. TECCOR ELECTRONICS INC 8872819 TECCOR ELECTRONICS INC 74. DE peeecsis 0001038 4 7 73C 01038 D T-a5 -Ol PET Cn ae Plasti TO-202AB TO-218X THERMOTAB _ TO-220AB 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 TWX 910-860-5068 TELEX 79-1600 SGRs 1-70 ANPS NON-SENSITIVE GATE General Information The Teccor Electronics line of thyristor SCR semi- conductors are half-wave unidirectional gate-con- trolled rectifiers which complement Teccors fine of sensitive gate SCRs. Teccor offers devices with cur- rent ratings from 1-70 Amps and Voltage ratings from 30-600 Volts with gate sensitivities from 10-50 milli- amps. If gate currents in the 1-500 microamp ranges are required, please consult Teccors sensitive gate SCR technical data sheets. Electrically Isolated Packages Teccors SCRs are available in a choice of 8 dif- ferent device packages. Four of the 8 packages are offered in electrically isolated construction where the case or tab is internally isolated to allow the use of low cost assembly and convenient packaging techniques. The Teccor line of SCRs features glass passivated device junctions to insure long term device reliability and parameter stability. Teccors glass offers a rug- ged, reliable barrier against junction contamination. _ Features * Electrically Isolated Packages * High Voltage Capability 30-600 Volts * High Surge Capability up to 950 Amps * Glass Passivated Chip 45ECCOR ELECTRONICS INC "73 DE paavea4 0001034 & fl r-a5-o x SCRSsNon Sensitive Gate Part Number. _ _ IWDRM &1 inet ]- oer e Toone | Isolated Non-lsolated oo A | RRM |- let IDRM & IRRM im Ver == "A Maximum Repetitive oc Peak Off-State Peak On-State | OC Gate-Trigger | T On-State Peak Gate-Trigger Forward & Reverse Voltage at Voltage [], | | Current Off State Current Current @ Max Rated | YO = 12 VOC TYPE 5 (4) (2) Forward Vp = 12 VDC VORM & VRRM RMS Current RL = 609 & Reverse | RL = 600 Te = 25 (8) (13) Voltage (4 (42) (3) K wy, iitla | f G Amps mA Volts S Ic = | Tc = | Tc = Te = | Tc = 70-92 10-2088 roams | Togo Irs) | (AN) Volts mA 25C | 100C | 125C Volts 25C | 125C FOR DIMENSIONAL OUTLINES & PACKAGE VARIATIONS SEE PAGE 67 MAX | MAX MIN MIN | MAX MAXIMUM MAX MAX | MIN $031E j 4.0 | 0.64 30 1 | 0 | ot [ 02 | 05 16 | 145 [| 02 SO5TE . 1.0 | 0.84 50 1 | 10 | 01 | 02 | 05 16 | 45 | -02 1 S101E Z ; 10 | 0.64 | 100 1 | 10 | 01 | 02 | 05 1.6 15 | 02 Amp S201E 1.0 0,64 200 1 10 01 0.2 0.5 1.6 1.5 0.2 - S401E 1.0 0.64 400 1 10 01 0.2 0.5 16 45 0.2 S601E _ 1.0 | 0.64 600 i 10 | 01 0.2 0.5 1.6 15 0.2 $0301L 1.6 1.0 30 i 10 ou 0.2 0.5 16 1.5 0.2 S0507L 1.6 10 50 1 10 01 0.2 0.5 1.6 1.5 0.2 1.6 S1001L 1.6 1.0 100 1 10 01 0.2 0.5 1.6 1.5 0.2 Amps $2001L 1.6 1.0 200 i 10 1 0.2 0.5 1.6 1.5 0.2 S4001L 1.6 1.0 400 1 10 .01 0.2 0.5 1.6 1.6 0.2 S6001L 1.6 1.0 600 1 10 01 0.2 0.5 1.6 15 0.2 $0303L 3.0 18 30 1 10 01 0.2 0.5 1.6 16 0.2 $0503 . 3.0 19 50 1 10 01 02 0.5 16 15 0.2 3 $1003: ; 3.0 1.9 100 1 10 RD 0.2 0.5 16 15 0.2 Amps $2003L 3.0 13 200 1 10 01 0.2 0.5 1.6 1.5 0.2. $4003L : 3.0 19 400 1 10 A 0.2 0.5 1.6 16 0.2 $6003L 3.0 14 600 1 10 1 0.2 0.5 1.6 15 0.2 $0304F1 $0304N1 4.0 2.5 30 1 10 01 0.2 0.5 1.6 1.5 0.2 $0504F1 S0504N1 : 4.0 2.5 50 1 10 Ot 0.2 0.5 1.6 1.5 0.2 4 $1004F1 1004N1 4.0 2.5 100 1 10 01 0.2 0.5 1.6 1.5 0.2 Amps $2004F1 $2004N1 4.0 2.5 200 1 10 Of 0.2 0.5 1.6 1.5 0.2 $4004F1 S4004N1 4.0 2.5 400 1 10 01 0.2 0.5 1.6 1.5 0.2 S6004F1 S6004N1 40 2.5 600 1 10 01 0.2 0.5 1.6 1.5 0.2 80306L $0306F1 6.0 3.8 30 1 i) 1 02 0.5 16 15 0.2 SO506L SO506F1 6.0 3.8 50 1 15 1 0.2 0.5 16 15 0.2 6 S1006L S1006F1 6.0 3.8 400 1 15 01 0.2 0.5 16 15 0.2 Amps $2006L S2006F1 6.0 3.8 200 1 iH Ot 0.2 0.5 1.6 15 0.2 $4006L S4006F1 : 6.0 