1N4148WS SMALL SIGNAL
FAST SWITCHING DIODE
PRV : 100 Volts
IO : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* Marking Code : " W2"
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter Symbol Unit
Reverse Voltage VRV
Peak Reverse Voltage VRM V
Average Rectified Current Half Wave
Rectification with Resistive Load at f 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C IFSM mA
Power Dissipation at Tamb = 25 °C Ptot mW
Thermal Resistance Junction to Ambient Air RthJA °C/W
Junction Temperature Tj °C
Storage Temperature Range TSTG °C
ELECTRICAL CHARACTERISTICS (Rating at Ta = 25 °C unless otherwise specified)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward Voltage IF = 10 mA VF- - 1.0 V
Leakage Current VR = 20 V IR- - 25 nA
VR = 75 V IR- - 5.0 µA
VR = 20 V, Tj =150 °C IR- - 50 µA
Capacitance VF = VR = 0 V Ctot --4pF
Voltage Rise when Switching On tp = 0.1µs, Rise Time < 30ns,
(tested with 50 mA pulses) fp = 5 to 100 kHz
Reverse Recovery Time IF = 10 mA, IR = 1 mA,
VR = 6 V, RL = 100
Rectification Efficiency f = 100 MHz, VRF = 2 V ηv0.45 - - -
Note : (1) Valid provided that electrodes are kept at ambient temperature.
Page 1 of 3 Rev. 06 : May 22, 2006
IF(AV) mA
350
200 1)
150
-65 to + 150
650 1)
75
Value
100
150 1)
V
Trr - - 4 ns
Vfr - - 2.5
1.10
0.80
0.40
0.25
1.35
1.15
2.80
2.30
1.80
1.60
0.15 (max)
Dimensions in millimeters
SOD-323
Certificate TH97/10561QM Certificate TW00/17276EM
Forward charecteristics Dynamic forward resistance
versus forward current
Admissible power dissipation Relative capacitanc
e
versus ambient tempertur
e
versus reverse voltag
e
For conditions, see footnote in table
"Absolute Maximum Ratings"
Page 2 of 3 Rev. 06 : May 22, 2006
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
10-2
10-1
1
10
102
103
0 1 2 V
Tj = 100 °C
Tj = 25 °C
mA
VF
iF
104
103
102
10
1
2
5
2
5
2
5
2
5
10-2 10-1 110 102mA
V
Tj = 25 °C
f = 1 kHz
rF
IF
1000
900
800
700
600
500
400
300
200
100
0
0 100 200 °C
1N4148
1N4148W
Tamb
Ptot
mW
1.1
1.0
0.9
0.8
0.7
0 2 4 6 8 10 V
VR
Ctot (VR)
Ctot (0 V) Tj = 25 °C
f = 1 kHz
Certificate TH97/10561QM Certificate TW00/17276EM
Leakage Curren
t
versus junction temperature
Admissible repetitive peak forward current versus pulse duration
For conditions, see footnote in table " Absolute Maximum Ratings "
Page 3 of 3 Rev. 06 : May 22, 2006
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
104
2
5
nA
103
2
5
102
2
5
10
2
5
1
0 100 200 °C
Tj
100
10
1
0.1
10-5 10-4 10-3 10-2 10-1 1 10 s
2
3
4
5
2
3
4
5
2
3
4
5
25 25 25 25 25 25
tp
IR
IFRM
A
n = 0
0.1
0.2
0.5
T
IFRM
t
p
t
I
ν= tp/T T= 1/fp
VR = 20 V
Certificate TH97/10561QM Certificate TW00/17276EM