MAES an AMP company General Purpose Low Noise Bipolar Transistors V3.00 Features Case Styles @ Low Noise Through 1.5 GHz @ Hermetic Package Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz through 2 GHz. These devices are offered in several dif- ferent families with different f,, gain and dynamic range characteristics. They are offered in hermetic, RF packages and as chips. Also offered are a family of low power, high f, oscillator transistors useful in applications up to 3 GHz. OL Specifications Subject to Change Without Notice. M/A-COM, Inc. 1 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors Selection Guide V3.00 Nominal Optimum Useful Noise Figure Nominal Frequency Model No. Nominal f; at Current Current Iq (Max.) Range Series (GHz) (mA) Range (mA) (MHz) MA42161 7.0 3 0.5 - 7.0 20 500 - 2500 MA42114 5.5 5 3.0 - 20.0 125 100 - 1500 MA42144 45 3 1.0 - 10.0 50 300 - 2000 MA42151 45 3 1.0 - 10.0 50 300 - 2000 MA42001 2.5 5 5.0 - 40.0 125 10 - 750 MA42021 18 1 1.0-3.0 40 10 - 600 MA42051 18 2 1.0-5.0 50 10 - 600 MA42121 1.5 1 0.9 -3.0 80 10 - 600 MA42181 2.8 20 10.0 - 60.0 300 10 - 1600 Typical Performance Curves NOISE FIGURE VS. FREQUENCY 7.0 VceE=10V Ic =5mA 6.0 5.0 MA42161 SERIES o MA42001 = 40 SERIES w MA42141 5 SERIES 3 z Yrnaazrii J uw 3 3.0 A SERIES 9 / / L V 1] L 2.0 V4 a oA a La ceeeenn erasers tT | 1.0 4 5 Specifications Subject to Change Without Notice. 2 6 7 8.91.0 FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.09.010.0 M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. Fax +44 (1344) 869 595 +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 Typical Performance Curves (Contd) |Sp,|2 VS. FREQUENCY 30 Vcp=10V Ic =5mA 35 Pn CE c m MA42111 tN 20 aS MA42001 IN ; Soo. = is SERIES N iN <3 NY MA42141 a = MA42161 Nr BNax Maas NYA 10 BS NS WN N 5 aN N Nw DN NO 4 2 3 4 5 6 7 8.910 2.0 3.0 40 5.0 6.0 7.08.09.010.0 FREQUENCY (GHz) COMMON-BASE POWER OUT VS. FREQUENCY 90 9 80 << 8 By 70 a MA42151 ey e Vep= 15V 7 3 z= < GN Ic = 20 mA sy 60 SERIES 8 p ~N - 50 5 & : $ N 3 zg = 40 = NY 4 G 5 = 5 30 a 8 3 <> i a 20 = N Maazi91 2 =@ Ver * 20V < Ic = 50 mA s 4 SERIES 10 0.5 1.0 15 2.0 2.5 3.0 3.5 4.0 FREQUENCY (GHz) Specifications Subject to Change Without Notice. M/A-COM, Inc. 3 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42161 Series Absolute Maximum Ratings at 25 C Description MA42161 Series Nominal f, = 7 GHz Parameter Symbol | Unit Absolute . T Maximum @ Nominal Current Range = 0.5 to 7 mA e Io Max. = 20 mA Collector-Base Voltage Vepo | Volts 20 @ Frequency Range = 500 MHz to 2 GHz Collector-Emitter Voltage Voce | Volts 12 The MA42161 is a low noise silicon planar epitaxial tran- Emitter-Base Voltage Vego_ | Volts 15 sistor for 0.5 to 2.0 GHz amplifiers. These transistors have Collector Current lo mA 20 typically 14.0 dB gain at 2.0 GHz and nominal noise fig- ; ; . Junction Operating Temperature T C -65 to +150 ure of 2.3 dB at 2.0 GHz. These transistors when housed P 9 P J * in case style 511, are useful in low level oscillators from Storage Temperature Tg C | -65 to +200 15 GHz. Power Dissipation (Case Style 511) Pp mw 250 Specifications @ T, = 25C Maximum2 Nominal2 Test Maximum2 Unilateral Nominal2 Gain @ Optimum Model1,4 Frequency Noise Figure Gain |Soyel 2 Noise Figure Number (GHz) (dB) (dB) (dB) (dB) MA42161 2.0 2.5 12 8.0 11.0 MA42161 1.0 1.5 18 12.5 15.0 Notes: 1. 