3.8 400 1 5 01 0.2 0.5 1.6 1.5 0,2 S6006L S6006F1 6.0 3.8 600 1 15 01 0.2 0.5 1.6 15 0.2 $0308L $0308F1 $0308R 8.0 5.1 30 1 15 OT 0.2 0.5 1.6 15 0.2 $0508L S0508F1 $0508R 8.0 5.1 50 1 15 a 0.2 0.5 1.6 1.5 0.2 $1008L $1008F1 $1008R 8.0 5.1 700 1 16 01 0.2 0.5 1.6 1.5 0.2 $2008L S2008F1 $2008R 8.0 5.1 200 1 15 01 0.2 0.5 1.6 1.5 0.2 $4008L $4008F1 $4008R 8.0 5.1 400 1 15 1 0.2 0.5 1.6 1.5 0.2 8 $6008L $6008F1 S6008R 8.0 5.1 600 1 15 01 0.2 0.5 1.6 1.5 0.2 Amps ci22F [ 8.0 | 5.4 50 2] ot | os 1.83 15 | 0.2 C122A 8.0 5.1 100 25 04 0.5 1.83 1.5 0.2 C1228 8.0 5.1 200 25 0.1 0.5 1.83 1.5 0.2 C1220 8.0 5.1 300 25 0.1 0.5 1.83 1.5 0.2 C1220 8.0 5.1 400 25 01 0.5 1.83 1.5 0.2 C122E 8.0 5.1 500 25 0.1 0.5 1.83 1.5 0.2 C122M 8.0 5.1 609 25 0.1 05 1.83 1.5 0.2 GENERAL NOTES * Storage temperature range (TS) is 65C to + 150C for T0-92 devices. 40C to + 150C Teccor's 2N6394 Series, 2N6400 Series, and 2N6504 Series devices conform to all JEDEC for TO-202 and TO-220 devices. 20C to + 125C for Fastpak and 40C to + 1259C registered data. for all others All measurements are made at 60 Hz with a resistive load at an ambient temperature of Lead solder temperature is a maximum of 230C for 10 seconds maximum; 1/16" from case. + 25C unless otherwise specified. The case temperature (TC) is measured as shown on dimensional outline drawings. See Operating temperature range (Tu) is 65C to + 125C for TO-92 devices, OC to + 125C package dimensions" section of catalog. for Fastpak, and -- 40C to + 125C for all other packages. 46TECCOR ELECTRONICS INC 73 DE earesn9 ooo1oyo 2 > 1-25-0/ Electrical Specifications > dH lam Pam | Pacav) | . TSM. | - dvdt Rt difdt tot ty oc Peak Gate Peak Gate Average Peak One Critical Rate RMS Surge Maximum Rate | Gate Controtied Circuit Holding Current Power Gate Power Cycle Surge of Applied (Non-Repetitive) of Rise of Turn-On Time Commutated Current (11) Dissipation Dissipation Forward Current Forward Voltage On-State Current On-State Gate Pulse Turn-Off Gate Open (it) (6) (10) For a Period of Current =100mA Time (5) (14) 8.3 msec for IeT = 150mA | Min. Width = Sys (9) (10) Fusing With 0.15 With Rise Amps Volts/us Rise Time. Time a O.1ps mA Amps Watts Watts Bot S02 | TC=100C /Te = 12600 Amps?sec Ampsius Bs 18 MAX MAX MAX MAX MIN MIN MAX MAX 20 15 15 0.3 30 25 40 30 3.7 50 2.0 36 20 14 15 0.3 30 25 40 30 37 50 2.0 35 20 1.5 15 0.3 30 25 40 30 "3? 50 2.0 35 20 15 :) 0,3 30 26 ~ 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 30 20 3.7 50 20 35 20 1.5 15 0.3 30 25 30 20 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 1.5 15 0.3 30 25 40 30 3.7 50 2.0 35 20 1.5 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 1 0.3 30 25 40 30 37 50 2.0 35 20 1.5 15 0.3 30 25 30 20 3.7 0 2.0 35 20 15 15 0.3 30 25 30 20 37 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 ui) 0.3 30 25 40 30 3.7 50 20 35 20 15 5 0.3 30 25 30 20 3.7 50 20 35 20 15 15 0.3 30 25 30 20 3.7 50 2.0 35 20 16 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 40 30 3.7 50 2.0 35 20 15 15 0.3 30 25 30 20 3.7 50 20 35 20 15 15 0.3 30 25 30 20 3.7 50 2.0 35 30 2.0 20 0.5 100 60 175 125 41 100 2.0 35 30 2.0 20 0.5 100 60 175 125 41 100 2.0 35 30 2.0 20 0.5 100 60 175 425 4 100 2.0 35 30 2.0 2 - 05 100 60 175 125 41 10 2.0 35 30 2.0 4 0.5 100 60 175 125 Al 100 2.0 35 30 2.0 20 0.5 100 60 150 100 41 100 20 35 30 2.0 20 0.5 100 60 175 125 41 100 2.0 35 30 2.0 20 0.5 100 60 175 125 4 100 2.0 35 30 2.0 20 0.5 100 60 175 125 41 100 2.0 35 30 2.0 20 0.5 100 60 175 125 4 10 2.0 35 30 2.0 20 0.5 100 60 115 126 41 100 2.0 35 30 2.0 20 0.5 100 60 150 100 41 100 2.0 35 30 2.0 5 0.5 90 82 34 108 30 2.0 5 0.5 90 82 34 100 30 2.0 5 0.5 90 82 34 400. 