MJE243G - ON Semiconductor - Datasheet.Directory

April, 2009 − Rev. 13

1Publication Order Number:

MJE243/D

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

•High Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min)

•High DC Current Gain @ IC = 200 mAdc

hFE = 40−200

= 40−120

•Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

•High Current Gain Bandwidth Product −

fT= 40 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakages

ICBO = 100 nAdc (Max) @ Rated VCB

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Emitter−Base Voltage VEB 7.0 Vdc

Collector Current − Continuous

− Peak

IC4.0

8.0

Adc

Base Current IB10 Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD15

120

mW/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

PD1.5

mW/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to +150 _C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 8.34 _C/W

Thermal Resistance,

Junction−to−Ambient

qJA 83.4 _C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJE243 TO−225 500 Units/Box

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

http://onsemi.com

MJE243G TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JE2x3G

Y = Year

WW = Work Week

JE2x3 = Device Code

x = 4 or 5

G=Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

MJE253 TO−225 500 Units/Box

MJE253G TO−225

(Pb−Free)

500 Units/Box

MJE243 − NPN, MJE253 − PNP

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

VCEO(sus) 100 −V

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCE = 100 Vdc, IE = 0, TC = 125_C)

ICBO

−

0.1

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO −0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

180

−

Collector−Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.3

0.6

Base−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat) −1.8 V

Base−Emitter On Voltage

(IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on) −1.5 V

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT40 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob −50 pF

MJE243 − NPN, MJE253 − PNP

http://onsemi.com

Figure 1. Power Derating

T, TEMPERATURE (°C)

040 60 100 120 160

PD, POWER DISSIPATION (WATTS)

1.6

1.2

8.0 0.8

4.0 0.4

80 140

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

+11 V

25 ms

-9.0 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

t, TIME (ns)

500

300

200

100

0.01 0.03 0.05 0.50.20.1 0.3 10

Figure 3. Turn−On Time

5213

NPN MJE243

PNP MJE253

0.02

t, TIME (ms)

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL RESISTANCE

qJC(t) = r(t) qJC

qJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

(NORMALIZED)

Figure 4. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

MJE243 − NPN, MJE253 − PNP

http://onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

0.01

0.05

Figure 5. Active Region Safe Operating Area

500ms

5.0

20107.05.03.02.01.0

100ms

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

0.2

0.5

1.0

2.0

0.02

1.0ms

1007050

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED @

TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

MJE243/MJE253

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

Figure 6. Turn−Off Time

t, TIME (ns)

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 105213

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

10 100

100

200

Figure 7. Capacitance

5020107.05.03.01.0

C, CAPACITANCE (pF)

2.0

TJ = 25°C

Cib

Cob

MJE243 (NPN)

MJE253 (PNP)

NPN MJE243

PNP MJE253

7030

MJE243 − NPN, MJE253 − PNP

http://onsemi.com

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain

Figure 9. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

200

500

0.06 0.1 0.4 4.00.04

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

5.0 1.0 2.00.6

25°C

TJ = 150°C

-55°C

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

0.4

TJ = 25°C

V, VOLTAGE (VOLTS)

NPN

MJE243

PNP

MJE253

100

200

2.0

hFE, DC CURRENT GAIN

25°C

TJ = 150°C

-55°C

VCE = 1.0 V

VCE = 2.0 V

V, VOLTAGE (VOLTS)

VCE(sat)

VBE @ VCE = 1.0 V

qVB FOR VBE

TJ = 25°C

VBE(sat) @ IC/IB = 10

IC/IB = 10

VBE @ VCE = 1.0 V

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.5

+2.0

+1.5

+1.0

-0.5

-1.0

-1.5

-2.0

+0.5

-2.5

*APPLIES FOR IC/IB ≤ hFE/3

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

VCE = 1.0 V

VCE = 2.0 V

7.0

300

0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

1.0

0.6

0.2

1.4

1.2

0.8

0.4

1.0

0.6

0.2

3.0

5.0

7.0

5.0

IC/IB = 10

VCE(sat)

5.0

VBE(sat) @ IC/IB = 10

*qVC FOR VCE(sat)

qVB FOR VBE

*qVC FOR VCE(sat)

MJE243 − NPN, MJE253 − PNP

http://onsemi.com

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077-01 THRU -08 OBSOLETE, NEW STANDARD

077-09.

−B−

−A−M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 --- 1.02 ---

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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MJE243/D

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