300 400 500
2
4
6
8
10
IF = 40A
TC = 125oC
TC = 25oC
TC = 75oC
Reverse Recovery Current, Irr [A]
diF/dt [A/μs]
25 50 75 100 125 150 175
0
20
40
60
80
100
Average Forward Current, IF(AV) [A]
Case temperature, TC [oC]
FFA40UP35S — Ultrafast Diode
www.fairchildsemi.com
4
©2008 Fairchild Semiconductor Corporation
FFA40UP35S Rev. 1.8
Typical Performance Characteristics (Continued)
Figure 9. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.005
0.01
0.1
1
2
Thermal Response [ZθJC]
0.01
0.1
0.2
0.05
0.02 *Notes:
1. ZθJC(t) = 0.8oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
R
0.50
16.20
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.60
2.20
0.75
0.55
2.00
1.60
3° 4°
3°
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAWING FILE NAME:
TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
13
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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