30 2.0 5 0.5 90 82 34 10 0 2.0 5 0.5 90 82 34 10 30 2.0 5 0.5 90 82 34 100 30 2.0 5 0.5 90 82 34 100 NOTES TO ELECTRICAL SPECIFICATIONS (1) See Figures 2 and 3 for current rating at specified operating case temperature. (2) See Figure 1 for free air current rating. (3) See Figure 6 for instantaneous on-state current vs on-state voltage (typical). (4) See Figure 5 for IGT vs Tc. (5) See Figure 4 for IH vs TC. (6) For more than one full cycle rating. see Figure 9. (7) See Figure 8 for tot vs IGT. (8) See Figure 7 for VGT vs TC. (9) Test conditions are as follows: iT = 1 amp for < 1.6 amp devices and 2 amp for = 3 amp devices. Pulse duration = 5Qusec. dv/dt = 20 V/ps. di/dt = 10 amps/us for < 16 amp devices. and 30 amps/ps for = 3 amp devices IGT = 200 mA @ turn-on (10) See Figure 2 (A.8.C.0.E) for maximum allowable case temperatures @ maximum rated current. (11) Pulse width = 3es. (12) IGT = 40 mA maximum @ 40C for C122 devices (13) VGT = 2.0 V maximum @ 40C for C122 devices. (14) Initial on-state current =200 mA (DC) for 1 to 20 amp devices 400 mA (DC) for 25 to 70 amp devices. 47TECCOR ELECTRONICS INC S5 pf By aa72a19 oooLo4L 4 D> +- 25-0) SCRsNon Se ~ Part - Non-lsolated y Isolated Maximum. On-State Current (1) Amps NON-ISOLATED T0-220AB T0-220AB FOR DIMENSIONAL OUTLINES & PACKAGE VARIATIONS SEE PAGE 67 MAX 2N6398 S60151, 2N6404 20 Amps VIM @ iT = 30Apk GENERAL NOTES * Teccor's 2N6394 Series, 2N6400 Series, and 2N6504 Series devices conform to all JEDEC registered data. All measurements are made at 60 Hz with a resistive foad at an ambient temperature of + 25C unless otherwise specified. Operating temperature range (TJ) is 65C to + 125C for TO-92 devices, OC to + 125C for Fastpak, and 40C to + 125C for all other packages. Storage temperature range (7S) is 65C to + 150C for T0-92 devices, 40C to + 150C for TO-202 and TO-220 devices. 20C to + 125C for Fastpaks and ~40C to + 125C for ali others. Lead solder temperature is a maximum of 230C for 10 seconds maximum, 1/16" from case. * The case temperature (TC) is measured as shown on dimensional outline drawings. See package dimensions section of catalog. {AMS} | TAY) MAX 48 nsitive Gate &} gt Repetitive oc Peak Gate-Trigger Oft-State Current Forward = 12V0 & Reverse RL = 600 Voltage (4) 1 600 113 NOTES FOR JEDEC DEVICES Iba & 'RRM Peak Off-State Forward & Reverse Current VORM & VARM mA To = 100C Te = 125C C= 25C MAXIMUM 01 05 1.0 Vat OC Gate-Trigger Voltage Viv On-State Voltage at Max Rated VD = 12 VOC RMS Current RL = 600 Te = 25C (8) (3) Volts Toe = | Te = Volts 25C 3 125C MAX MAX | MIN 1 1.5 1.5 15 15 15 1.5 1.5 1.5 1.5 1.5 1.5 1 15 15 1 15 1.6 4. 2N6400-6405 series of devices also canform to the following specifications a Maximum VGT = 2.5 volts @ 40C b. Maximum IH = 60 mifliamps @ 40C 2. 2N6504-6508 series of devices also conform to the following spectfications- a. Maximum VGT = 1.5 volts @ - 40C b. Maximum IGT = 75 milliamps @ ~ 40C c. Maximum IH = 40 milliamps @ 40Cam eT EE TOO , TECCOR ELECTRONICS INC DEM 46?2819 GOOLO4e &b i Dp T~25-0! . Electrical ecifications L I ~ ~ ~ we - alt - - . * * _. a. ono . a . a ~ 7 = ln: . | -lom. | Pom - | Peay itsm dvdt -| Pt di/dt tgt ty oC Peak Gate Peak Gate Average Peak One Critical Rate RMS Surge Rate Controlled Circuit Holding Current Power Gate Power Cycle Surge of Applied (Non-Repetitive) of Change of Tur-On Time Commutated Current (11) Dissipation Dissipation Forward Current Forward Voltage On-State Current On-State Gate Pulse Turn-Off Gate Open (it) (6) (10) For a Period of Current = 100mA Time (5) (14) 8.3 msec for IGT = 150mA Width = 54s (9) (10) Fusing With 0.128 