1 dB compression point is -5 dBM. 2. Test conditions I, = 3 mA, Voz = 10 volts. 3. The nominal collector to emitter sustaining voltage is 12 volts; Io = 1.0 mA. 4. Available in case styles 511 and Micro-X. To order, add package as suffix to the model number i.e., MA42161-511. Electrical Specifications @ 25 C MA42161 Series Parameter Condition Symbol Min. Typical Max. Unit Collector Cut-off Current Vong =10V loBo _ _ 200 nA IE =OpA Emitter Cut-off Current Ven =1V lEBO _ _ 1.0 pA Ip =OUA Forward Current Gain Vop = 10V Hee 50 80 250 _ Ip=5mA Collector-Base Junction Vop =5V Cop _ 1.0 1.2 pF Capacitance f= 1 MHz Specifications Subject to Change Without Notice. 4 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42141 Series Absolute Maximum Ratings at 25 C Description MA42141 Series Nominal f,. = 4.5 GHz Parameter Symbol Unit Absolute ; T Maximum Nominal Current Range = 1 to 10 mA I, Max. = 50 mA Collector-Base Voltage Voso Volts 27 e Frequency Range = 200 MHz to 2.0 GHz Collector-Emitter Voltage VoEO Volts 20 @ Geometry = 63 Emitter-Base Voltage VeBo Volts 3 The MA42141 NPN silicon planar transistor features excel- Collector Current lo mA 50 lent high frequency current gain at medium current levels. Junction Operating Temperature T, G | 65 to +150 The MA42141 series has low noise figures from the fre- Storage Temperature Ts S -65 to +200 quency range of 0.5 to 2 GHz. These transistors are use- Power Dissipation P WwW ful in RF amplifiers and low level oscillators from 100 MHz to 2 GHz Case Style 509 400 Case Style 510 700 Case Style 511 700 Specifications @ T, = 25C Maximum2 Maximum Nominal Model! Test Frequency Noise Figure Unilateral Gain Bvebo Number (GHz) (dB) (dB) (Volts) MA42144 1.00 2.5 17 1.5 Notes: 1. MA42141 is available in case styles 509, 510 and 511. To order, add the case style as a suffix to the basic model number, ie.: MA42141-510. 2. The collector current = 5 mA. Electrical Specifications at 25 C MA42141 Series Parameter Condition Symbol Min. Typical Max. Unit Collector Cut-off Current Vop = 10V loBo _ _ 200 nA IE =OpA Emitter Cut-off Current Ven =tV lEBO _ _ 1.0 pA Ip =OpA Forward Current Gain Vog = 10V Hee 20 80 200 _ Ip=5mA Collector-Base Junction Vop =5V Cop _ 0.8 1.0 pF Capacitance f= 1 MHz Specifications Subject to Change Without Notice. 5 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. Fax (800) 618-8883 Fax +81 (03) 3226-1451 +81 (03) 3226-1671 m Europe: Tel. Fax +44 (1344) 869 595 +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42111 Series Absolute Maximum Ratings @ 25 C Description MA42111 Series Nominal f, = 5.5 GHz Parameter Symbol | Unit | Absolute @ Nominal Current Range = 3 to 50 mA Maximum e = Ie Max. = 125 mA Collector-Base Voltage VoBo Volts 20 @ Frequency Range = 100 MHz to 1.5 GHz Collector-Emitter Voltage VoEo Volts 15 The MA42111 series of silicon NPN bipolar transistors is . : : . : : Emitter-Base