S1G-E3/5AT - Vishay [General Semiconductor]

S1A thru S1M

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Revision: 26-Mar-12 1Document Number: 88711

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Surface Mount Glass Passivated Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer,

automotive, and telecommunication.

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 50 V to 1000 V

IFSM 40 A, 30 A

EAS 5 mJ

IR1.0 μA, 5.0 μA

VF1.1 V

TJ max. 150 °C

DO-214AC (SMA)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT

Device marking code SA SB SD SG SJ SK SM

Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V

Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 40 30 A

Non-repetitive peak reverse avalanche energy

at 25 °C, IAS = 1 A, L = 10 mH EAS 5mJ

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

S1A thru S1M

www.vishay.com Vishay General Semiconductor

Revision: 26-Mar-12 2Document Number: 88711

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT

Maximum instantaneous

forward voltage 1.0 A VF 1.1 V

Maximum DC reverse current

at rated DC blocking voltage

TA = 25 °C IR 1.0 5.0 μA

TA = 125 °C 50

Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 1.8 μs

Typical junction capacitance 4.0 V, 1 MHz CJ 12 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT

Typical thermal resistance (1) RJA 75 85 °C/W

RJL 27 30

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

S1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel

S1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel

S1JHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel

S1JHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel

Resistive or Inductive Load

1.2

60 80 16020 40

Lead Temperature (°C)

Average Forward Current (A)

120 140100

1.0

0.8

0.6

0.4

0.2

0.2" x 0.2" (5.0 mm x 5.0 mm)

Thick Copper Pad Areas

S1A thru S1J

S1K, S1M

100

1 10010

= 110 °C

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

S1A thru S1J

S1K, S1M

S1A thru S1M

www.vishay.com Vishay General Semiconductor

Revision: 26-Mar-12 3Document Number: 88711

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.4

100

1.6 2.00.8 1.2

Instantaneous Forward Voltage (V

)

Instantaneous Forward Current (A)

0.1

0.01

020 6040 10080

0.01

0.001

0.1

= 125 °C

= 25 °C

= 75 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 0.01 1 10 100

100

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

0.1 0.01 1 10 100

100

1000

Units Mounted on

0.20" x 0.20" (5.0 mm x 5.0 mm)

x 0.5 Mil. Inches (0.013 mm)

Thick Copper Land Areas

S1A thru S1J

S1K, S1M

0.008 (0.203)

0.194 (4.93)

0.208 (5.28)

0.157 (3.99)

0.177 (4.50)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.006 (0.152)

0.012 (0.305)

0.049 (1.25)

0.065 (1.65)

Cathode Band

0 (0)

DO-214AC (SMA)

Mounting Pad Layout

0.074 (1.88)

MAX.

0.208 (5.28)

REF.

0.066 (1.68)

MIN.

0.060 (1.52)

MIN.

0.030 (0.76)

0.060 (1.52)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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