With Rise Rise Time s Ops (7) Amps Volisips 60Hz = 100C ] Tc = 125C 50Hz Amps*sec Ampsius ps MAX MAX | MAX MIN MIN 40 30 0.6 300 150 374 125 2.0 35 NOTES TO ELECTRICAL SPECIFICATIONS (9) Test conditions are as follows: iT = i amp for < 1.6 amp devices and 2 amp for = 3 amp devices. Pulse duration = 50sec. dv/dt = 20 Vins, di/dt = 10 amps/ps for (1) See Figures 2 and 3 for current rating at specified operating case temperature. < 1.6 amp devices. and 30 amps/ps for = 3 amp devices. IGT = 200 mA @ turn-on. (2) See Figure 1 for free air current rating. (10) See Figure 2 (A,B.C.0.E) for maximum allowable case temperatures @ maximum rated (3) See Figure 6 for instantaneous on-state current vs on-state voitage (typical). current. (4) See Figure 5 for IGT vs Tc. (11) Pulse width = 3ps. (5) See Figure 4 for 'H vs TC. (12) |GT = 40 mA maximum @ 40C for C122 devices. (6) For more than one full cycle rating, see Figure 9. (13) VGT = 2.0 V maximum @ - 40C for C122 devices. (7) See Figure 8 for tgt vs IGT. (44) Initial on-state current =200 mA (DC) for 1 to 20 amp devices. 400 mA (DC) for 25 (8) See Figure 7 for VGT vs TC. to 70 amp devices. 49TECCOR ELECTRONICS INC Gate 73 DE paaveen UOoLO4S & To T-I5- | SCRs Non Sensitive : Part Number VDRM & wtf ' by (solated Non-Isolated AT VRRM | - lat) DRM & IRRM VIM Ver A Maximum Repetitive oC Peak Off-State Peak On-State | DC Gate-Trigger On-State Peak Gate-Trigger Forward & Reverse Voltage at Voltage Current OffState Current Current Max Rated VD = 12 VOC TYPE (1) Forwad | VD = 12 V0C VORM & VRRM RMS Current RL = 600 & Reverse RL = 609 Tg = 250 (8} Voltage (4 (3) Amps mA Volts Ie = | To = | Te = Tc = | Te = 10-2088 10-218 Tesease | toeoag | Noo Iria) | Tau) Volts mA 25C | 100C | 125C Volts 25C | 125C FOR DIMENSIONAL QUTLINES & PACKAGE VARIATIONS SEE PAGE 67 | MAX | MAX MIN | MIN | MAX MAXIMUM MAX MAX | MIN $0325L $0325R 25 16 30 1 | 90] -or | io 7 20 1.6 15 | 02 S0525L $0525R 2 | 16 50 1/30 | or | 10 | 20 1.6 15 | 02 $1026L $1025R 2 | 16 100 1 | 30 { ot | 10 | 20 1.6 15 | 02 $2025L ~ | $2025R 26 | 16 200 1730 7 or | 40 | 20 1.6 45 | 02 40251 $4025R 2 | 16 400 1 [30 | or | 10 7] 20 1.6 is | 02 an S6025L S6025R 25 16 600 1 | 30] of | to | 20 1.6 15 [| 02 mps 2NG504 25 | 6 50 a | 01 2.0 18 02 2N6505 25 16 100 40 | 0 2.0 18 02 2N6506 25 16 200 40 | Ot 2.0 1.8 02 2NG507 25 16 400 40 [01 2.0 1.8 02 2N6508 2 | 16 600 40 | 01 20 18 02 0335J soasaw | 35 2 30 5 | 40 { or | 10 | 20 1.8 15 | 02 $0535) sossaw | 35 | 2 50 5 | 40] ov [ 10 [| 20 18 15 [| 02 35 $1035) sioa5w | 35 | 22 100 5 | 40] of | 10 | 20 1.8 15 | 0.2 Amps $2035) szo3sw | 35 | 22 200 5 | 40 | or | io | 20 1.8 15 | 02 $4035) squ35w | 35 | 22 400 5 | 40 | or | 10 | 20 1.8 15 | 02 $6035) seosow | 35 | 22 600 5 | 40 | o1 [| 10 | 20 1.8 15 | 02 S055 50 | 32 50 5 | 4 ] 01 | 10 | 20 1.8 15 | 02 $1050J 7; 50 | 32 100 5 | 4 | or | io | 20 18 15 | (02 Are $2050J " 50 32 200 5 | 40] or | 10 | 20 18 15 | 02 mps $4050) 50 | 32 400 5 | 40 | 01 | 10 | 20 18 15 | 02 $6050 so | 32 600 5 | 40 | oy | 10 | 20 18 15 | 02 sossaw | 55 | 35 50 5 | 40 [| 1 [ 10 [ 20 1.8 15 | 02 siossw | 55 | 35 100 5 | 40 | o1 | 10 | 20 1.8 15 | 02 AP s2ossw | 55 35 200 5 | 40 | o1 | 10 | 20 1.8 15 | 02 mps siossw | 55 | 35 400 5 | 40 | 01 | 40 | 20 18 15 | 02 soossw | 55 | 35 600 5 | 40} or | 10 | 20 1.8 15 ({ 02 SO565P 6 oat 50 5 | 50 { o2 | 15 | 30 1.8 20 | 02 $1065P : 6 | 41 100 5 | 50 | o2 | 15 | 30 18 20 | 02 S2065P os | 6 4 200 5 | 50 | 02 | 15 | 3.0 1.8 20 | 02 S4065P a | ad 400 5 | 50 | o2 | 15 | 30 18 20 | 02 65 SB065P ae 600 5 | 50 | 02 |- 15 | 30 18 20 | 02 Amps $0565 6 | 41 50 5 | | o2 | 15 | 30 1.8. 