Voltage VeRO Volts 2.5 designed to give low noise figure and wide dynamic range. They can be used as low power oscillators to Collector Current Io mA 125 4 GHz. Junction Operating Temperature T; C -65 to +150 Storage Temperature Ts C -65 to +200 Power Dissipation Pp mW Case Style 509 450 Case Style 510 1200 Case Style 511 750 Specifications @ T, = 25C Test Maximum! Maximum2 Nominal Model Case Frequency Noise Figure Unilateral Gain Minimum3 Gain @ Opt. NF Number Style (MHz) (dB @ mA) (dB) |So4el2 (dB) MA4211 1-509 509 450 1.5 14 13.0 13 MA42111-510 510 450 1.5 17 15.5 15 MA42111-511 511 450 1.5 19 16.0 15 Notes: 1. The maximum noise figure is measured as follows: Vog = 10 volts lp =5mA Frequency = 450 MHz. 2. For the maximum unilateral gain, 1 dB compression point is equal to 0 dBm. 3. Minimum |S.,E/2 is: Voge = 10 volts, I, = 20 mA, and the frequency = 450 MHz. 4. The maximum collector cutoff current is 10 pA, where Voz = 10 volts. Electrical Specifications @ 25 C MA42111 Series Parameter Condition Symbol Min. Typical Max. Unit Collector Cut-off Current Vog = 10V loBo _ 10 100 nA IE =OpA Emitter Cut-off Current Ven =1V lEBO _ _ 1.0 pA Ip =OUA Forward Current Gain Vop = 15V Hee 20 120 300 _ Ip=5mA Collector-Base Junction Vop =5V Cop _ 1.0 1.2 pF Capacitance f= 1 MHz Specifications Subject to Change Without Notice. 6 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42001-509 and 2N6665-509 Absolute Maximum Ratings @ 25 C Description MA42001 Series Nominal f, = 2.5 GHz p symbol | U Absol . _ arameter ymbo nit solute Nominal Current Range = 5 to 40 mA Maximum Ic Max, = 125 mA Collector-Base Volt Vv Volt 20 ollector-Dbase Vollage olts Frequency Range = 10 MHz to 750 GHz 9 CBO Collector-Emitter Voltage VoEo Volts 15 This series of NPN silicon bipolar transistors is designed to : provide low noise figures at frequencies from 10 to 750 Emitter-Base Voltage VeBo Volts 25 MHz. These transistors have flat noise figures from ~2 to Collector Current lo mA 125 20 mA collector current. This series is recommended for Junction Operating Temperature T, c | -65 to +150 applications such as IF and RF amplifiers from - 10 to 750 MHz where wider dynamic range is required. Storage Temperature Ts C | 65 to +200 Power Dissipation Pp mW Case Style 509 450 Case Style 510 1200 Case Style 511 750 Specifications @ T, = 25C Test Maximum! Maximum2 Minimum2 Minimums Model Case Frequency Noise Figure Unilateral Maximum4 By ibo Bvebo Number Style (MHz) (dB @ mA) Gain (dB) cho (nA) (Volts) (Volts) 2N6665-509 509 60 1.0 @ 5.0 28 10 20 2.5 MA42001-509 509 60 1.0 @ 5.0 28 10 20 2.5 Notes: 1. Voge = 10 Volts. 2. Collector current = 10 pA. 3. Ie = 10HA maximum. Specifications Subject to Change Without Notice. 