TO-3
DIMENSIONS
INCHES MM DIM MIN MAX MIN MIN NOTE
A 1.550 REF 39.37 REF
B ----- 1.050 ----- 26.67
C .250 .335 6.35 8.51
D .038 .043 0.97 1.09
E .055 .070 1.40 1.77
G .430 BSC 10.92 BSC
H .215 BSC 5.46 BSC
K .440 .480 11.18 12.19
L .665 BSC 16.89 BSC
N ----- .830 ----- 21.08
Q .151 .165 3.84 4.19 Dia.
U 1.187 BSC 30.15 BSC
V .131 .188 3.33 4.77
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM
Collector-emitter voltage peak value VBE=0V 80 V
VCEO
Collector-emitter voltage (open base) 60 V
VEBO
Emitter-base voltage (open collector) 7V
IC
Collector current (DC) 20 A
IB
Base current(DC) 5
A
IBM
Base current peak value A
PTOT
Total power dissipation
Tmb<=25oC 150
W
Tstg Storage temperature -65 200 oC
Tj Junction temperature -65 200 oC
ELECTRICAL CHARACTERISTICS
SYSBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBO Collector-base cut-off current
VCB=100V; IE=0
5 mA
IEBO Emitter-base cut-off current
VEB=7V; IC=0 5 mA
V(BR)CEO Collector-emitter breakdown voltage IC=200mA; IB=0 60
V
VCEsat Collector-emitter saturation voltages
IC=10A; IB=1.0A 1.4 V
hFE DC current gain IC=10A; VCE=4V 15
60
fT Transition frequency at f=1MHz
IC=1.0A; VCE=4V
0.2 MHz
CC Collector capacitance at f=1MHz
VCB=10V pF
ton On times
IB1=-IB2=1A;
IC=10A; VCC=30V
1 us
ts Turn-off storage time
IB1=-IB2=1A;
IC=10A; VCC=30V
1 us
tf Fall time
IB1=-IB2=1A;
IC=10A; VCC=30V
0.5 us
2N3772
NPN
Silicon Diffused
Power Transistor
SYMBOL PARAMETER CONDITION MIN MAX UNIT
VCESM
Collector-emitter voltage peak value
VBE=0V
80 V
VCEO
Collector-emitter voltage (open base) 60 V
IC
Collector current (DC) 20 A
ICM
Collector current peak value 30 A
PTOT
Total power dissipation
Tmb<=25oC
150 W
VCEsat Collector -emitter saturation voltage IC=10A;
IB=1.0A
1.4 V
Icsat
Collector saturation current A
VBE
Emitter forward voltage
IE=10A
2.2 V
tf
Fall time IC=10A;
IB1=-IB2=1.0A;
ICC=30V 0.5 us
Note: Drawings Are Not To Scale
A
N
E
D
C
K
H
VUL
G
B
Q
1
2
PIN 1: ANODE
PIN 2: ANODE
CASE: CATHODE
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Revision: 2 2003/04/30
omponents
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