20 | 02 $1065 65 | 41 100 5 | 50 | o2 | is | 3.0 1.8 20. | 0.2 $2085) | a | 200 5 | 0 | 02 | 15 | 30 18 20 | 02 S4068J 6 | 44 400 5 | 50 | o2 | 15 | 30 1.8 20 | 02 $6065) 65 | tf 600 5 | 50 | 02 | 15 | 30 18 20 | 02 sos7ow | 70 | 45 50 5 | 50 | 02 | 15 | 3.0 1.8 20 | 02 sio7ow | 70 45 100 5 | 50 | 02 | 15 | 3.0 1.8 20 | 02 aw a 45 200 5 | 50 | o2 | 15 | 30 1.8 20 | 02 mps 7- sao7uw | 70 | 45 400 5 | 50 | 02 | 15 | 30 18 20 | 02 seo7ow | 70 | 45 600 5 | 50 | 02 | 15 | 30 1.8 20 | 0.2 GENERAL NOTES * Teccor's 2N6394 Series, 2N6400 Series, and 2N6504 Series devices conform to all JEDEC registered data. All measurements are made at 60 Hz with a resistive load at an ambient temperature of + 25C unless otherwise specified. Operating temperature range (Td) is 65C to + 125C for T0-92 devices. 0 to + 125C for Fastpak, and - 40C to +1259C for all other packages. Storage temperature range (TS) is 65C to + 150C for T0-92 devices. 40C to + 150C for TO-202 and TO-220 devices. 20C to + 125C for Fastpaks. and 40C to + 125C for all others. Lead solder temperature is a maximum of 230C for 10 seconds maximum; 1/16" from case. The case temperature (TC} is measured as shown on dimensional outline drawings. See package dimensions section of catalog. 50 NOTES FOR JEDEC DEVICES 4. 2N6400-6405 series of devices also conform to the following specifications a. Maximum VGT = 2.5 volts @ ~ 40C b Maximum |H = 60 milliamps @ 40C 2. 2N6504-6508 series of devices also conform to the following specsfications a. Maximum VGT = 1.5 volts @ 40C b. Maximum IGT = 75 millamps @ - 40C c. Maximum IH = 40 milliamps @ 40Ccn TECCOR ELECTRONICS INC. %3 DE I 86729 ooOoLo4Yy oO | 1-25-01 Electrical Specifications + JH lam Pam Paavyy | ltsm_- dvidt at difdt tot | ty oc Peak Gate Peak Gate Average ~ Peak One Critical Rate RMS Surge Maximum Rate | Gate Controked Circut Holding Current Power Gate Power Cycle Surge of Applied (Non-Repetitive) of Change of Turn-On Time Commutated Current (11) Oissipation Dissipation Forward Current Forward Voltage On-State Current On-State Gate Pulse Turn-Off Gate Open (i) (8) (10) For a Period of Current = 150mA Time (5) (14) 8.3 msec for Igy = 150mA | Min Width = 54s (9} (10) Fusing With 0 igs With Rise Amps Voltsizs Rise Time Time a mA Amps Watts Watts Bovz | SOH2 [TC 100% | Te 1259 Amps?sec us 48 us MAX MAX MAX MIN MIN MAX MAX 40 35 35 0.8 350 300 250 175 510 150 2.0 35 40 3.5 35 6.8 350 300 250 175 510 150 2.0 35 40 3.5 5 0.8 350 300 250 175 510 150 20 35 40 3.5 35 0.8 360 300 250 175 510 150 2.0 38 40 3.5 35 0.8 350 300 250 175 ~ $10 150 2.0 36 40 35 35 0.8 350 300 200 150 510 150 2.0 35 2.0 20 0.5 300 255 . 375 150 2.0 2.0 20 0.5 300 255 375 150 20 2.0 20 0.5 - 300 255 375 150 20 2.0 2 0.5 300 255 375 160 20 2.0 20 0.5 300 255 375 180 20 50 3.5 35 0.8 500 425 250 175 1035 150 2.0 35 50 3.5 35 0.8 500 425 250 175 4035 150 2.0 35 50 3.5 35 0.8 500 426 250 175 1035 150 2.0 35 50 3.5 35 0.8 500 425 250 175 1035 150 2.0 35 50 3.5 35 0.8 500 425 250 115 1035 150 2.0 35 50 3.5 35 0.8 500 425 200 150 1035 180 2.0 35 50 40 40 0.8 650 560 425 300 1750 175 2.5 35 50 4.0 40 0.8 650 550 425 300 1750 175 2.5 35 50 4.0 40 08 650 550 425 300 1750 175 2.5 35 50 40 40 0.8 650 550 425 300 1750 1 25 35 50 40 40 0.8 650 550 375 250 1750 11 25 35 50 4.0 40 0.8 650 550 425 300 1750 115 25 35 50 40 40 0.8 650 550 425 300 1750 175 25 35 50 4.0 40 0.8 650 550 425 300 1750 175 2.5 35 50 4.0 40 0.8 650 550 425 300 1750 175 2.5 35 50 4.0 40 0.8 650 550 375 250 1750 175 2.5 35 50 5.0 50 1.0 900 750 425 300 3360 200 2.5 35 50 5.0 50 10 $00 750 425 300 3360 200 2.5 36 50 5.0 56 1.0 900 750 425 300 3360 200 2.5 36 50 6.0 50 1.0 900 750 425 300 3360 200 2.5 35 50 