7 M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42021 and 2N Series Description Nominal f, = 1.8 GHz @ Nominal Current Range = 1 to 5 mA I, Max = 50 mA @ Frequency = 10 MHz to 600 MHz This series of NPN silicon planar transistors, packaged in the 509 case style are useful for low noise, high gain amplifiers from 10 to 600 MHz. All these transistors have gold metallization resulting in a rugged, highly reliable transistor. Specifications @ T,=25C Maximum4 Maximum Minimums Minimum6 Model! Test Frequency Noise Figure Unilateral Gain By no By.no Number (MHz) (dB @ mA) (dB) (Volts) (Volts) MA42021 60 16@15 23 30 2.5 2N5031 450 2.5 @ 1.0 10 30 2.5 2N3570 450 25@1.5 10 30 2.5 2N3953 450 3.0 @ 1.0 10 30 2.5 2N5032 450 3.0 @ 1.0 10 30 2.5 2N3880 450 35@15 10 30 2.5 2N3839 450 3.9@1.5 10 30 2.5 2N3571 450 4.0 @ 2.0 10 30 2.5 2N5054 450 4.0 @ 2.0 10 30 2.5 2N3683 450 45@15 10 30 2.5 2N2857* 450 45@15 10 30 2.5 2N5179 450 45 @ 2.0 10 30 2.5 2N5053 450 5.0 @ 2.0 10 30 2.5 2N3572 450 6.0 @ 2.0 10 30 2.5 * This transistor can be screened to JAN level screening. Notes: 1. This series of NPN silicon planar transistors is packaged in case style 509. 2. Maximum collector cutoff current is 10 pA, where Vop = 15 volts. 3. The nominal current transfer ratio is 120 where Vo- = 1 volt, and I, =3 mA. 4. Vog = 6 volts. 5. lo =1 pA 6. Ip = 10 pA Specifications Subject to Change Without Notice. 8 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42051 Series Absolute Maximum Ratings @ 25 C Description MA42051 Series Nominal fr = 1.8 GHz Parameter Symbol | Unit Absolute @ Nominal Current Range = 1 to 5 mA Maximum @ I. Max. = 40 mA Collector-Base Voltage Vogo Volts 20 e = Frequency Range = 10 MHz to 600 GHz Collector-Emitter Voltage VoEO Volts 15 The MA42051 series of NPN silicon planar transistors will Emitter-Base Voltage Vigo | Volts 25 give high gain and low noise figure characteristics in VHF fC: Sas . . . Collector Current lo mA 40 amplifier applications. This transistor is recommended for low power oscillators from 100 MHz to 1 GHz. Junction Operating Temperature Tj C | -65 to +150 Storage Temperature Ts C -65 to +200 Power Dissipation Pp mW Case Style 509 300 Case Style 510 450 Case Style 511 350 Specifications @ T,=25C Test Maximum3 Maximum4 Minimums Minimum? Model Frequency Noise Figure Unilateral By bo By.bo Number (MHz) (dB @ mA) Gain (dB) (Volts) (Volts) MA42051 450 2.2 @ 3.0 18 20 2.5 Notes: 1. MA42051 is available in the 509, 510, 511 case styles. When ordering, specify the desired case style as a suffix to the basic mode number, ie., MA42051 -510. 2. Voc = 8 Volts 3. Ie = 10 pA. 4. Vog = 8 Volts; |, = 3 mA; Nominal current transfer ratio = 75. 5. Vog = 10 Volts; Maximum collector current = 40 mA. Specifications Subject to Change Without Notice. M/A-COM, Inc. 9 North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors MA42121 Series Description Maximum Ratings @ 25 C MA42121 Series V3.00 Nominal fr = 1.5 GHz Parameter Symbol | Unit Absolute @ Nominal Current Range = 0.4 to 3 mA Maximum I, Max. = 80 mA Collector-Base Voltage Vero | Volts 30 e = Frequency = 100 to 600 MHz Collector-Emitter Voltage VoEO Volts 30 This series of NPN epitaxial silicon planar transistors is Emitter-Base Voltage Vigo | Volts 40 designed for 100 MHz to 1 GHz amplifiers and low power . . Collector Current lo mA 80 oscillators up to 4 GHz. The MA42121 has the maximum frequency of oscillation of 4.2 GHz. Two case styles are Junction Operating Temperature T; C | -65 to +150 offered, case style 508 for low power