fA MOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage - Vesorsuy= 40V(Min)- TIP29, TIP30 60V(Min)- TIP29A,TIP30A 80V(Min)- TIP29B,TIP30B 190V(Min)-TIP29C, TIP30C * Coilector-Eritter Saturation Voltage- Voe{sat)=0-7V(Max)@I,= 1.0A * Current Gain-Bandwidth Product f,=3.0 MHz (Min)@ |,=200 mA MAXIMUM RATINGS NPN PNP TIP29 TIP30 TIP2SA = =TIP30A TIP298 TIP30B TiP29C _TIP30C 1.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40-100 VOLTS 30 WATTS fv TO-220 Characteristic Symbol) TIP29 | TIP29A | TIP29B | TIP29C | Unit TIP30O | TIP30A | TIP30B | TIP30C Collector-Emitter Voitage Voeo 40 60 80 100 V Collector-Base Voltage Vopo 40 60 80 100 Vv Emitter-Base Voltage Veso 5.0 V Collector Current - Continuous le 1.0 A ~ Peak 3.0 Base Current ls 0.4 A Total Power Dissipation@T, = 25C Pp 30 w Derate above 25C 0.24 wrc Operating and Storage Junction Ty. Ts1 c Temperature Range -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case} Reje 4.167 Cw FIGURE -1 POWER DERATING 30 *e E 25 S < = 20 Ww 3 N\ 15 aN 3 N g 10 PS 3s . & 4 0 25 50 7 100 125 150 Te , TEMPERATURE(C) B nH yr I : He re Hit LL " 4 F _ # " ty o 9 PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 14.68 | 15.31 B 9.78 | 10.42 Cc 5.01 6.52 D 13.06 | 1462 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 | 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90TIP29, TIP29A, TIP295, TIP29C NPN / TIPSO, TIPSOA, THPSOB, HPSOC PNP ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Characteristic Symbol Min Max Qa. J = OFF CHARACTERISTICS Collector-Emitter Sustaining Voliage(1) TIP29, TIP30 Veeo(sus) 49 Vv (1,= 30 mA, i,= 0) TIP29A,TIP30A 60 TIP29B, TIP30B 80 TIP29C,TIP3OC 100 Collector Cutoff Current lceo mA (Veg 30 V, I,= 0) TIP29, TIP30, TIP29A, TIPSOA 6.3 (Vog 60 V, I,= 0)