5.0 50 1.0 $00 750 375 250 3360 200 2.5 35 50 5.0 50 1.0 950 800 425 300 9745 20 25 % 50 5.0 50 4.0 - 950 800 425 300 3745 200 25 EY 50 5.0 50 1.0 950 800 425 300 3745 20 25 35 50 5.0 50 1.0 950 800 425 300 3745 200 25 35 50 .0 50 1.0 950 800 375 250 3745 200 25 35 50 5.0 50 1.0 950 800 425 300 3745 200 2,5 36 50 5.0 50 1.0 950 800 425 300 3745 200 2.5 35 50 5.0 50 1.0 950 800 425 300 3745 200 2.5 35 50 5.0 50 1.0 950 800 425 300 3745 200 25 35 50 5.0 50 1.0 950 800 375 250 3745 200 25 35 NOTES TO ELECTRICAL SPECIFICATIONS {1} See Figures 2 and 3 for current rating at specified operating case temperature. (2) See Figure 1 for free air current rating (3) See Figure 6 for instantaneous on-state current vs on-state voltage (typical) (9) Test conditions are as follows: iT = 1 amp for < 1.6 amp devices and 2 amp for = 3 amp devices. Pulse duration = 5Q.sec. dv/dt = 20 V/ys. di/dt = 10 amps/us for < 1.6 amp devices, and 30 amps/ps for => 3 amp devices. |GT = 200 mA @ turn-on (10) See Figure 2 (A.B.C.D.E) for maximum allowable case temperatures @ maximum rated current. (4) See Figure 5 for IGT vs TC. (5) See Figure 4 for JH vs TC. (6) For more than one full cycle rating. see Figure 9. (7) See Figure 8 for tgt vs IGT. (8) See Figure 7 for VGT vs TC. 51 (11) Pulse width < 3ys. (12) IGT = 40 mA maximum @ 40C for C122 devices. (13) VGT = 2.0 V maximum @ 40C for C122 devices. (14) Initiat on-state current = 200 mA (DC) for 1 to 20 amp devices. 400 mA (DC) for 25 to 70 amp devices.i TECCOR ELECTRONICS INC ST TE paazeais oooLouS 1 str 25-0 SCRsNon Sensitive Gate THERMAL RESISTANCE (STEADY STATE) fa? PLASTIC TO-92 1.0 Amp 1.6 Amp 3.0 Amp 4.0 Amp 6.0 Amp 8.0 Amp 10.0 Amp 12.0 Amp 15.0 Amp 16.0 Amp 20.0 Amp 25 35 50 Amp Amp Amp Amp Amp Amp 60/145 oO O THERMOTAB TO-220AB 6.7 6.9/50 40 3.4 21 ELECTRICAL ISOLATION ReuciRe. NON-ISOLATED TO-220AB oc iW (TYP NS -O ISOLATED TO-218X NON-ISOLATED TO-218X FASTPAK TO-3 BASE -53 60 Most Teccor isolated SCR packages will withstand a minimum high potential test of 2500 VAC RMS from leads to case over the devices operating temperature range. See table for standard and optional isolation ratings. ELECTRICAL ISOLATION FROM LEADS TO CASE U.L. RECOGNIZED FILE #71639 TYPE ISOLATED ISOLATED VAC (RMS) 70-92 TO-220AB T0-218 FASTPAK 1600 Standard - - - 2500 No Standard Standard Standard 4000 No Optional* No No *For 4000V Isolation Use 'V Suffix FIGURE 1A Maximum Allowable Ambient Temperature vs RMS On-State Current 8 CURRENT WAVEFORM: Sinuscidat LOAD: Resistive ot Inductive 2 o a a Maximum Allowable Amblent Temperature (Ta)c 20 NX SA CONDUCTION ANGLE: 1802 ~T FREE AIA RATING SS TN AN o> . NI cz, Y. 2, Yo] Nel oN - OP Ae C, NQF. - ey 2. we & 2 > YS <0 -h yl x Wo, , ag 3 a & Os ko 40 oh iN fF, 49, & DS 7e Z &, | 0 o2 04 06 08 1.0 1.2 1.4 1.6 18 20 RMS On-State Current ('T (RMS) |Amps 2.2 52 Maximum Attowable Ambient Temperature (TA)-C FIGURE 1B Maximum Allowable Ambient Temperature vs Average On-State Current 120 80 60 40 29 tL - T a) T CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 FREE AIR RATING NS ANA N - PY . - | I > 2 A K f4 Ue. z, Se <n > 20, > . oO So - & ty & N dy, > f % a Oy Sa | a XS AL NS ee, fy "> g 02 o4 06 08 10 1.2 Average On-State Current [!T (AV) }Amps_ TECCOR ELECTRONICS INC SCRsN 73 IE 38728 LF ouULOUG 3 25-0! on Sensitive Gate tare seen eet Maximum Allowable Case Temperature (TC)-C Maximum Allowable Case Temperature (TC)-C Maximum Allowable Case Temperature (TC)-C FIGURE 2A Maximum Allowable Case Temperature vs RMS On-State Current ro 3 _ o LOADO- Resistive. or Inductive CONDUCTION ANGLE: 180 an dimensional drawings snag oe moreyernnrs sarees T