oscillator applica- Storage Temperature Ts 6. | -65 to +200 tions and case style 509 for small signal IF and RF ampli- fj Power Dissipation Pp WwW 1ers. Case Style 508 1.0 Case Style 509 0.5 Specifications @ T, = 25C Maximums,5 Maximum2 Minimum4 Maximum4 Frequency Model! Case1 Unilateral Gain | Gain Bandwidth Available Gain Oscillation Number Style Gu(dB) f; (GHz) GA(dB) (GHz) MA42121 508 13 1.3 12.8 4.2 Notes: 1. Available in case styles 508 and 509. When ordering, specify the pack- age, by adding the case style as a suffix to the basic model number, i.e MA42121 -508. 2. The test frequency is 450 MHz. 3. Voge = 10 volts, |, = 20 mA, Frequency = 500 MHz. 4. Vog = 10 volts, I, = 20 mA, Frequency = 1 GHz. 5. The maximum frequency of oscillation is calculated from S-parameters, Fmax is the frequency at which the extrapolated Ga (max) is 0 dB. 6. Ig = 10 PA, Ip = 0. Specifications Subject to Change Without Notice. 10 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42151 and MA42191 Series Absolute Maximum Ratings @ 25 C Description MA42151 and MA42191 Series Nominal f, = 4.5 GHz Parameter Symbol | Unit | MA42151 | MA42191 e i = Nominal Current Range = 1 to 10 mA Collector-Base Voltage Vopo Volts 27 30 @ I, Max. = 100 mA ; Collector-Emitter Voltage VoEO Volts 25 20 @ Frequency = 300 MHz to 2.0 GHz Emitter-Base Voltage Vepo Volts 1.5 3.5 These NPN planar transistors are characterized for local Collector Current lo mA 50 300 oscillator use in to 1.0 to 3.0 GHz range. The MA42151 Junction Operating when mounted in a common base package (case style Temperature qj G | -65 to +150 | -65 to +150 510) exhibits a typical Emax of 9.5 GHz at 20 mA Storage Temperature Ts C -65 to +200 | -65 to +200 collector current. The MA42191 in case style 510 exhibits Sowa Dissloa a typical Fmax of 6.0 GHz at 50 mA collector current. This ( Ones Sye ane Py mW 700 30 transistor is also available in the hermetically sealed case style 511 stripline package. Specifications @ T, = 25C Nominal Minimum2 Minimum? Minimum4 Collector Current Model By ibo Bvebo Voeo Current Transfer Number (Volts) (Volts) (Volts) (mA) Ratio (Hr) MA42151 27 1.5 20 50 60 MA42191 30 3.5 25 300 40 Notes: 1. The standard case style for the MA42151 and MA42191 is case style 510. The MA42151 is also available in the hermetically sealed 511 stripline package; to order, add the case style as a suffix to the basic model number, i.e. MA42151-511. 2. Ig = 10 PA for MA42151; 1, = 100 pA for MA42191. 3. le = 10 pA. 4. lp = 500 pA. Specifications Subject to Change Without Notice. M/A-COM, Inc. 11 North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 MA42181-510 Absolute Maximum Ratings @ 25 C Description MA42181-510 Nominal fT = 2.8 GHz Parameter Symbol | Unit | Absolute @ Nominal Current Range = 10 to 60 mA Maximum @ IC Max. = 300 mA Collector-Base Voltage Vepo Volts 30 Frequency Range = 10 MHz to 1 GHz Collector-Emitter Voltage VoEO Volts 25 The MA42181 transistor is designed for wide dynamic Emitter-Base Voltage Vepo | Volts 36 range amplifier applications from 100 MHz to 1 GHz. Collector Current lo mA 300 Other applications include