GURRENT WAVEFORM: Sinusoidal CASE TEMPERATURE: Measure as shown | FIGURE 28 Maximum Allowable Case Temperature vs RMS On-State Current n o 8 o 3 | { e 3 EP PS 7 te toe Ta : Os, Pol Lso. 02 Pry, las pa 3 T t T CURRENT WAVEFORM: Sinuscidat LOAD: Resistive or inductive CONDUCTION ANGLE: 180 4 CASE TEMPERATURE: Measure as shown 8 o ae! - ee _on dimensional drawings 2 Wi 70, ~ 3 oo o 8 ~ 3 Maximum Allowable Case Temperature (TC)-C. gs a o s a FIGURE 2C Maximum Allowable Case Temperature 10 20 30 RMS On-State Current (IT (RMS) ]Amps vs RMS On-State Current 50 40 0 2 4 6 8 10 12 RMS On-State Current [IT (RMS) JAmps FIGURE 2D Maximum Allowable Case Temperature vs RMS On-State Current 190 | T 130 7 F mT CURRENT WAVEFORM: Sinusoidal CURRENT WAVEFORM Sinusoidal Lo ee tera Le 120 Ci ION A nf 4 120 f IGLE- 4 16 4 CASE TEMPERATURE: Measure as shown 9 CASE TEMPERATURE: Measure as shown > Me >| on dimensignal drawings a SN on dimensional drawings . ON Ox, ce { 110 pss Ags > ers = 110 a Dy FBS 80.4, 20 AMP TO-220 gE Ap Say, [ Om Wop eS 0, _ L-ASOLATED) g 733 ips Toe 100 - oy, Ra Oae < S 100 Os 78 6, BA SERGE - 5 fF Wig Fa Suse kg SS LAr e Soy aS ay ATE VR we 3 3 By 2 80} g g 90 7 a 9 ss - we 9 a > LA By - 2 sof_- = 80 OS z Dy 70 5 70 - 2 1 z a . = 60 = 60 50 50 = 0 4 8 12 16 20 0 8 12 16 20 24 28 32 36 FIGURE 2E Maximum Allowable Case Temperature RMS On-State Current [1T (AMS) JAmps vs RMS On-State Current AMS On-State Current ['F (RMS) ]Amps FIGURE 3A Maximum Allowable Case Temperature vs Average On-State Current tT. J T CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180 4 CASE TEMPERATURE: Measure as shown a o 3 Maximum Allowable Case Temperature (TC)-C g & 430 T T 1 CURRENT WAVEFORM: Sinusdidal LOAD: Resistwe or inductive 120 CONDUCTION ANGLE: 189 1 L. CASE TEMPERATURE: Measure as shown SO on dimensionat drawings 4 110 i Ss SS - DSS ee 100 (Sp. SS 207 90 _ - = KORRES Sao, : | 55 AMP 10-218 (NORSOLATED) SEAS Ren, a 65 AMP 10-216 (ISOLATED) COs 0) ~ 65 AMP FASTP AKON WN 70 j- - - - - 60 ~ 50 . - 0 10 20 30 40 50 60 RMS On-State Current {'T (RMS) |Amps a o 70 2a M4 Q % See, f Ss NY 8, 0 5 106 15 20 25 30 Average On-State Current ('T (AV) Amps 53Ey fh TECCOR ELECTRONICS TNC =a Ses eons uuuauy G T T-45- ol SCRsNon Sensitive Gate. 2 - _ FIGURE 3B Maximum Allowable Case Temperature - FIGURE ac Maximum Allowable Case Temperature - .vS Average On-State Current : . vs Average On-State Current tb tp ie 7 Lo. ; ao 3 & { tr t 130 ~T ToT ~ CURRENT WAVEFORM Sinusoidat - LOAD: Resistive or Inducive CURRENT WAVEFORM: Sinusoidal CONDUCTION ANGLE: 180 e LOAD: Resistive or Inductive 9 CASE TEMPERATURE: Measure as shown| @& 120, CONDUCTION ANGLE 180? - o on dimensional drawings Ee NN SS CASE TEMPERATURE: Measure as shawn. e : 2 on dimensional drawings @ 2 . 2 8 - & 8 ol \N - 3 10 E A AMP TO-220 A oO 2 . (ISOLATED) a : NN. 3 Po * i 5 . 2 I>, 4 ~~ 2 100 Ve 2 a0 3 > > Atyy P22 g < aw, as . 70%, LS, } < E Zn So AY, E E | RAINE alsa, DSS 2 % 90 NT Kae z 8 . a8, = Ds 60 60 ~ 59 --__1 t____,1}.._4.i__- a 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 Average On-State Current [IT (AV) ]}~Amps Average On-State Current ['T (AV) }Amps FIGURE 3D Maximum Allowable Case Temperature FIGURE 3E Maximum Allowable Case Temperature vs Average On-State Current vs Average On-State Current 130 = T T = T = 130 t T CURRENT WAVEFORM. Sinusaidal CURRENT WAVEFORM: Sinusoidal LOAD: Resislive or Inductve LOAD Resistive or Inductive 120 =CONDUCTION ANGLE: 180 120 CONDUCTION ANGLE: 180 4 _ CASE TEMPERATURE: Measure as shown CASE TEMPERATURE: Measur as shown. on dimensional drawings on dimens:onatl drawings "o NS | me 4 70 AMP 7: 218 (NON: sol TED: ty - Be y; 218 (NONASOLATED) 755 AMP TO-218 (NON-ISOLATED) 100 - N 100 ; SSS Maximum Allowable Case Temperature (TC)-C Oo Maximum Allowable Case Temperature (Tc)-c ro. $0 AMP TO-218 (ISOLATED}~4 L B my \, SN 65 AMP FASTPAK NR 80 a0 = = i 65 AMP TO-218 (ISOLATED) Ss SY h, 70 70 60 60 50 50 0 4 8 12 16 20 24 Go 10 20 30 40 50 Average On-State Current {IT (AV) |~Amps Average On-State Current ['T (AV) JAmps FIGURE 4 Normalized DC Holding Current FIGURE 5 Normalized DC Gate-Trigger Current vs Case Temperature vs Case Temperature 2.0 - - 1 1 T 2.0 INTIAL ON-STATE ~ \ -f. CURRENT = 200 mA(DC) | - N Nd FOR 1-20 AMP DEVICES, AND 400 mA {0C} FOR L I NN - 25-70 AMP DEVICES tL - - 1.5 NI 1.5 ia J 2 + = NJ 5! ' 2 1.0 bs 9 ! _ = NY r S NY Ratio of ~=-- Ratlo of ba em -40 -i5 +25 . +65 +105 +125 . -40 ~15 +25 +65 +105 +125 Case Temperature (7C)C Case Temperature ('C)C 54 ra aigTECCOR ELECTRONICS INC 73) (ODE Ba728L4 ooo0104a ? I T- 215 -Ol SCRsNon Sensitive Gate a FIGURE 6A Instantaneous On-State Current vs On-State Voltage (Typical) 30 80 /; 28 AMP DEVIC oJ 70 Te = 25C 7 60 i To : jy & 50 = 4 5 8 : / : Y/ 2 40 - ~ 6 0 15-20 AMP DEVICES. Li Yo 3 . Sn c 0 12 AMP DEVIGES Af 3 6-10 AMP DEVICES. K I 10 Lf QA 1-4 AMP DEVICES 0 Qo 6 8 1.0 1.2 14 L6 (nstanlaneous On-State Voltage (T}Volts FIGURE 7 Normalized DC Gate-Trigger Voltage vs Case Temperature 15 YK MN Ss - B 1.0 = boo Fo pS 3 2 3s 5 ac a -40 -15 +25 +65 +105 +125 Case Temperature (TC)C FIGURE 10A Power Dissipation (Typical) vs RMS On-State Current 4.0 2 GURRENT WAVEFORM: Half Sine Wave A s f LOAD: Resistive or Inducth 7 = CONDUCTION ANGLE: 189 30 L. << = / 1 : 7 a 8 20 16-40 AMP DEVICES /] 3 Li 8 Yo |. eyo KLAMP Devices 6 10 ~ if oD oa a : JA < o ~ 0 . 0 1 2 3 4 RMS On-State Current ['T (RMS)]Amps Turn-On Time (gt}psec Instantaneous On-State Current (iT)}Amps Average On-State Power Dissipation [Pp (AV)]Watts 2 = # = B 8 8s 8 8 8 8 8 8 8 8 o FIGURE 6B Instantaneous On-State Current vs On-State Voltage (Typical) To = 25C 65 & 70 AMP 0 6 8 1.0 1.2 1.4 8 1.6 Instantaneous On-State Voltage (T)Volts FIGURE 8 Typical Turn-On Time vs Gate Trigger Current 6-12 AMP 18-35 AMP 20 30 40 50 60 80 6100 200 DC Gate Trigger Current ((GT}mA FIGURE 10B Power Dissipation (Typical) vs RMS On-State Current (Figures 10C & 10D on next page) CURRENT WAVEFORM. Half Sine Wave F- LOAD: Rasistive or Inductive CONDUCTION ANGLE: 180 A 16-20 AMI DEVICES ~ 4 Yo 12 AMP DEVICES. J / 6-10 AMP DEVICES YA, ga 6 Hy CO LIA RMS On-State Current (!T (RMS)|-Amps 55TECCOR ELECTRONICS INC 73 DE fas72ai9 0001049 4 I T+A45-0l v 1000 800 600 400 300 200 100 80 60 40 30 Peak Surge (Non-Repetitive) On-State Current (1TSM)Amps o ff aD @ SCRsNon Sensitive Gate. FIGURE 9 Peak Surge Current vs Surge Current Duration LOAD: Resistive RMS ON-STATE CURRENT: ('T (RMS)]: Max. Rated Value at Specified Case Temperature GATE MAY AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL. OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED V. 2 394 56 8 10 20 30 40 5060 80100 Surge Current DurationFull Cycles 200 300400 600 800 1000 FIGURE 10C Power Dissipation (Typical) vs RMS On-State Current 32 28 a CURRENT WAVEFORM. Half Sing Wave LY 24 [LOAD: Resistive or Inductive We CONDUCTION ANGLE. 180 Ge xy 20 by Z| ey od 16 ow vy Average On-State Power Dissipation [Po (Avyjwatts Average On-State Power Dissipation [PD (AV)|Watts 12 16 20 24 28 32 RMS On-State Current ['T (RMS)}~Amps 36 60 50 40 30 20 FIGURE 10D Power Dissipation (Typical) vs RMS On-State Current ; & CURRENT WAVEFORM: Hall Sine Wave Z eS LOAD. Resistive or Inductive S CONDUCTION ANGLE: 160 20 30 40 50 RMS On-State Current {!T (RMS)|Amps 70 56