second stage high dynamic Junction Operating Temperature T, 6 | -65 to +150 range amplifiers and low level oscillators. Storage Temperature Ts C -65 to +200 Power Dissipation Pp WwW Case Style 510 3.0 Specifications @ T, = 25C Maximum Minimum! Minimum2 Minimum? Compression Unilateral Model Case By ibo By eso By ico Point Gain(dB) Number Style (Volts) (Volts) (Volts) (Pap) (GHz) MA42181-510 510 30 3.5 25 +25 8.4 Notes: 1. Ig = 100 pA 2. Ip = 10 pA. 3. Ig = 100 pA. 4. Nominal current transfer ratio is 60; Voge = 15 Volts; lp = 100 mA. 5. Vog = 15 Volts; lp = 60 mA; ZG = ZL = 500 Ohms; Frequency = 1 GHz. 6. The nominal |S5,-|? is 2.0 dB; Vog = 15 Volts; |, = 60 mA; Frequency = 2 GHz. 7. The nominal gain at optimum noise figure is 14.5 dB; Vog = 15 Volts; lq = 60 mA; Frequency = 1 GHz. 8. Vog = 15 Volts; |, = 60 mA; Frequency = 1 GHz. Specifications Subject to Change Without Notice. 12 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Case Style 508 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX A A 0.209 0.230 5,31 5,84 C B 0.065 0.085 1,65 2,16 DIAS] c 0.178 0.195 4,52 4,95 i t D 0.030 0,76 1 E 0.500 _ 12,70 ai E F 0.016 0.021 0,41 0,53 Fool G 0.090 0.110 2,29 2,75 H gg 91 gg 91 J 0.028 0.048 0,71 1,22 K 43 47 43 47 L 0.036 0.046 0,91 1,17 Case Style 509 INCHES MILLIMETERS ADIA DIM. MIN. MAX. MIN. MAX CDIA A 0.209 0.230 5.31 5,84 - B 0.170 0.210 4,32 5.33 L i Cc 0.178 0.195 4,52 4,95 { UOU E D _ 0.020 _ 0,51 > AM E 0.500 _ 12,70 _ ) BASE G F 0.016 0.019 0,44 0,48 syeuten DBE YU PEAGES G 0.090 0.110 2,20 2,79 ere ) COLLECTOR H 89 91 89 91 Ye Sy (4) CASE J 0.028 0.048 0,71 1,22 K 43 47 43 47 L 0.036 0.046 0,91 1,17 Specifications Subject to Change Without Notice. M/A-COM, Inc. 13 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 3 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors Case Styles (Cont'd) Case Style 510 = 3. Zo a ole A. a ST! y A mp] jee 3p} Dia | Case Style 511 | C beqg (fone F - <-> = Sroct) + CI EMITTER VS LJ 8 ( BASE A, | be mn Specifications Subject to Change Without Notice. 14 V3.00 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX A 0.195 0.215 495 5 46 B 0.043 0.063 1,09 1,60 Cc 0.016 0.024 0,41 0,61 D 0.129 0.141 3,28 3,58 E 0.0015 0.0045 0,04 0,11 F 0.054 0.066 1,37 1,68 G 0.024 0.036 0,61 0,91 H 0.279 0.321 7,09 8,15 J 0.030 REF. 0,76 REF. K 0.150 REF. 0,38 REF. INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX A 0.095 0.105 2,41 2,68 B _ 0.050 _ 1,27 Cc 0.016 0.024 0,41 0,61 D 0.036 0.044 0,91 1,12 E 0.002 0.006 0,05 0,15 F 0 190 0.260 4,83 6,60 M/A-COM, Inc. North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020General Purpose Low Noise Bipolar Transistors V3.00 Case Styles (Cont'd) INCHES MILLIMETERS . DIM. MIN. MAX. MIN. MAX Micro-X A 0.092 0.108 2,34 2,74 Case Style 1139 B 0.079 0.087 2,01 2,21 Cc _ 0.070 _ 1,78 F D 0.019 0.025 0.48 0,64 E 4 PLCS. E 0.018 0.022 0,46 0,56 Ms F 0.150 _ 3,81 _ - K G 0.003 0.006 0,08 0,15 COLLECTOR H 45 45 B EMITTER A L J oY D a Specifications Subject to Change Without Notice. M/A-COM, Inc. 15 North America: Tel. (800) 366-2266 m Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020